Thyristor / Diode Module MT/D3-650-12-A2 (650A 1200V)
|Average forward current, ITAV/IFAV||650A|
|Voltage, VRRM/VDRM||1000 – 1200V|
|Voltage code, VRRM / 100||10 – 12|
Thyristor Diode Module MT/D3-650-12-A2 AS ENERGITM in an international standard package, 650A 1200V.
Used to convert DC and AC currents up to 650 ampere, with a frequency of up to 500 Hz on circuits with voltages up to 1200 volt (12 class).
Thyristor Diode Module MT/D3-650-12-A2 are in a standard package A2: base dimensions 60x124 mm, housing height – 52 mm, weight – 1.5 kg. Two-position module is a monolithic construction of two semiconductors thyristor and diode: type thyristor-diode.
The range of module ratings: MT/D3-650-10-A2, MT/D3-650-12-A2.
High thermal cyclic resistance and reliable operation of low-frequency thyristor-diode modules MT/D3-650-12-A2 when switching high currents is achieved due to their design features and stable parameters of galvanic isolation.
The MT/D3-650-12-A2 thyristor-diode module have a clamp-on design that provides easy mounting and good contact with the cooler for heat dissipation. Several modules can be mounted on one cooler without additional insulation, which significantly reduces the overall dimensions of the assembly. Between the module and the heat sink (heat sink) it is recommended to use a thermally conductive substrate lubricated with thermal paste.
Our modules are offered in several dual and single device topologies for almost all phase control or rectifier applications.
Our company provides a quality guarantee for thyristor / diode modules of 2 years from the date of purchase. When supplying thyristor / diode modules, if necessary, we provide technical passport and certificate of conformity.
The final price for thyristor / diode modules depends on the class, quantity, delivery terms, manufacturer, country of origin and form of payment.
General specifications of thyristor-diode module MT/D3-650-12-A2:
|Thyristor Diode Module specifications||MT/D3-650-12-A2|
|Maximum allowable average forward current (Case temperature)||IT(AV) (TC)||650 А (85ºC)|
|Repetitive pulsed reverse voltage; Repetitive pulsed closed state voltage||VRRM/VDRM||1000-1200 V|
|Surge on-state current||ITSM||14.0 kA|
|Peak on-state voltage||VTM||1.40 V|
|Peak on-state current||ITM||1978 A|
|Threshold voltage||VT(TO)||0.85 V|
|On-state slope resistance||rT||0.280 mΩ|
|Turn-off time||tq||160 µs|
|Junction temperature||Tj max||140 ºC|
|Thermal resistance, junction to case||Rth(j-c)||0.0650 ºC/W|
|Design (switches)||-||dual component|
|Type (circuit diagram)||-||thyristor-diode|
|Dimensions, mm||L×B×H||124x60x52 mm|
Part numbering guide for thyristor–diode modules MT/D3-650-12-A2:
|MT/D||–||Series of thyristor-diode module, AS ENERGITM|
|650||–||Rated current IT(AV), A.|
|12||–||Voltage class VRRM / 100 (Nominal voltage – 1200 V).|
|A2||–||Parameter of the critical rate of rise of off-state voltage (dVD/dt)cr:
|T2||–||Parameter of turn-off time tq:
|N||–||Ambient conditions: N – Normal.|
All part numbers of MT/D3-650 modules:
|Series||ITAV, A||VRRM, V|
|MT/D3-650-10-A2||650 A||1000 V|
|MT/D3-650-12-A2||650 A||1200 V|
Dimensions of power thyristor-diode modules MT/D3-650-12-A2:
Why choose AS ENERGITM
- Own production facilities, including semiconductor silicon chips production
- European brand - 100% quality, favorable price, short production terms
- Over 20 years of experience in the semiconductor industry
- Clients from more than 50 countries trust us
- 20000 items in the product line for currents from 10A to 15000A, voltages from 100V to 9000V
- We produce analogues of other manufacturers' products
- Guaranteed certified quality, warranty period of operation - 2 years
Our products are certified and correspond to international standards.
Our company provides a quality guarantee for products of 2 years.
We provide certificates of conformity, reliability reports, data sheets and technical passports at the request of the customer.
Each product is tested for the main parameters, and Test reports of the parameters for each product are provided.
Geography of partnership
AS ENERGITM company manufactures and supplies power semiconductors to more than 50 countries around the world.
Logistics and Delivery
We deliver our products all over the world with the services of logistics companies: DHL, TNT, UPS, EMS, Fedex, Aramex.
Products can be delivered by any means of transport: air, sea, rail and road.
AS ENERGITM Semiconductors Manufacturing
Our products range includes rectifier diodes, phase control thyristors in disc and stud design, avalanche diodes and thyristors, fast switching, high frequency thyristors, fast recovery, welding and rotor diodes, triacs, bridge rectifiers, power modules (thyristor, diode, thyristor-diode, IGBT), and air and water heatsinks to them.
Power diodes and thyristors are produced for currents from 10A to 15000A, voltage range from 100V to 9000V.
Power diode and thyristor modules are produced from 25A and up to 1250A, voltage range 400V - 4400V.
The range of power semiconductors also includes equivalent, replacement, analogue and alternative semiconductor devices of global manufacturers.