Thyristor / Diode Module MD/T3-650-12-A2 (650A 1200V)
|Average forward current, ITAV/IFAV||650A|
|Voltage, VRRM/VDRM||1000 – 1200V|
|Voltage code, VRRM / 100||10 – 12|
Thyristor Diode Module MD/T3-650-12-A2 AS ENERGITM in an international standard package, 650A 1200V.
Used to convert DC and AC currents up to 650 ampere, with a frequency of up to 500 Hz on circuits with voltages up to 1200 volt (12 class).
Thyristor Diode Module MD/T3-650-12-A2 are in a standard package A2: base dimensions 60x124 mm, housing height – 52 mm, weight – 1.5 kg. Two-position module is a monolithic construction of two semiconductors thyristor and diode: type thyristor-diode.
The range of module ratings: MD/T3-650-10-A2, MD/T3-650-12-A2.
High thermal cyclic resistance and reliable operation of low-frequency thyristor-diode modules MD/T3-650-12-A2 when switching high currents is achieved due to their design features and stable parameters of galvanic isolation.
The MD/T3-650-12-A2 thyristor-diode module have a clamp-on design that provides easy mounting and good contact with the cooler for heat dissipation. Several modules can be mounted on one cooler without additional insulation, which significantly reduces the overall dimensions of the assembly. Between the module and the heat sink (heat sink) it is recommended to use a thermally conductive substrate lubricated with thermal paste.
Our modules are offered in several dual and single device topologies for almost all phase control or rectifier applications.
Our company provides a quality guarantee for thyristor / diode modules of 2 years from the date of purchase. When supplying thyristor / diode modules, if necessary, we provide technical passport and certificate of conformity.
The final price for thyristor / diode modules depends on the class, quantity, delivery terms, manufacturer, country of origin and form of payment.
General specifications of thyristor-diode module MD/T3-650-12-A2:
|Thyristor Diode Module specifications||MD/T3-650-12-A2|
|Maximum allowable average forward current (Case temperature)||IT(AV) (TC)||650 А (85ºC)|
|Repetitive pulsed reverse voltage; Repetitive pulsed closed state voltage||VRRM/VDRM||1000-1200 V|
|Surge on-state current||ITSM||14.0 kA|
|Peak on-state voltage||VTM||1.40 V|
|Peak on-state current||ITM||1978 A|
|Threshold voltage||VT(TO)||0.85 V|
|On-state slope resistance||rT||0.280 mΩ|
|Turn-off time||tq||160 µs|
|Junction temperature||Tj max||140 ºC|
|Thermal resistance, junction to case||Rth(j-c)||0.0650 ºC/W|
|Design (switches)||-||dual component|
|Type (circuit diagram)||-||thyristor-diode|
|Dimensions, mm||L×B×H||124x60x52 mm|
Part numbering guide for thyristor–diode modules MD/T3-650-12-A2:
|MD/T||–||Series of thyristor-diode module, AS ENERGITM|
|650||–||Rated current IT(AV), A.|
|12||–||Voltage class VRRM / 100 (Nominal voltage – 1200 V).|
|A2||–||Parameter of the critical rate of rise of off-state voltage (dVD/dt)cr:
|T2||–||Parameter of turn-off time tq:
|N||–||Ambient conditions: N – Normal.|
All part numbers of MD/T3-650 modules:
|Series||ITAV, A||VRRM, V|
|MD/T3-650-10-A2||650 A||1000 V|
|MD/T3-650-12-A2||650 A||1200 V|
Dimensions of power thyristor-diode modules MD/T3-650-12-A2:
High Power Semiconductors AS ENERGITM
Our company is engaged in the manufacturer and sale of wide range of power semiconductors (power thyristors, modules, rectifier diodes, avalanche, rotor and welding diodes, triacs etc.) currents up to 15000A and voltages to 9000V, and air and water heatsinks to them.
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