Thyristor / Diode Module MT/D4-650-12-A2 (650A 1200V)

Average forward current, ITAV/IFAV 650A
Voltage, VRRM/VDRM 1000 – 1200V
Voltage code, VRRM / 100 10 – 12
MT/D4-650-12-A2 on request
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Weight 1.5 kg
Package
Dimensions
A2
124x60x52 mm
Datasheet Datasheet

Thyristor Diode Module MT/D4-650-12-A2 AS ENERGITM in an international standard package, 650A 1200V.

Used to convert DC and AC currents up to 650 ampere, with a frequency of up to 500 Hz on circuits with voltages up to 1200 volt (12 class).

Thyristor Diode Module MT/D4-650-12-A2 are in a standard package A2: base dimensions 60x124 mm, housing height – 52 mm, weight – 1.5 kg. Two-position module is a monolithic construction of two semiconductors thyristor and diode: type thyristor-diode.

The range of module ratings: MT/D4-650-10-A2, MT/D4-650-12-A2.

High thermal cyclic resistance and reliable operation of low-frequency thyristor-diode modules MT/D4-650-12-A2 when switching high currents is achieved due to their design features and stable parameters of galvanic isolation.

The MT/D4-650-12-A2 thyristor-diode module have a clamp-on design that provides easy mounting and good contact with the cooler for heat dissipation. Several modules can be mounted on one cooler without additional insulation, which significantly reduces the overall dimensions of the assembly. Between the module and the heat sink (heat sink) it is recommended to use a thermally conductive substrate lubricated with thermal paste.

Our modules are offered in several dual and single device topologies for almost all phase control or rectifier applications.

Our company provides a quality guarantee for thyristor / diode modules of 2 years from the date of purchase. When supplying thyristor / diode modules, if necessary, we provide technical passport and certificate of conformity.

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The final price for thyristor / diode modules depends on the class, quantity, delivery terms, manufacturer, country of origin and form of payment.

General specifications of thyristor-diode module MT/D4-650-12-A2:

Thyristor Diode Module specifications MT/D4-650-12-A2
Maximum allowable average forward current (Case temperature) IT(AV) (TC) 650 А (85ºC)
Repetitive pulsed reverse voltage; Repetitive pulsed closed state voltage VRRM/VDRM 1000-1200 V
Surge on-state current ITSM 14.0 kA
Peak on-state voltage VTM 1.40 V
Peak on-state current ITM 1978 A
Threshold voltage VT(TO) 0.85 V
On-state slope resistance rT 0.280 mΩ
Turn-off time tq 160 µs
Junction temperature Tj max 140 ºC
Thermal resistance, junction to case Rth(j-c) 0.0650 ºC/W
Design (switches) - dual component
Type (circuit diagram) - thyristor-diode
Weight W 1.5 kg
Package - A2
Dimensions, mm L×B×H 124x60x52 mm
Datasheet PDF PDF

Part numbering guide for thyristor–diode modules MT/D4-650-12-A2:

MT/D 4 650 12 A2 T2 A2 N
MT/D Series of thyristor-diode module, brand AS ENERGITM
4 Connection diagram.
650 Rated current IT(AV), A.
12 Voltage class VRRM / 100   (Nominal voltage – 1200 V).
A2 Parameter of the critical rate of rise of off-state voltage (dVD/dt)cr:
Alpha-numeric coding P2 K2 Е2 A2 T1 P1 M1
Digital coding 4 5 6 7 8 9
(dVD/dt)cr, V/µs 200 320 500 1000 1600 2000 2500
T2 Parameter of turn-off time tq:
Alpha-numeric coding 0 B2 C2 E2 H2 K2 М2 P2 T2 X2 A3
Digital coding 0 1 2 3 4
tq, µs not standardized 800 630 500 400 320 250 200 160 125 100
A2 Housing type.
N Ambient conditions: N – Normal.

All part numbers of MT/D4-650 modules:

Series ITAV, A VRRM, V
MT/D4-650-10-A2 650 A 1000 V
MT/D4-650-12-A2 650 A 1200 V

Dimensions of power thyristor-diode modules MT/D4-650-12-A2:

Dimensions of thyristor-diode module MT/D4-650-12-A2

Package A2



icon Why choose AS ENERGITM

  • Own production facilities, including semiconductor silicon chips production
  • European brand - 100% quality, favorable price, short production terms
  • Over 20 years of experience in the semiconductor industry
  • Clients from more than 50 countries trust us
  • 20000 items in the product line for currents from 10A to 15000A, voltages from 100V to 9000V
  • We produce analogues of other manufacturers' products
  • Guaranteed certified quality, warranty period of operation - 2 years

 

Quality Warranty

Our products are certified and correspond to international standards.
Our company provides a quality guarantee for products of 2 years.
We provide certificates of conformity, reliability reports, data sheets and technical passports at the request of the customer.

Certificates

Each product is tested for the main parameters, and Test reports of the parameters for each product are provided.

Test Report

Geography of partnership

AS ENERGITM company manufactures and supplies power semiconductors to more than 50 countries around the world.

Geography

Logistics and Delivery

We deliver our products all over the world with the services of logistics companies: DHL, TNT, UPS, EMS, Fedex, Aramex.
Products can be delivered by any means of transport: air, sea, rail and road.

Logistics

AS ENERGITM Semiconductors Manufacturing

Our products range includes rectifier diodes, phase control thyristors in disc and stud design, avalanche diodes and thyristors, fast switching, high frequency thyristors, fast recovery, welding and rotor diodes, triacs, bridge rectifiers, power modules (thyristor, diode, thyristor-diode, IGBT), and air and water heatsinks to them.

Power diodes and thyristors are produced for currents from 10A to 15000A, voltage range from 100V to 9000V.
Power diode and thyristor modules are produced from 25A and up to 1250A, voltage range 400V - 4400V.
The range of power semiconductors also includes equivalent, replacement, analogue and alternative semiconductor devices of global manufacturers.


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