Fast Thyristors Vishay Replacement

Fast thyristors, also known as Inverter Grade Thyristors, in disc design is a press pack type fast switching semiconductor device. Fast thyristors meet requirements, such as increased di/dt resistance, low switching losses, short turn-on and turn-off time. Regulating and converting DC and AC currents up to 940A in circuits with voltages to 1200V (depends on the thyristor type).

Thyristors ASTD AS ENERGITM are a replacement, analog, alternative for presspacks electrical triggered fast discrete thyristors Vishay Semiconductors.

"Air-cooled heatsinks O series for disc devices", "Air heatsink SF series", "Water heatsink SS series" for thyristor cooling are also available to order.

Part numbering guide for fast thyristors

youtubeVideo: Reviews of high power disc thyristors

icon AS ENERGITM Semiconductors Manufacturing Reference

Features: designed for high power industrial and power transmission applications; optimized for low on-state voltage drop; matched Qrr and VT values available for series and / or parallel connections.

Fast discrete thyristors are devices with reduced tq, trr, Qrr values and with a higher value (diT/dt)crit (up to 2500 A/µs) designed to operate at higher frequencies modes. Inverter grade thyristors are characterized with a very low turn-off time that sets them apart from the standard models. They are used in inverters, choppers, induction heating and melting, electric transportation, AC drives, UPS, and other systems requiring short turn-on and turn-off times. The thyristors have an industry-standard ceramic sealed housing isolating the functional part and the semiconductor element from mechanical impacts and environment.

The thyristor has an industry standard ceramic housing making it easy to integrate the device into existing equipment. This thyristor has a disc housing with pressure contacts. The polarity of the thyristor is determined by the icon on the case. The technical specifications, part numbering guide, datashets for thyristors are listed below.

Thyristors AS ENERGITM have the following features: low static and dynamic losses, high values of VDRM/VRRM, extensive experience of using the devices in various industries, range of voltages from 100 to 9000 V and amperages from 100 to 15000 A, high resistance to thermal and electric cycling, natural or forced air cooling.

Our company provides a quality guarantee for thyristors of 2 years from the date of purchase. When supplying thyristors, if necessary, we provide technical passport and certificate of conformity.

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The final price of fast discrete thyristors depends on the voltage class, quantity, delivery terms, manufacturer, country of origin and form of payment.

General specifications of Vishay Fast Discrete Thyristors and Replacements

I2t VT(TO) rT Tvj max Rth(j-c)
W Package,
A (ºC) V A kA2·s V mΩ ºC ºC/W g mm PDF
VS-ST173C10CFK0 330 (55) 1000 4680 110 1.61 0.77 125 0.016 50 A-PUK
VS-ST173C10CFK1 1000 ASTD173C10CFK1
VS-ST173C10CFP0 1000 ASTD173C10CFP0
VS-ST173C10CFP1 1000 ASTD173C10CFP1
VS-ST173C12CFK0 1200 ASTD173C12CFK0
VS-ST173C12CFK0L 1200 ASTD173C12CFK0L
VS-ST173C12CFK1 1200 ASTD173C12CFK1
VS-ST173C12CFP0 1200 ASTD173C12CFP0
VS-ST173C12CFP1 1200 ASTD173C12CFP1
VS-ST183C04CFL0 370 (55) 400 4900 120 1.45 0.58 125 0.016 50 A-PUK
VS-ST183C04CFN0 400 ASTD183C04CFN0
VS-ST183C04CFN1 400 ASTD183C04CFN1
VS-ST183C08CFL0 800 ASTD183C08CFL0
VS-ST183C08CFL1 800 ASTD183C08CFL1
VS-ST183C08CFN0 800 ASTD183C08CFN0
VS-ST183C08CFN1 800 ASTD183C08CFN1
VS-ST203C10CFJ1 370 (55) 1000 5260 138 1.22 0.83 125 0.017 50 A-PUK
VS-ST203C12CFJ0 1200 ASTD203C12CFJ0
VS-ST203C12CFJ1 1200 ASTD203C12CFJ1
VS-ST223C04CFL0 390 (55) 400 5850 171 1.09 0.82 125 0.017 50 A-PUK
VS-ST223C04CFL1 400 ASTD223C04CFL1
VS-ST223C04CFN0 400 ASTD223C04CFN0
VS-ST223C04CFN1 400 ASTD223C04CFN1
VS-ST223C08CFL0 800 ASTD223C08CFL0
VS-ST223C08CFL1 800 ASTD223C08CFL1
VS-ST223C08CFN0 800 ASTD223C08CFN0
VS-ST223C08CFN1 800 ASTD223C08CFN1
VS-ST303C04LFK0 515 (55) 400 7950 316 1.48 0.56 125 0.010 250 B-PUK
VS-ST303C04LFL0 400 ASTD303C04LFL0
VS-ST303C08LFL1 800 ASTD303C08LFL1
VS-ST303C08LFN0 800 ASTD303C08LFN0
VS-ST303C08LFN1 800 ASTD303C08LFN1
VS-ST303C10LFJ0 1000 ASTD303C10LFJ0
VS-ST303C12LFH0 1200 ASTD303C12LFH0
VS-ST303C12LFJ1 1200 ASTD303C12LFJ1
VS-ST303C12LFK0 1200 ASTD303C12LFK0
VS-ST303C12LFK0L 1200 ASTD303C12LFK0L
VS-ST303C12LFK1 1200 ASTD303C12LFK1
VS-ST303C12LFK1L 1200 ASTD303C12LFK1L
VS-ST303C04CFL0 620 (55) 400 7950 316 1.48 0.56 125 0.010 83 E-PUK
VS-ST303C04CFL1 400 ASTD303C04CFL1
VS-ST303C04CFN1 400 ASTD303C04CFN1
VS-ST303C08CFK1 800 ASTD303C08CFK1
VS-ST303C08CFL1 800 ASTD303C08CFL1
VS-ST303C08CFN1 800 ASTD303C08CFN1
VS-ST303C10CFJ0 1000 ASTD303C10CFJ0
VS-ST303C10CFK0 1000 ASTD303C10CFK0
VS-ST303C12CCL1 1200 ASTD303C12CCL1
VS-ST303C12CFJ0 1200 ASTD303C12CFJ0
VS-ST303C12CFJ1 1200 ASTD303C12CFJ1
VS-ST303C12CFK0 1200 ASTD303C12CFK0
VS-ST303C12CFK0L 1200 ASTD303C12CFK0L
VS-ST303C12CFK1 1200 ASTD303C12CFK1
VS-ST303C12CFK1L 1200 ASTD303C12CFK1L
VS-ST333C04LFL0 620 (55) 400 11000 605 0.93 0.58 125 0.010 250 B-PUK
VS-ST333C04LFL1 400 ASTD333C04LFL1
VS-ST333C04LFM0 400 ASTD333C04LFM0
VS-ST333C04LFM1 400 ASTD333C04LFM1
VS-ST333C08LFL0 800 ASTD333C08LFL0
VS-ST333C08LFL1 800 ASTD333C08LFL1
VS-ST333C08LFM0 800 ASTD333C08LFM0
VS-ST333C08LFM1 800 ASTD333C08LFM1
VS-ST333C04CFL0 720 (55) 400 11000 605 0.93 0.58 125 0.011 83 E-PUK
VS-ST333C04CFL1 400 ASTD333C04CFL1
VS-ST333C04CFM1 400 ASTD333C04CFM1
VS-ST333C08CFL0 800 ASTD333C08CFL0
VS-ST333C08CFL1 800 ASTD333C08CFL1
VS-ST333C08CFM0 800 ASTD333C08CFM0
VS-ST333C08CFM1 800 ASTD333C08CFM1
VS-ST733C04LFL1 940 (55) 400 20000 2000 1.20 0.29 125 0.009 255 B-PUK
VS-ST733C04LFM1 400 ASTD733C04LFM1
VS-ST733C08LFL0 800 ASTD733C08LFL0
VS-ST733C08LFL1 800 ASTD733C08LFL1
VS-ST733C08LFM0 800 ASTD733C08LFM0
VS-ST733C08LFM0L 800 ASTD733C08LFM0L
VS-ST733C08LFM1 800 ASTD733C08LFM1

Part Numbering Guide for Fast Discrete Thyristors:

AS TD 33 3 C 08 L F L 0
TD Product group: Discrete Disk Thyristor.
33 Essential part number.
3 Fast turn-off thyristor.
C Ceramic PUK.
08 Voltage class VRRM / 100.
L Housing (package) type: B-PUK (TO-200AC).
F Parameter of the critical rate of rise of off-state voltage (dVD/dt)crit:
Letter coding C D E F H
Value, V/µs 20 50 100 200 400
L Parameter of turn-off time tq:
Letter coding N M L P K J H
Value, µs 10 12 15 18 20 25 30
0 Fast-on terminals (gate and auxiliary cathode unsoldered leads).

High Power Semiconductors AS ENERGITM

Our company is engaged in the manufacturer and sale of wide range of power semiconductors (power thyristors, modules, rectifier diodes, avalanche, rotor and welding diodes, triacs etc.) currents up to 15000A and voltages to 9000V, and air and water heatsinks to them.
You can buy semiconductor devices in any volumes, and when ordering large lots, the price will be lower. We have earned the trust of customers and supply products all over the world.

For questions regarding the acquisition of Power Thyristors, Diodes, Modules send an email request to:

[email protected]

And we will provide you a commercial offer for delivery.
For a large number, we will provide an individual price!!!

We are open to manufacture products at our production facilities
according to your requests and technical task.

Photo Gallery

The photo gallery shows many different semiconductor devices, semiconductor chips and SCRs produced by AS ENERGITM, examples of test reports.

Photo of High Power Thyristors:

Installation recommendations for power thyristors:

Assembling disc thyristor with a heatsink

The reliability of heat transfer and electrical contact between the mating surfaces of the thyristor and the cooler over the entire temperature range is ensured by appropriate torque (clamping force).

Before assembly you should perform visual inspection (1) contact surfaces for mechanical damages and wipe (2), soaked with alcohol (toluene, gasoline, acetone).

After inspection, fix the current contacts (leads), install a pin to fix the alignment of the structure.

To improve the parameters of heat transfer it is recommended to lubricate (3) a thin layer of silicone thermal conductive paste before the assembly, which is not a mandatory condition for installation.

Install the thyristor (3), the second part of the cooler, the fiberglass insulator and the thrust washer.

To thread the traverse (4) and evenly tighten the nuts. Make sure no misalignment and evenness of the contact surfaces.

When the parts are sufficiently clamped but moveable, we recommend placing the cooler on a flat surface and checking the tolerance for parallelism of the overall adjacent plane of the surfaces (5).

Clamp each nut in turn (about a quarter turn) to the stop (6). The amount of deflection of the traverse determines whether the achieved clamping force corresponds to the required one.

After installation, the fasteners (nuts and washers) must be additionally secured against corrosion.

Tips and recommendations for power thyristors:

The power thyristors should not be operated for long periods of time at their limit load for all parameters. In this case, the safety factor is determined by the required degree of reliability of the device.

Replace a failed power thyristor with a thyristor that matches the parameters of the one being replaced.

Supercooling must be provided when operating in an environment with an elevated ambient temperature.

Periodic cleaning of power thyristors and coolers to remove dust and contaminants is recommended to ensure proper heat dissipation.

Inductive current dividers (often twisted toroidal wire) should be used to equalize currents between power thyristors connected in parallel. The most popular connection methods are closed circuit, common coil circuit, or power thyristor. The efficiency of current dividers in this case is determined by the cross section of the magnetic wire.

Prevention of voltage unbalance when power thyristors are connected in series is achieved by using shunt resistors connected in parallel with each thyristor. Voltage equalization in transient conditions is provided by connecting capacitors in parallel to each thyristor.

It is strictly forbidden to touch power thyristors under high voltage during operation.

icon Why choose AS ENERGITM

  • Own production facilities, including semiconductor silicon chips production
  • European brand - 100% quality, favorable price, short production terms
  • Over 20 years of experience in the semiconductor industry
  • Clients from more than 50 countries trust us
  • 20000 items in the product line for currents from 10A to 15000A, voltages from 100V to 9000V
  • We produce analogues of other manufacturers' products
  • Guaranteed certified quality, warranty period of operation - 2 years


Quality Warranty

Our products are certified and correspond to international standards.
Our company provides a quality guarantee for products of 2 years.
We provide certificates of conformity, reliability reports, data sheets and technical passports at the request of the customer.


Each product is tested for the main parameters, and Test reports of the parameters for each product are provided.

Test Report

Geography of partnership

AS ENERGITM company manufactures and supplies power semiconductors to more than 50 countries around the world.


Logistics and Delivery

We deliver our products all over the world with the services of logistics companies: DHL, TNT, UPS, EMS, Fedex, Aramex.
Products can be delivered by any means of transport: air, sea, rail and road.


AS ENERGITM Semiconductors Manufacturing

Our products range includes rectifier diodes, phase control thyristors in disc and stud design, avalanche diodes and thyristors, fast switching, high frequency thyristors, fast recovery, welding and rotor diodes, triacs, bridge rectifiers, power modules (thyristor, diode, thyristor-diode, IGBT), and air and water heatsinks to them.

Power diodes and thyristors are produced for currents from 10A to 15000A, voltage range from 100V to 9000V.
Power diode and thyristor modules are produced from 25A and up to 1250A, voltage range 400V - 4400V.
The range of power semiconductors also includes equivalent, replacement, analogue and alternative semiconductor devices of global manufacturers.

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