Gate Turn-Off Thyristors ABB Replacement

Gate Turn-Off Thyristors, also known as GTO in disc design are press pack type general-purpose thyristors, regulating and converting DC and AC currents 1300A in circuits with voltages 4500V.

Gate Turn-Off Thyristors AS ENERGI^TM are a replacement, analog, alternative for Gate Turn-Off Thyristors Hitachi Energy.

Part numbering guide for phase control thyristors

icon AS ENERGI^TM Semiconductors Manufacturing Reference

A GTO is a thyristor that can be turned off by applying a current to the gate in the reverse direction to that required to turn it on.

The thyristor has an industry standard ceramic housing making it easy to integrate the device into existing equipment. This thyristor has a disc housing with pressure contacts. The polarity of the thyristor is determined by the icon on the case. The technical specifications, part numbering guide, datasheets PDF, outline drawings for thyristors are listed below.

Thyristors AS ENERGI^TM have the following features: low static and dynamic losses, high values of V_DRM/V_RRM, extensive experience of using the devices in various industries, range of voltages from 2500 to 4500 V and amperages from 210 to 1300 A, high resistance to thermal and electric cycling, natural or forced air cooling.

Our company provides a quality guarantee for thyristors of 2 years from the date of purchase. When supplying thyristors, if necessary, we provide technical passport and certificate of conformity.

The final price for standard recovery diodes in stud design depends on the voltage class, quantity, delivery terms, manufacturer, country of origin and form of payment.

AS ENERGI

Power Semiconductors Manufacturer

SCR's Devices: 10A-20200A, 100V-9000V

Full Production
Cycle

ISO
9001:2015

100% Products
Tested

RoHS/REACH
Compliant

Warranty
2 years

Certificate of
Conformity

The final price of phase control thyristors depends on the voltage class, quantity, delivery terms, manufacturer, country of origin and form of payment.

General specifications of Gate Turn-Off Thyristors Hitachi Energy Replacements

Type	V_DRM	V_DC	I_TGQM (T_C=55°C)	C_s	Case	Dimensions ØDxØdxH	Replacement AS ENERGI^TM	Data sheet
Type	V	V	A	µF	Case	mm	Replacement AS ENERGI^TM	PDF
5SGA 06D4502	2500	1400	1500	3	D	64х34х26	AGA 600-45-D-02
5SGA 15F2502	2500	1400	2000	4	F	75х47х26	AGA 1500-25-F-02
5SGA 20H2501	2500	1400	2500	6	H	93х63х26	AGA 2000-25-H-01
5SGA 20H4502	2500	1400	2800	5	H	93х63х26	AGA 2000-45-H-02
5SGA 25H2501	4500	2800	600	1	H	93х63х26	AGA 2500-25-H-01
5SGA 30J2501	4500	2200	2000	4	J	108х75х26	AGA 3000-25-J-01
5SGA 30J4502	4500	2800	3000	6	J	108х75х26	AGA 3000-45-J-02
5SGA 40L4501	4500	2800	4000	6	L	120х85х26	AGA 4000-45-L-01
Fine pattern GTOs with buffer layer
5SGF 30J4502	4500	3000	3000	3	J	108х75х26	AGF 3000-45-J-02
5SGF 40L4502	4500	2800	4000	6	L	120х85х26	AGF 4000-45-L-02

Part Numbering Guide for Gate Turn-Off Thyristors:

–

4000

A	–	AS ENERGI^TM
GA	–	Product group: Gate Turn-Off Thyristors.
4000	–	Max. controllable turn off current I_TGQM .
45	–	Voltage code V_RRM / 100.
L	–	Housing (package) type.
01	–	Version number.

High Power Semiconductors AS ENERGI^TM

Our company is engaged in the manufacturer and sale of wide range of power semiconductors (power thyristors, modules, rectifier diodes, avalanche, rotor and welding diodes, triacs etc.) currents up to 15000A and voltages to 9000V, and air and water heatsinks to them.
You can buy semiconductor devices in any volumes, and when ordering large lots, the price will be lower. We have earned the trust of customers and supply products all over the world.

For questions regarding the acquisition of Power Thyristors, Diodes, Modules send an email request to:

[email protected]

And we will provide you a commercial offer for delivery.
For a large number, we will provide an individual price!!!

We are open to manufacture products at our production facilities
according to your requests and technical task.

Photo Gallery

The photo gallery shows many different semiconductor devices, semiconductor chips and SCRs produced by AS ENERGI^TM, examples of test reports.

See more Photos

Why choose AS ENERGI^TM

Own production facilities, including semiconductor silicon chips production
European brand - 100% quality, favorable price, short production terms
Over 20 years of experience in the semiconductor industry
Clients from more than 50 countries trust us
20000 items in the product line for currents from 10A to 15000A, voltages from 100V to 9000V
We produce analogues of other manufacturers' products
Guaranteed certified quality, warranty period of operation - 2 years

Quality Warranty

Our products are certified and correspond to international standards.
Our company provides a quality guarantee for products of 2 years.
We provide certificates of conformity, reliability reports, data sheets and technical passports at the request of the customer.

Each product is tested for the main parameters, and Test reports of the parameters for each product are provided.

Geography of partnership

AS ENERGI^TM company manufactures and supplies power semiconductors to more than 50 countries around the world.

Logistics and Delivery

We deliver our products all over the world with the services of logistics companies: DHL, TNT, UPS, EMS, Fedex, Aramex.
Products can be delivered by any means of transport: air, sea, rail and road.

AS ENERGI^TM Semiconductors Manufacturing

Our products range includes rectifier diodes, phase control thyristors in disc and stud design, avalanche diodes and thyristors, fast switching, high frequency thyristors, fast recovery, welding and rotor diodes, triacs, bridge rectifiers, power modules (thyristor, diode, thyristor-diode, IGBT), and air and water heatsinks to them.

Power diodes and thyristors are produced for currents from 10A to 15000A, voltage range from 100V to 9000V.
Power diode and thyristor modules are produced from 25A and up to 1250A, voltage range 400V - 4400V.
The range of power semiconductors also includes equivalent, replacement, analogue and alternative semiconductor devices of global manufacturers.