Single Rectifier Diode Modules Infineon Replacement

Single Rectifier Diode Modules, also known as Standard Recovery Diodes is a press pack type general-purpose diodes.

Features: optimised for line frequency; low on-state losses; high reverse voltage and high current handling capabilities.

Rectifier Diodes AMND and AMDZ AS ENERGITM are a replacement, analog, alternative semiconductor devices for Single Rectifier Diode Modules ND, DZ Series Infineon Technologies, Eupec.

Part numbering guide for rectifier diodes

icon AS ENERGITM Semiconductors Manufacturing Reference

"Air-cooled heatsinks O series for disc devices", "Air heatsink SF series", "Water heatsink SS series" for diode cooling are also available to order.

The diode has an industry standard ceramic housing making it easy to integrate the device into existing equipment. This diode has a disc housing with pressure contacts. The polarity of the diode (anode, cathode) is determined by the icon on the case. The technical specifications, part numbering guide, datashets for diodes are listed below.

Rectifier Diodes AS ENERGITM have the following features: low static and dynamic losses, high values of VRSM/VRRM, extensive experience of using the devices in various industries, range of voltages from 100 to 9000 V and amperages from 100 to 7500 A, high resistance to thermal and electric cycling.

Our company provides a quality guarantee for rectifier diodes of 2 years from the date of purchase. When supplying diodes, if necessary, we provide technical passport and certificate of conformity.

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The final price of standard rectifier diodes depends on the voltage class, quantity, delivery terms, manufacturer, country of origin and form of payment.

General specifications of Single Rectifier Diode Modules Infineon and Replacements

Type IF(AV)M V RRM
V DRM
IFSM I 2t V T0 r T T vj max R th(j-c) W Package, Dimensions L×B×H Replacement
AS ENERGI TM
Data sheet
A V A kA 2·s V mΩ ºC K/W g mm PDF
ND89N16K 89 1600 2400 28.8 0.75 2.3 150 0.45 160 DP20
92x20x30
AMND89N16K
ND89N12K 89 1200 2400 28.8 0.75 2.3 150 0.45 160 DP20
92x20x30
AMND89N12K
ND104N18K 104 1800 2500 31.25 0.7 2.1 150 0.39 160 DP20
92x20x30
AMND104N18K
ND104N16K 104 1600 2500 31.25 0.7 2.1 150 0.39 160 DP20
92x20x30
AMND104N16K
ND104N12K 104 1200 2500 31.25 0.7 2.1 150 0.39 160 DP20
92x20x30
AMND104N12K
ND171N18K 170 1800 5600 157 0.75 0.8 150 0.26 310 DP34
94x34x30
AMND171N18K
ND171N16K 170 1600 5600 157 0.75 0.8 150 0.26 310 DP34
94x34x30
AMND171N16K
ND261N26K 260 2600 8300 344 0.7 0.68 150 0.17 700 DP50ND
92x50x52
AMND261N26K
ND260N16K 260 1600 8300 344 0.7 0.68 150 0.17 700 DP50ND
92x50x52
AMND260N16K
ND260N14K 260 1400 8300 344 0.7 0.68 150 0.17 700 DP50ND
92x50x52
AMND260N14K
DZ435N40K 435 4000 12000 720 0.84 0.6 150 0.078 900 DP50.1
101x50x52
AMDZ435N40K
DZ435N36K 435 3600 12000 720 0.84 0.6 150 0.078 900 DP50.1
101x50x52
AMDZ435N36K
DZ540N26K 540 2600 14000 980 0.78 0.31 150 0.078 900 DP50.1
101x50x52
AMDZ540N26K
DZ540N22K 540 2200 14000 980 0.78 0.31 150 0.078 900 DP50.1
101x50x52
AMDZ540N22K
DZ600N18K 600 1800 19000 1805 0.75 0.22 150 0.078 900 DP50.1
101x50x52
AMDZ600N18K
DZ600N16K 600 1600 19000 1805 0.75 0.22 150 0.078 900 DP50.1
101x50x52
AMDZ600N16K
DZ600N12K 600 1200 19000 1805 0.75 0.22 150 0.078 900 DP50.1
101x50x52
AMDZ600N12K
DZ950N44K 950 4400 29000 4205 0.85 0.28 150 0.042 2750 DP70
104x70x90
AMDZ950N44K
DZ950N36K 950 3600 29000 4205 0.85 0.28 150 0.042 2750 DP70
104x70x90
AMDZ950N36K
DZ1070N28K 1070 2800 35000 6125 0.8 0.17 160 0.045 2750 DP70
104x70x90
AMDZ1070N28K
DZ1070N26K 1070 2600 35000 6125 0.8 0.17 160 0.045 2750 DP70
104x70x90
AMDZ1070N26K
DZ1100N22K TIM 1100 2200 40000 8000 0.75 0.073 150 0.048 1950 DP70A
104x70x90
AMDZ1100N22K-TIM
DZ1100N22K 1100 2200 40000 8000 0.75 0.073 150 0.048 1950 DP70A
104x70x90
AMDZ1100N22K
DZ1070N22K 1100 2200 35000 6125 0.75 0.073 150 0.045 1950 DP70A
104x70x90
AMDZ1070N22K
DZ1070N18K 1100 1800 35000 6125 0.75 0.073 150 0.045 1950 DP70A
104x70x90
AMDZ1070N18K

Part Numbering Guide for Single Rectifier Diode Modules:

A M DZ 1070 N 26 K
A brand AS ENERGITM
M Product group: Module.
DZ Configuration: Single Diode.
1070 Average on-state current IF(AV), Amp.
N Phase control device.
26 Voltage class VRRM / 100.
K Mechanical construction: pressure contact technology

High Power Semiconductors AS ENERGITM

Our company is engaged in the manufacturer and sale of wide range of power semiconductors (power thyristors, modules, rectifier diodes, avalanche, rotor and welding diodes, triacs etc.) currents up to 15000A and voltages to 9000V, and air and water heatsinks to them.
You can buy semiconductor devices in any volumes, and when ordering large lots, the price will be lower. We have earned the trust of customers and supply products all over the world.

For questions regarding the acquisition of Power Thyristors, Diodes, Modules send an email request to:

[email protected]

And we will provide you a commercial offer for delivery.
For a large number, we will provide an individual price!!!

We are open to manufacture products at our production facilities
according to your requests and technical task.


Photo Gallery

The photo gallery shows many different semiconductor devices, semiconductor chips and SCRs produced by AS ENERGITM, examples of test reports.


Recommendations for mounting power modules

Heatsink and Surface Specifications, Preparation

In order to ensure good thermal contact and to obtain the thermal contact resistance values specified in the datasheets, the contact surface of the heat sink must be clean and free from dust particles. It is useful to clean the mounting surface of the heat sink with wipes and an alcohol cleaner, e.g. isopropanol, right before the mounting process. The following mechanical specifications have to be met:
– Unevenness of heat sink mounting area must be ≤ 50μm per 100 mm
– Roughness Rz: < 10 μm
– No steps > 10 μm


Heat sink surface specification

Applying Thermal Paste

Recommended to use stencil printing in order to apply thermal interface material. Recommended to use thermal paste thickness in the range from 50 μm to 100 μm. Applying thermal paste by means of roller is not recommended for mass production as reproducible of an optimized thermal paste thickness cannot be guaranteed.

Mounting torque on heat sink MS

To secure power modules, the use of steel screws in combination with suitable washers and spring lock washers or combination screws is strongly recommended. The specified in datasheet torque value must be observed.

A pre-tightening torque and retightening to the given torque value is recommended. For the screwing process the speed has to be limited and soft torque limitation is recommended to avoid torque peaks, which may occur with pneumatic screwdrivers.


Example of mounting order

The screws must be tightened in diagonal order with equal torque in several steps until the specified torque value MS has been reached.


Tips and recommendations for power diodes:

The power diodes should not be operated for long periods of time at their limit load for all parameters. In this case, the safety factor is determined by the required degree of reliability of the device.

Replace a failed power diode with a diode that matches the parameters of the one being replaced.

Supercooling must be provided when operating in an environment with an elevated ambient temperature.

Periodic cleaning of power diodes and coolers to remove dust and contaminants is recommended to ensure proper heat dissipation.

Inductive current dividers (often twisted toroidal wire) should be used to equalize currents between power diodes connected in parallel. The most popular connection methods are closed circuit, common coil circuit, or power diode. The efficiency of current dividers in this case is determined by the cross section of the magnetic wire.

Prevention of voltage unbalance when power diodes are connected in series is achieved by using shunt resistors connected in parallel with each diode. Voltage equalization in transient conditions is provided by connecting capacitors in parallel to each diode.

It is strictly forbidden to touch power diodes under high voltage during operation.


icon Why choose AS ENERGITM

  • Own production facilities, including semiconductor silicon chips production
  • European brand - 100% quality, favorable price, short production terms
  • Over 20 years of experience in the semiconductor industry
  • Clients from more than 50 countries trust us
  • 20000 items in the product line for currents from 10A to 15000A, voltages from 100V to 9000V
  • We produce analogues of other manufacturers' products
  • Guaranteed certified quality, warranty period of operation - 2 years

 

Quality Warranty

Our products are certified and correspond to international standards.
Our company provides a quality guarantee for products of 2 years.
We provide certificates of conformity, reliability reports, data sheets and technical passports at the request of the customer.

Certificates

Each product is tested for the main parameters, and Test reports of the parameters for each product are provided.

Test Report

Geography of partnership

AS ENERGITM company manufactures and supplies power semiconductors to more than 50 countries around the world.

Geography

Logistics and Delivery

We deliver our products all over the world with the services of logistics companies: DHL, TNT, UPS, EMS, Fedex, Aramex.
Products can be delivered by any means of transport: air, sea, rail and road.

Logistics

AS ENERGITM Semiconductors Manufacturing

Our products range includes rectifier diodes, phase control thyristors in disc and stud design, avalanche diodes and thyristors, fast switching, high frequency thyristors, fast recovery, welding and rotor diodes, triacs, bridge rectifiers, power modules (thyristor, diode, thyristor-diode, IGBT), and air and water heatsinks to them.

Power diodes and thyristors are produced for currents from 10A to 15000A, voltage range from 100V to 9000V.
Power diode and thyristor modules are produced from 25A and up to 1250A, voltage range 400V - 4400V.
The range of power semiconductors also includes equivalent, replacement, analogue and alternative semiconductor devices of global manufacturers.


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