Fast Recovery, Stud Type, Diodes Vishay Replacement

Fast Recovery, Stud Type, Diodes Vishay Replacement

Fast Recovery Diodes, also known as Fast Diodes or Fast Switching Diodes in stud design are semiconductor devices with a short reverse recovery time.

Part numbering guide for rectifier diodes

youtubeVideo: Reviews of high power stud diodes

icon AS ENERGITM Semiconductors Manufacturing Reference

"Air-cooled heatsinks O series for stud devices", for diode cooling are also available to order.

Fast Recovery Diodes ASDS AS ENERGITM are a replacement, analog, alternative semiconductor devices for Fast Recovery Diodes Stud Type Vishay Semiconductors.

Features: optimised for line frequency; low on-state losses; low reverse recovery time; high switching speed; high reverse voltage and high current handling capabilities.

The fast recovery diodes converting DC and AC currents up to 200A in circuits with voltages up to 2500V. Their main applications are for DC-DC converters and inverters, high-frequency rectifiers, switching power supplies.

The peculiarity of diodes is their fast recovery (short reverse recovery time trr and small recovery charge) and application at high frequencies. Diodes have a high current-carrying capacity at high frequencies.

The diode has an industry standard stud design making it easy to integrate the device into existing equipment. The polarity of the diode (anode, cathode) is determined by the icon on the case. The technical specifications, part numbering guide, datashets for diodes are listed below.

Rectifier Diodes AS ENERGITM have the following features: low static and dynamic losses, high values of VRSM/VRRM, extensive experience of using the devices in various industries, range of voltages from 100 to 9000 V and amperages from 100 to 15000 A, high resistance to thermal and electric cycling.

Our company provides a quality guarantee for rectifier diodes of 2 years from the date of purchase. When supplying diodes, if necessary, we provide technical passport and certificate of conformity.

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The final price of fast recovery diodes stud type depends on the voltage class, quantity, delivery terms, manufacturer, country of origin and form of payment.

General specifications of Fast Recovery Diodes (Stud Type) Vishay and Replacements

VRRM/VDRM IFSM I2t VF(TO) rT Tvj max Rth(j-c)
W Package Replacement
A (ºC) V A kA2·s V mΩ ºC ºC/W g mm PDF
VS-SD203N04S10PV 150 (125) 400 3000 45 0.80 0.97 180 0.023 130 DO-9
VS-SD203N08S10PV 800 ASDS203N08S10PV
VS-SD203N10S10PV 1000 ASDS203N10S10PV
VS-SD203N12S15PV 1200 ASDS203N12S15PV
VS-SD203N14S15PV 1400 ASDS203N14S15PV
VS-SD203N16S15PV 1600 ASDS203N16S15PV
VS-SD203N20S20PC 2000 ASDS203N20S20PC
VS-SD203R20S20PC 2000 ASDS203R20S20PC
VS-SD203N25S20PC 2500 ASDS203N25S20PC
VS-SD203R25S20PC 2500 ASDS203R25S20PC

Part Numbering Guide for Fast Recovery Diodes:

AS DS 20 3 N 04 S10 P C
DS Product group: Diode Stud.
20 Essential part number.
3 Fast recovery.
N N = stud normal polarity (cathode to stud)
R = stud reverse polarity (anode to stud)
04 Voltage code x 100 = VRRM.
S10 trr code .
P P = stud base DO-9 (DO-205AB) 3/4" 16UNF-2A
M = stud base DO-9 (DO-205AB) M16 x 1.5
C C = ceramic housing (over 1600 V)
V = glass-metal seal (only up to 1600 V)

High Power Semiconductors AS ENERGITM

Our company is engaged in the manufacturer and sale of wide range of power semiconductors (power thyristors, modules, rectifier diodes, avalanche, rotor and welding diodes, triacs etc.) currents up to 15000A and voltages to 9000V, and air and water heatsinks to them.
You can buy semiconductor devices in any volumes, and when ordering large lots, the price will be lower. We have earned the trust of customers and supply products all over the world.

For questions regarding the acquisition of Power Thyristors, Diodes, Modules send an email request to:

[email protected]

And we will provide you a commercial offer for delivery.
For a large number, we will provide an individual price!!!

We are open to manufacture products at our production facilities
according to your requests and technical task.

Photo Gallery

The photo gallery shows many different semiconductor devices, semiconductor chips and SCRs produced by AS ENERGITM, examples of test reports.

Installation recommendations for stud type power rectifier diodes:

Assembling stud diode with a heatsink

The reliability of heat transfer and electrical contact between the mating surfaces of the diode and the cooler over the entire temperature range is ensured by appropriate torque.

Before assembly you should perform visual inspection (1) contact surfaces for mechanical damages and wipe (2), soaked with alcohol (toluene, gasoline, acetone).

To improve the parameters of heat transfer it is recommended to lubricate (3) a thin layer of silicone thermal conductive paste before the assembly, which is not a mandatory condition for installation.

After installation, the fasteners (nuts and washers) must be additionally secured against corrosion.

Tips and recommendations for power diodes:

The power diodes should not be operated for long periods of time at their limit load for all parameters. In this case, the safety factor is determined by the required degree of reliability of the device.

Replace a failed power diode with a diode that matches the parameters of the one being replaced.

Supercooling must be provided when operating in an environment with an elevated ambient temperature.

Periodic cleaning of power diodes and coolers to remove dust and contaminants is recommended to ensure proper heat dissipation.

Inductive current dividers (often twisted toroidal wire) should be used to equalize currents between power diodes connected in parallel. The most popular connection methods are closed circuit, common coil circuit, or power diode. The efficiency of current dividers in this case is determined by the cross section of the magnetic wire.

Prevention of voltage unbalance when power diodes are connected in series is achieved by using shunt resistors connected in parallel with each diode. Voltage equalization in transient conditions is provided by connecting capacitors in parallel to each diode.

Device under voltage

It is strictly forbidden to touch power diodes under high voltage during operation.

icon Why choose AS ENERGITM

  • Own production facilities, including semiconductor silicon chips production
  • European brand - 100% quality, favorable price, short production terms
  • Over 20 years of experience in the semiconductor industry
  • Clients from more than 50 countries trust us
  • 20000 items in the product line for currents from 10A to 15000A, voltages from 100V to 9000V
  • We produce analogues of other manufacturers' products
  • Guaranteed certified quality, warranty period of operation - 2 years


Quality Warranty

Our products are certified and correspond to international standards.
Our company provides a quality guarantee for products of 2 years.
We provide certificates of conformity, reliability reports, data sheets and technical passports at the request of the customer.


Each product is tested for the main parameters, and Test reports of the parameters for each product are provided.

Test Report

Geography of partnership

AS ENERGITM company manufactures and supplies power semiconductors to more than 50 countries around the world.


Logistics and Delivery

We deliver our products all over the world with the services of logistics companies: DHL, TNT, UPS, EMS, Fedex, Aramex.
Products can be delivered by any means of transport: air, sea, rail and road.


AS ENERGITM Semiconductors Manufacturing

Our products range includes rectifier diodes, phase control thyristors in disc and stud design, avalanche diodes and thyristors, fast switching, high frequency thyristors, fast recovery, welding and rotor diodes, triacs, bridge rectifiers, power modules (thyristor, diode, thyristor-diode, IGBT), and air and water heatsinks to them.

Power diodes and thyristors are produced for currents from 10A to 15000A, voltage range from 100V to 9000V.
Power diode and thyristor modules are produced from 25A and up to 1250A, voltage range 400V - 4400V.
The range of power semiconductors also includes equivalent, replacement, analogue and alternative semiconductor devices of global manufacturers.

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