Fast Switching Thyristors TFI (250A-3200A) Disc Package

Fast Switching Thyristor AS ENERGI^TM in disc design, also called "Fast Impulse Thyristor" (TFI) is a press pack type fast switching semiconductor device. Fast switching thyristors meet requirements, such as increased di/dt resistance, low switching losses, short turn-on and turn-off time. Regulating and converting DC and AC currents to 3200A at frequency range is up to 10kHz in circuits with voltages to 4000V (depending on series).

Power disc fast switching (pulse) thyristors series TFI have the following types (current): 250 A, 320 A, 400 A, 500 A, 630 A, 800 A, 1000 A, 1250 A, 1600 A, 2000 A, 2500 A, 3200 Ampere.

Series of high-power disc fast switching thyristors

Part numbering guide for power disc fast switching thyristors

Technical passport for power disc fast switching thyristors

Installation recommendations for fast switching thyristors

Fast switching thyristors are thyristors with additionally normalized reverse recovery charge Q_rr. These devices are adapted for switching current pulses with a high rate of rise at the front and high amplitude.

Fast thyristors are devices with reduced t_q, t_rr, Q_rr, ERQ values designed to operate at higher frequencies modes. The thyristor parameters of V_TM, t_q, Q_rr are interconnected, so a decrease in the value of t_q and Q_rr leads to an increase in V_TM. Fast switching (pulse) thyristors are characterized with a very low turn-off time and higher value (di_T/dt)_cr (to 2500 A/µs) that sets them apart from the standard models. They are used in welding, induction heating and melting, electric transportation, AC drives, UPS, and other systems requiring short turn-on and turn-off times. The thyristors have an industry-standard ceramic sealed housing isolating the functional part and the semiconductor element from mechanical impacts and environment.

The polarity of the thyristor is determined by the icon on the case. On this page are schematic diagrams and circuits of fast switching thyristors with Anode, Cathode, and control electrode (Gate). The technical specifications, part numbering guide, polarity, dimensions and recommended coolers for thyristors are listed below.

Air and water heat sinks are used to cool the thyristors. To keep electrical losses to a minimum and heat dissipation to a maximum, the necessary torque must be provided during assembly, the so-called pressing force F_m. Correspondence of the achieved clamping force to the required one is determined by the deflection of the traverse. For better heat dissipation of discrete thyristor during assembly, heat conducting paste is used, which is not a prerequisite for installation.

The fast pulse thyristors have a sealed housing isolating the functional part and the semiconductor element from mechanical impacts and environment. This fast thyristor has a disc housing with pressure contacts.

Fast turn-off thyristors from AS Energi Global LLC have the following features: low static and dynamic losses, high values of V_DRM/V_RRM, extensive experience of using the devices in various industries, range of voltages from 300 to 4000 V and amperages from 250 to 3200 A, high resistance to thermal and electric cycling, natural or forced air cooling.

Our company provides a quality guarantee for thyristors of 2 years from the date of purchase. When supplying thyristors, if necessary, we provide quality declaration and certificate of conformity.

The final price of fast thyristors depends on the voltage class, quantity, delivery terms, manufacturer, country of origin and form of payment.

For questions regarding the acquisition of High Power Thyristors, Diodes send an email request to:

[email protected]

And we will provide you a commercial offer for delivery.
For a large number, we will provide an individual price!!!

We are open to manufacture products at our production facilities
according to your requests and technical task.

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The photo gallery shows many different semiconductor devices, semiconductor chips and SCRs produced by AS ENERGI^TM, examples of test reports.

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Disc Fast Switching Thyristor Series:

TFI323	TF133...TF933	TF143...TF643	TF153...TF453
TF163, TF263	TF173...TF873	TFI183	TFI193

Fast Switching Thyristors TFI323, TFI133...TFI933 (250A – 400A)

Type	I_T(AV) (T_case)	V_DRM V_RRM	I_TSM	I²t	dv/dt	di/dt	t_q	T_{vj max}	R_th(j-c)	F_m ±10%	W	Package	Dimensions ØDxØdxH	Data-sheet
Type	A	V	kA	kA²·s	V/µs	A/µs	µs	ºC	ºC/W	kN	g	Package	mm	PDF
250 A
TFI323-250	250 (85)	600-1200	3.0	180	1000	800	20-25	125	0.070	6	70	PT21 (T.A1)	42x19x14
TFI833-250	250 (94)	3000	5.7	162	1000	1000	50-125	125	0.040	10	180	PT32 (T.B3)	54x32x20
TFI933-250	250 (92)	3000	5.4	140	200-1000	1600	63	125	0.040	10	180	PT32 (T.B3)	54x32x20
320 A
TFI233-320	320 (85)	2000-2400	6.3	190	200-1000	1600	25-50	125	0.050	10	180	PT32 (T.B3)	54x32x20
TFI333-320	320 (85)	1200-2400	6.3	190	200-1000	1600	25-50	125	0.050	10	180 110	PT32 T.B2	54x32x20 42x25x14
400 A
TFI133-400	400 (89)	1000-1200	7.0	240	200-2500	1600	10-20	125	0.040	10	110	PT31 T.B2	47x27x15 42x25x14
TFI233-400	400 (80)	2000-2400	6.6	210	200-2500	1600	50-63	125	0.050	10	180	PT32 (T.B3)	54x32x20
TFI333-400	400 (88)	600-1500	6.0	180	200-2500	1600	16-32	125	0.040	10	180 110	PT32 T.B2	54x32x20 42x25x14
TFI433-400	400 (89)	300-1200	7.0	240	200-2500	1600	10-20	125	0.040	10	180 110	T.B3 PT31	54x32x20 47x27x15
TFI533-400	400 (88)	1000-1500	6.0	180	200-2500	1600	16-32	125	0.040	10	180	PT32 (T.B3)	54x32x20

Fast Switching Thyristors TFI143...TFI643 (400A – 630A)

Type	I_T(AV) (T_case)	V_DRM V_RRM	I_TSM	I²t	dv/dt	di/dt	t_q	T_{vj max}	R_th(j-c)	F_m ±10%	W	Package	Dimensions ØDxØdxH	Data-sheet
Type	A	V	kA	kA²·s	V/µs	A/µs	µs	ºC	ºC/W	kN	g	Package	mm	PDF
400 A
TFI143-400	400 (90)	1000-1500	8	320	200-1000	2000	10	125	0.032	15	280	PT43	60x35x26
TFI243-400	400 (88)	2000-2200	8	320	200-1000	2000	25	125	0.034	15	280	PT43	60x35x26
TFI343-400	400 (94)	1000-1500	9.5	450	200-2500	2000	10-20	125	0.030	15	180	T.C1	60x38x14
TFI443-400	400 (91)	2000-2200	9.0	400	200-2500	2000	25-50	125	0.030	15	180	T.C1	60x38x14
TFI543-400	400 (92)	1000-1500	9.5	450	200-2500	2000	10-20	125	0.032	15	240	PT42 (T.C2)	60x38x20
TFI643-400	400 (89)	2000-2200	9.0	400	200-2500	2000	25-50	125	0.034	15	240	T.C2	60x38x20
500 A
TFI143-500	500 (85)	1000-1500	9	405	200-1000	2000	12.5	125	0.032	15	280	PT43	60x35x26
TFI243-500	500 (85)	2000-2200	9	400	200-1000	2000	32	125	0.034	15	280	PT43	60x35x26
TFI343-500	500 (91)	1000-1500	11.0	600	200-2500	2000	12.5-25	125	0.030	15	240 180	PT42 T.C1	60x38x20 60x38x14
TFI443-500	500 (89)	2000-2200	10.0	500	200-2500	2000	32-63	125	0.030	15	180	T.C1	60x38x14
TFI543-500	500 (89)	1000-1500	11.0	600	200-2500	2000	12.5-25	125	0.032	15	240	T.C2	60x38x20
TFI643-500	500 (84)	2000-2200	10.0	500	200-2500	2000	32-63	125	0.034	15	240	T.C2	60x38x20
630 A
TFI143-630	630 (80)	1000-1500	10	500	200-1000	2000	16	125	0.032	15	280	PT43	60x35x26
TFI243-630	630 (80)	2000-2200	10	500	200-1000	2000	32	125	0.034	15	280	PT43	60x35x26
TFI343-630	630 (84)	1000-1500	11.5	660	200-2500	2000	16-32	125	0.030	15	240 180	PT42 T.C1	60x38x20 60x38x14
TFI443-630	630 (85)	2000-2200	10.5	550	200-2500	2000	32-63	125	0.030	15	180	PT41 T.C1	60x38x14
TFI543-630	630 (81)	1000-1500	11.5	660	200-2500	1600	16-32	125	0.032	15	240	T.C2	60x38x20
TFI643-630	630 (75)	2000-2200	10.5	550	200-2500	2000	32-63	125	0.034	15	240	T.C2	60x38x20

Fast Switching Thyristors TFI153...TFI453 (700A – 1250A)

Type	I_T(AV) (T_case)	V_DRM V_RRM	I_TSM	I²t	dv/dt	di/dt	t_q	T_{vj max}	R_th(j-c)	F_m ±10%	W	Package	Dimensions ØDxØdxH	Data-sheet
Type	A	V	kA	kA²·s	V/µs	A/µs	µs	ºC	ºC/W	kN	g	Package	mm	PDF
700 A
TFI353-700	700 (87)	3000	14	980	200-1000	2000	40-63	120	0.020	26	550	PT53 (T.D2)	75x51x26
800 A
TFI153-800	800 (85)	1000-1500	19	1800	200-1000	2000	10	125	0.021	26	550	PT53	75x51x26
TFI253-800	800 (85)	1800-2200	17	1400	200-1000	2000	20	125	0.021	26	550	PT53	75x51x26
TFI353-800	800 (80)	3000-3400	20	2000	200-2500	2000	63	125	0.0210	26	550	PT53 (T.D2)	75x51x26
1000 A
TFI153-1000	1000 (80)	1000-1500	20	2000	200-1000	2000	12.5	125	0.021	26	550	PT53	75x51x26
TFI253-1000	1000 (75)	1800-2200	18	1600	200-1000	2000	20	125	0.021	26	550	PT53	75x51x26
TFI353-1000	1000 (79)	2000-2800	21	2200	200-2500	2200	50-63	125	0.020	26	550	PT53 (T.D2)	75x51x26
TFI453-1000	1150 (85)	300-900	18	3600	1000	1000	12.5-20	125	0.0160	24	330	PT51	75x51x14
1250 A
TFI153-1250	1250 (70)	1000-1500	21	2200	200-1000	2000	16	125	0.021	26	550	PT53	75x51x26
TFI253-1250	1250 (71)	1800-2200	19.5	1900	200-1000	2000	50	125	0.021	26	550	PT53	75x51x26
TFI353-1250	1250 (80)	600-1500	21	2400	1000	1000	20	125	0.020	26	550	PT53-1	75x51x26
TFI453-1250	1250 (75)	1000-1500	29	4200	200-2500	2000	16-32	125	0.0210	26	330	PT51 (T.D1)	75x51x14

Fast Switching Thyristors TFI163, TFI263 (1250A, 1600A)

Type	I_T(AV) (T_case)	V_DRM V_RRM	I_TSM	I²t	dv/dt	di/dt	t_q	T_{vj max}	R_th(j-c)	F_m ±10%	W	Package	Dimensions ØDxØdxH	Data-sheet
Type	A	V	kA	kA²·s	V/µs	A/µs	µs	ºC	ºC/W	kN	g	Package	mm	PDF
1250 A
TFI163-1250	1258 (85)	2000-2400	24	5600	1000	1000	50	125	0.015	33	700	PT63	87x60x26
1600 A
TFI163-1600	1520 (80)	900-1400	35	6300	1000	1000	25	125	0.015	33	700	PT63	87x60x26
TFI263-1600	1423 (80)	1500-2000	35	6000	1000	1000	40	125	0.015	33	700	PT63	87x60x26

Fast Switching Thyristors TFI173...TFI873 (1600A, 2000A)

Type	I_T(AV) (T_case)	V_DRM V_RRM	I_TSM	I²t	dv/dt	di/dt	t_q	T_{vj max}	R_th(j-c)	F_m ±10%	W	Package	Dimensions ØDxØdxH	Data-sheet
Type	A	V	kA	kA²·s	V/µs	A/µs	µs	ºC	ºC/W	kN	g	Package	mm	PDF
1600 A
TFI173-1600	1890 (85)	1500-2000	36	8000	1000	1000	40	125	0.011	45	1200	PT73	112x75x26
TFI273-1600	1704 (85)	2000-2400	32	8000	1000	1000	50	125	0.011	45	1200	PT73	112x75x26
TFI373-1600	1600 (91)	2000-2800	40	8000	200-2500	2500	50-63	125	0.010	45	1700	PT74 (T.F5)	112x75x35
TFI473-1600	1569 (85)	3800-4000	34	5700	200-2500	2000	125	125	0.010	45	1700	PT74 (T.F5)	112x75x35
TFI773-1600	1600 (96)	2000-2800	40	8000	200-2500	2500	50-63	125	0.0085	45	1210	PT73 (T.F1)	112x75x26
TFI873-1600	1600 (90)	3800-4000	34	5700	200-2500	2000	125	125	0.0085	45	1210	PT73 (T.F1)	112x75x26
2000 A
TFI173-2000	2000 (89)	900-1400	48.5	11700	200-1000	2500	10	125	0.010	45	1200 1700	PT73 PT74	112x75x26 112x75x35
TFI273-2000	2000 (85)	2000	40	8000	200-1000	2500	32	125	0.010	45	1700	PT74	112x75x35
TFI373-2000	2000 (84)	2000-2500	37.2	6900	200-1000	2500	40-63	125	0.010	45	1700	PT74 (T.F5)	112x75x35
TFI573-2000	2000 (92)	1000-1200	65	21100	200-2500	2500	10-20	125	0.0085	45	1210	PT73 (T.F1)	112x75x26
TFI673-2000	2000 (91)	2000	40	8000	200-2500	2500	32-63	125	0.0085	45	1210	PT73 (T.F1)	112x75x26
TFI773-2000	2000 (90)	2000-2500	40	8000	200-1000	2500	40-63	125	0.0085	45	1210	PT73 (T.F1)	112x75x26

Fast Switching Thyristors TFI183 (2500A, 3200A)

Type	I_T(AV) (T_case)	V_DRM V_RRM	I_TSM	I²t	dv/dt	di/dt	t_q	T_{vj max}	R_th(j-c)	F_m ±10%	W	Package	Dimensions ØDxØdxH	Data-sheet
Type	A	V	kA	kA²·s	V/µs	A/µs	µs	ºC	ºC/W	kN	g	Package	mm	PDF
2500 A
TFI183-2500	2500 (80)	2000-2400	40	12000	1000	1000	40-63	125	0.008	70	1800	PT83	120x86x26
3200 A
TFI183-3200	3214 (70)	1000-1600	45	13500	1000	1000	25-63	125	0.008	70	1800	PT83	120x86x26

Fast Switching Thyristors TFI193 (2500A)

Type	I_T(AV) (T_case)	V_DRM V_RRM	I_TSM	I²t	dv/dt	di/dt	t_q	T_{vj max}	R_th(j-c)	F_m ±10%	W	Package	Dimensions ØDxØdxH	Data-sheet
Type	A	V	kA	kA²·s	V/µs	A/µs	µs	ºC	ºC/W	kN	g	Package	mm	PDF
2500 A
TFI193-2500	2466 (85)	2600-3000	50	11000	1000	1000	63	125	0.0065	85	2200	PT93	147x100x34

Part Numbering Guide for Fast Switching Thyristors:

TFI

933

–

250

–

TFI

–

AS ENERGI^TM Fast Switching Thyristor (Fast Impulse Thyristor)

933

–

Thyristor type (disc type).

250

–

Average current in open state I_T(AV), Amp.

–

Voltage class V_RRM / 100 (Nominal voltage – 3000 V).

–

Parameter of the critical rate of rise of off-state voltage (dV_D/dt)_crit:

Alpha-numeric coding	0	P3	E3	A3	P2	K2	Е2	A2	T1	P1	M1
Digital coding	0	1	2	3	4	5	6	7	8	–	9
Value, V/µs	not standardized	20	50	100	200	320	500	1000	1600	2000	2500

–

Parameter of turn-off time t_q:

Alpha-numeric coding	0	C3	E3	H3	K3	M3	P3	T3	X3	A4	B4	C4	E4
Digital coding	0	1	2	3	4	5	6	7	8	–	9	–	–
Value, µs	not standardized	63	50	40	32	25	20	16	12.5	10	8	6.3	5

–

Parameter of turn-on time t_gt:

Alpha-numeric coding	0	T3	A4	B4	C4	H4	K4	M4	P4	T4	X4	A5	C5
Digital coding	0	–	–	–	–	1	2	3	4	5	6	7	8
Value, µs	not standardized	16	10	8	6.3	4	3.2	2.5	2.0	1.6	1.25	1.0	0.63

Note: Identification of dynamic parameter groups for Fast Switching Thyristors (TFI)

Technical Passport for Thyristors (sample):

When supplying thyristors, if necessary, we provide technical passport and certificate of conformity.

High Power Semiconductors AS ENERGI^TM

Our company is engaged in the manufacturer and sale of wide range of power semiconductors (power thyristors, modules, rectifier diodes, rotor and welding diodes, triacs etc.) currents up to 15000A and voltages to 9000V, and air and water heatsinks to them. You can buy semiconductors in any volumes, and when ordering large lots, the price will be lower.
We have earned the trust of customers and supply products all over the world.

To purchase High Power Thyristors, Diodes, Modules send an email request to:

[email protected]

And we will provide you a commercial offer for delivery.

Photo of Fast Switching Thyristors:

Installation recommendations for fast thyristors:

Assembling disc fast thyristor with a heatsink

The reliability of heat transfer and electrical contact between the mating surfaces of the thyristor and the cooler over the entire temperature range is ensured by appropriate torque (clamping force).

Before assembly you should perform visual inspection (1) contact surfaces for mechanical damages and wipe (2), soaked with alcohol (toluene, gasoline, acetone).

After inspection, fix the current contacts (leads), install a pin to fix the alignment of the structure.

To improve the parameters of heat transfer it is recommended to lubricate (3) a thin layer of silicone thermal conductive paste before the assembly, which is not a mandatory condition for installation.

Install the thyristor (3), the second part of the cooler, the fiberglass insulator and the thrust washer.

To thread the traverse (4) and evenly tighten the nuts. Make sure no misalignment and evenness of the contact surfaces.

When the parts are sufficiently clamped but moveable, we recommend placing the cooler on a flat surface and checking the tolerance for parallelism of the overall adjacent plane of the surfaces (5).

Clamp each nut in turn (about a quarter turn) to the stop (6). The amount of deflection of the traverse determines whether the achieved clamping force corresponds to the required one.

After installation, the fasteners (nuts and washers) must be additionally secured against corrosion.

Tips and recommendations for power thyristors:

The power thyristors should not be operated for long periods of time at their limit load for all parameters. In this case, the safety factor is determined by the required degree of reliability of the device.

Replace a failed power thyristor with a thyristor that matches the parameters of the one being replaced.

Supercooling must be provided when operating in an environment with an elevated ambient temperature.

Periodic cleaning of power thyristors and coolers to remove dust and contaminants is recommended to ensure proper heat dissipation.

Inductive current dividers (often twisted toroidal wire) should be used to equalize currents between power thyristors connected in parallel. The most popular connection methods are closed circuit, common coil circuit, or power thyristor. The efficiency of current dividers in this case is determined by the cross section of the magnetic wire.

Prevention of voltage unbalance when power thyristors are connected in series is achieved by using shunt resistors connected in parallel with each thyristor. Voltage equalization in transient conditions is provided by connecting capacitors in parallel to each thyristor.

It is strictly forbidden to touch power thyristors under high voltage during operation.

Why choose AS ENERGI^TM

Own production facilities, including semiconductor silicon chips production
European brand - 100% quality, favorable price, short production terms
Over 20 years of experience in the semiconductor industry
Clients from more than 50 countries trust us
20000 items in the product line for currents from 10A to 15000A, voltages from 100V to 9000V
We produce analogues of other manufacturers' products
Guaranteed certified quality, warranty period of operation - 2 years

Quality Warranty

Our products are certified and correspond to international standards.
Our company provides a quality guarantee for products of 2 years.
We provide certificates of conformity, reliability reports, data sheets and technical passports at the request of the customer.

Each product is tested for the main parameters, and Test reports of the parameters for each product are provided.

Geography of partnership

AS ENERGI^TM company manufactures and supplies power semiconductors to more than 50 countries around the world.

Logistics and Delivery

We deliver our products all over the world with the services of logistics companies: DHL, TNT, UPS, EMS, Fedex, Aramex.
Products can be delivered by any means of transport: air, sea, rail and road.

AS ENERGI^TM Semiconductors Manufacturing

Our products range includes rectifier diodes, phase control thyristors in disc and stud design, avalanche diodes and thyristors, fast switching, high frequency thyristors, fast recovery, welding and rotor diodes, triacs, bridge rectifiers, power modules (thyristor, diode, thyristor-diode, IGBT), and air and water heatsinks to them.

Power diodes and thyristors are produced for currents from 10A to 15000A, voltage range from 100V to 9000V.
Power diode and thyristor modules are produced from 25A and up to 1250A, voltage range 400V - 4400V.
The range of power semiconductors also includes equivalent, replacement, analogue and alternative semiconductor devices of global manufacturers.

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