Phase Control Thyristor 200A, Stud Type T161-200 (300 – 1600V)

Average forward current, ITAV 200A
Voltage, VDRM/VRRM 300–1600V
Voltage code, VRRM / 100 3 – 16
T161-200 on request
Weight 240 g
Datasheet Datasheet

Phase Control Thyristor T161-200 AS ENERGITM is general purpose stud thyristor, also known as Silicon Controlled Rectifier (SCR). This is a power thyristor designed for converting and control DC and AC currents up to 200A with frequency up to 500Hz in circuits with voltages up to 300V – 1600V (voltage class from 3 to 16). Thyristor package type – ST6, mounting standard thread – М20х1.5, (on request, UNF thread 3/4"-16UNF-2A), weight – 240 g.

Thyristors are supplied in stud design. The base of the thyristor is the Anode, the flexible power lead is the Cathode, the flexible wire exiting the base of the power lead is the auxiliary cathode, the flexible wire exiting the case is the control electrode (Gate). This SCR thyristor can be an alternative product, replacement, analog, equivalent for other types thyristors 160A, 170A, 180A, 190A, 200 amp in a stud housing.

Air and water heat sinks are used to cool the thyristors. To provide reliable thermal and electrical contact with the heatsink a tightening torque Md must be observed during assembly. For better heat dissipation of thyristor during assembly, heat conducting paste is used.

The thyristors have a hermetic ceramic housing isolating the functional part and the semiconductor element from mechanical impacts and environment. Stud screw fit thyristor with a flexible power lead. Stud thyristors are notable for their ability to be used on moving parts.

Specifications and parameters, datasheets PDF, sample technical passport, dimensions, outline drawings, case diagrams thyristors, recommended coolers are listed below.

Our company provides a quality guarantee for power scr thyristors of 2 years from the date of purchase. When supplying thyristors, if necessary, we provide technical passport, certificate of conformity.

Thyristor ratings: T161-200-3 (200A 300V), T161-200-4 (200A 400V), T161-200-5 (200A 500V), T161-200-6 (200A 600V), T161-200-7 (200A 700V), T161-200-8 (200A 800V), T161-200-9 (200A 900V), T161-200-10 (200A 1000V), T161-200-12 (200A 1200V), T161-200-14 (200A 1400V), T161-200-16 (200A 1600V).

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The final price for phase control stud thyristors depends on the voltage class, quantity, delivery terms, manufacturer, country of origin and form of payment.

General specifications of phase control thyristors T161-200:

Thyristor specifications T161-200
Maximum allowable average forward current (Case temperature) IT(AV) (Tcase) 200 A (87ºC)
Repetitive peak off-state voltage; Repetitive peak reverse voltage VDRM/VRRM 300-1600 V
RMS on-state current ITRMS 314 A
Surge on-state current ITSM 5 kA
Safety factor I2t 125 kA2·s
Peak on-state voltage, max VTM 1.60 V
Peak on-state current ITM 628 A
On-state threshold voltage, max VT(TO) 1.00 V
On-state slope resistance, max rT 1.05 mΩ
Turn-off time, max tq 250 µs
Repetitive peak off-state and Repetitive peak reverse currents, max IDRM/IRRM 15 mA
Critical rate of rise of off-state voltage, min (dVD/dt)cr 20-1000 V/µs
Gate trigger direct voltage, max VGT 2.5 V
Gate trigger direct current, max IGT 200 mA
Critical rate of rise of on-state current (diT/dt)cr 160 A/µs
Temperature of p-n junction, max Tvj max 125 ºC
Thermal resistance, junction to case, max Rth(j-c) 0.13 ºC/W
Mounting torque Md 20-30 N·m
Weight, approx. W 240 g
Package type, Thread Outline ST6, M20x1.5
Recommended heatsinks Heatsinks O171, O271, O371, O471, OM101
Datasheet PDF PDF

Part Numbering Guide for SCR Thyristors T161-200:

T 161 200 16 5 2  
T Thyristor, brand AS ENERGITM
161 Thyristor type (stud type).
200 Average current in open state IT(AV), Amp.
16 Voltage class VRRM / 100  (Nominal voltage – 1600 V).
5 Parameter of the critical rate of rise of off-state voltage (dVD/dt)cr:
Alpha-numeric coding P2 K2 Е2 A2 T1 P1 M1
Digital coding 4 5 6 7 8 9
(dVD/dt)cr, V/µs 200 320 500 1000 1600 2000 2500
2 Parameter of turn-off time tq:
Alpha-numeric coding 0 B2 C2 E2 H2 K2 М2 P2 T2 X2 A3
Digital coding 0 1 2 3 4
tq, µs not standardized 800 630 500 400 320 250 200 160 125 100
U None – stud base metric ISO threads (standard);
U – stud base inch UNF threads (on request).

Polarity (anode, cathode, gate) and dimensions of stud thyristor T161-200:

Thyristor polarity Dimensions

Thyristor T161-200 datasheet:

PDFDownload pdf datasheet for thyristors T161-200

Technical Passport for Power Stud Thyristors (sample):

When supplying thyristors, if necessary, we provide technical passport and certificate of conformity.

  • Technical Passport
  • Technical Passport
  • Technical Passport

High Power Semiconductors AS ENERGITM

Our company is engaged in the manufacturer and sale of wide range of power semiconductors (power thyristors, modules, rectifier diodes, rotor and welding diodes, triacs etc.) currents up to 15000A and voltages to 9000V, and air and water heatsinks to them. You can buy semiconductors in any volumes, and when ordering large lots, the price will be lower.
We have earned the trust of customers and supply products all over the world.

For questions regarding the acquisition of Power Thyristors, Diodes, Modules send an email request to:

[email protected]

And we will provide you a commercial offer for delivery.
For a large number, we will provide an individual price!!!

We are open to manufacture products at our production facilities
according to your requests and technical task.

Photo Gallery

The photo gallery shows many different semiconductor devices, semiconductor chips and SCRs produced by AS ENERGITM, examples of test reports.

Heat sinks for power stud thyristors:

Heat sinks (radiators) are used for cooling of power semiconductor devices in stud design.

Heat sinks of coolers are made of aluminum radiator profiles and do not require additional protective coating when used in various climatic conditions.

See for more information about heatsinks: "Air-cooled heatsinks for stud devices".

Photo of High Power Stud Type Thyristors:

  • Stud Thyristors
  • Stud Thyristors
  • Stud Thyristors
  • Stud Thyristors
  • Stud Thyristors
  • Stud Thyristors

icon Why choose AS ENERGITM

  • Own production facilities, including semiconductor silicon chips production
  • European brand - 100% quality, favorable price, short production terms
  • Over 20 years of experience in the semiconductor industry
  • Clients from more than 50 countries trust us
  • 20000 items in the product line for currents from 10A to 15000A, voltages from 100V to 9000V
  • We produce analogues of other manufacturers' products
  • Guaranteed certified quality, warranty period of operation - 2 years


Quality Warranty

Our products are certified and correspond to international standards.
Our company provides a quality guarantee for products of 2 years.
We provide certificates of conformity, reliability reports, data sheets and technical passports at the request of the customer.


Each product is tested for the main parameters, and Test reports of the parameters for each product are provided.

Test Report

Geography of partnership

AS ENERGITM company manufactures and supplies power semiconductors to more than 50 countries around the world.


Logistics and Delivery

We deliver our products all over the world with the services of logistics companies: DHL, TNT, UPS, EMS, Fedex, Aramex.
Products can be delivered by any means of transport: air, sea, rail and road.


AS ENERGITM Semiconductors Manufacturing

Our products range includes rectifier diodes, phase control thyristors in disc and stud design, avalanche diodes and thyristors, fast switching, high frequency thyristors, fast recovery, welding and rotor diodes, triacs, bridge rectifiers, power modules (thyristor, diode, thyristor-diode, IGBT), and air and water heatsinks to them.

Power diodes and thyristors are produced for currents from 10A to 15000A, voltage range from 100V to 9000V.
Power diode and thyristor modules are produced from 25A and up to 1250A, voltage range 400V - 4400V.
The range of power semiconductors also includes equivalent, replacement, analogue and alternative semiconductor devices of global manufacturers.

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