Phase Control Thyristor 250A, Stud Type T271-250 (100 – 800V)
Average forward current, ITAV | 250A |
Voltage, VDRM/VRRM | 100–800V |
Voltage code, VRRM / 100 | 1 – 8 |
T271-250 | on request |
Package Thread |
ST7 (T.SB1) М24х1.5 |
Weight | 440 g |
Datasheet | ![]() |
Phase Control Thyristor T271-250 AS ENERGITM is general purpose stud thyristor, also known as Silicon Controlled Rectifier (SCR). This is a power thyristor designed for converting and control DC and AC currents up to 250A with frequency up to 500Hz in circuits with voltages up to 100V – 800V (voltage class from 1 to 8). Thyristor package type – ST7, mounting standard thread – М24х1.5, (on request, UNF thread 3/4"-16UNF-2A), weight – 440 g.
Thyristors are supplied in stud design. The base of the thyristor is the Anode, the flexible power lead is the Cathode, the flexible wire exiting the base of the power lead is the auxiliary cathode, the flexible wire exiting the case is the control electrode (Gate). This SCR thyristor can be an alternative product, replacement, analog, equivalent for other types thyristors 210A, 220A, 230A, 240A, 250 amp in a stud housing.
Air and water heat sinks are used to cool the thyristors. To provide reliable thermal and electrical contact with the heatsink a tightening torque Md must be observed during assembly. For better heat dissipation of thyristor during assembly, heat conducting paste is used.
The thyristors have a hermetic ceramic housing isolating the functional part and the semiconductor element from mechanical impacts and environment. Stud screw fit thyristor with a flexible power lead. Stud thyristors are notable for their ability to be used on moving parts.
Specifications and parameters, datasheets PDF, sample technical passport, dimensions, outline drawings, case diagrams thyristors, recommended coolers are listed below.
Our company provides a quality guarantee for power scr thyristors of 2 years from the date of purchase. When supplying thyristors, if necessary, we provide technical passport, certificate of conformity.
Thyristor ratings: T271-250-1 (250A 100V), T271-250-2 (250A 200V), T271-250-3 (250A 300V), T271-250-4 (250A 400V), T271-250-5 (250A 500V), T271-250-6 (250A 600V), T271-250-7 (250A 700V), T271-250-8 (250A 800V).
The final price for phase control stud thyristors depends on the voltage class, quantity, delivery terms, manufacturer, country of origin and form of payment.
General specifications of phase control thyristors T271-250:
Thyristor specifications | T271-250 | |
Maximum allowable average forward current (Case temperature) | IT(AV) (Tcase) | 250 A (123ºC) 409 A (100ºC) |
Repetitive peak off-state voltage; Repetitive peak reverse voltage | VDRM/VRRM | 100-800 V |
RMS on-state current | ITRMS | 392 A |
Surge on-state current | ITSM | 10.0 kA |
Safety factor | I2t | 450 kA2·s |
Peak on-state voltage, max | VTM | 1.35 V |
Peak on-state current | ITM | 785 A |
On-state threshold voltage, max | VT(TO) | 0.906 V |
On-state slope resistance, max | rT | 0.531 mΩ |
Turn-off time, max | tq | 125-500 µs |
Repetitive peak off-state and Repetitive peak reverse currents, max | IDRM/IRRM | 70 mA |
Critical rate of rise of off-state voltage, min | (dVD/dt)cr | 200-1000 V/µs |
Gate trigger direct voltage, max | VGT | 2.5 V |
Gate trigger direct current, max | IGT | 250 mA |
Critical rate of rise of on-state current | (diT/dt)cr | 800 A/µs |
Temperature of p-n junction, max | Tvj max | 150 ºC |
Thermal resistance, junction to case, max | Rth(j-c) | 0.085 ºC/W |
Mounting torque | Md | 25-35 N·m |
Weight, approx. | W | 440 g |
Package type, Thread | Outline | ST7 (T.SB1), M24x1.5 |
Recommended heatsinks | Heatsinks | O181, O281, OM105 |
Datasheet | ![]() |
Part Numbering Guide for SCR Thyristors T271-250:
T | 271 | – | 250 | – | 8 | – | 5 | 2 | – |
T | – | Thyristor, ![]() |
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271 | – | Thyristor type (stud type). | ||||||||||||||||||||||||||||||||||||
250 | – | Average current in open state IT(AV), Amp. | ||||||||||||||||||||||||||||||||||||
8 | – | Voltage class VRRM / 100 (Nominal voltage – 800 V). | ||||||||||||||||||||||||||||||||||||
5 | – | Parameter of the critical rate of rise of off-state voltage (dVD/dt)cr:
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2 | – | Parameter of turn-off time tq:
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U | – | None – stud base metric ISO threads (standard); U – stud base inch UNF threads (on request). |
High Power Semiconductors AS ENERGITM
Our company is engaged in the manufacturer and sale of wide range of power semiconductors (power thyristors, modules, rectifier diodes, rotor and welding diodes, triacs etc.) currents up to 15000A and voltages to 9000V, and air and water heatsinks to them. You can buy semiconductors in any volumes, and when ordering large lots, the price will be lower.
We have earned the trust of customers and supply products all over the world.
For questions regarding the acquisition of Power Thyristors, Diodes, Modules send an email request to:
And we will provide you a commercial offer for delivery.
For a large number, we will provide an individual price!!!
We are open to manufacture products at our production facilities
according to your requests and technical task.
Heat sinks for power stud thyristors:
Heat sinks (radiators) are used for cooling of power semiconductor devices in stud design.
Heat sinks of coolers are made of aluminum radiator profiles and do not require additional protective coating when used in various climatic conditions.
See for more information about coolers "Air-heatsink" and "Water-heatsink".
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