Phase Control Thyristor 1200A, 1250A, type T253-1250 (400V – 1800V)

Average forward current, ITAV 1250A
Voltage, VDRM/VRRM 400–1800V
Voltage code, VRRM / 100 4 – 18
T253-1250 on request
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Package
Dimensions ØD×Ød×H
PT53
75x51x26 mm
Weight 550 g
Datasheet Datasheet

Phase Control Thyristor T253-1250 AS ENERGITM is general purpose disc thyristor, also known as Silicon Controlled Rectifier (SCR). This is a power thyristor designed for converting and control DC and AC currents up to 1250A with frequency up to 500Hz in circuits with voltages up to 400V – 1800V (voltage class from 4 to 18). Thyristor dimensions ØDxØdxH – 75x51x26 mm (outer case diameter X contact surface diameter X case height), weight – 550 g.

Thyristor ratings: T253-1250-4 (1250A 400V), T253-1250-5 (1250A 500V), T253-1250-6 (1250A 600V), T253-1250-7 (1250A 700V), T253-1250-8 (1250A 800V), T253-1250-9 (1250A 900V), T253-1250-10 (1250A 1000V), T253-1250-12 (1250A 1200V), T253-1250-14 (1250A 1400V), T253-1250-16 (1250A 1600V), T253-1250-18 (1250A 1800V).

The anode and cathode of the thyristor (polarity) are determined by the symbol on the case. Thyristors are in a press pack disc (capsule, tablet) housing. This SCR thyristor can be an alternative product, replacement, analog, equivalent for other types thyristors 1100A, 1150A, 1200A, 1250 amp in a disk package.

For cooling during the operation of power thyristors they are mounted with coolers (heat sinks). Depending on the amount of heat generated and the working conditions of the semiconductors, either natural air flow cooling or forced cooling can be used.

When assembling, the necessary clamping force Fm specific for each type of thyristor case (indicated in the parameter table) must be provided.

Thyristors SCR disc type are used in power equipment – power and control units, power regulators, converters (e.g. melting furnaces), controllers where fast switching and control of currents is necessary.

Specifications and parameters, datasheets PDF, sample technical passport, dimensions, outline drawings, case diagrams thyristors, recommended coolers are listed below.

Our company provides a quality guarantee for power scr thyristors of 2 years from the date of purchase. When supplying thyristors, if necessary, we provide technical passport, certificate of conformity.

Read more

The final price for phase control disc thyristors depends on the voltage class, quantity, delivery terms, manufacturer, country of origin and form of payment.


General specifications of phase control thyristors T253-1250:

Thyristor specifications T253-1250
Maximum allowable average forward current (Case temperature) IT(AV) (Tcase) 1270 A (85ºC)
1580 A (70ºC)
Repetitive peak off-state voltage; Repetitive peak reverse voltage VDRM/VRRM 400-1800 V
RMS on-state current ITRMS 2480 A
Surge on-state current ITSM 28 kA
Safety factor I2t 3920 kA2·s
Peak on-state voltage, max VTM 1.60 V
Peak on-state current ITM 3925 A
On-state threshold voltage, max VT(TO) 0.95 V
On-state slope resistance, max rT 0.200 mΩ
Turn-off time, max tq 160 µs
Repetitive peak off-state and Repetitive peak reverse currents, max IDRM/IRRM 50 mA
Critical rate of rise of off-state voltage, min (dVD/dt)cr 500-1600 V/µs
Gate trigger direct voltage, max VGT 2.5 V
Gate trigger direct current, max IGT 200 mA
Critical rate of rise of on-state current (diT/dt)cr 200 A/µs
Temperature of p-n junction, max Tvj max 125 ºC
Thermal resistance, junction to case, max Rth(j-c) 0.020 ºC/W
Clamping force Fm ±10% 24 kN
Weight, approx. W 550 g
Package type, Dimensions ØDxØdxH PT53
75x51x26 mm
Recommended heatsinks Heatsinks O153, O253, OM106
Datasheet PDF PDF

Part Numbering Guide for SCR Thyristors T253-1250:

T 253 1250 18 5 2
T Thyristor, brand AS ENERGITM
253 Thyristor type (disc type).
1250 Average current in open state IT(AV), Amp.
18 Voltage class VRRM / 100  (Nominal voltage – 1800 V).
5 Parameter of the critical rate of rise of off-state voltage (dVD/dt)cr:
Alpha-numeric coding P2 K2 Е2 A2 T1 P1 M1
Digital coding 4 5 6 7 8 9
(dVD/dt)cr, V/µs 200 320 500 1000 1600 2000 2500
2 Parameter of turn-off time tq:
Alpha-numeric coding 0 B2 C2 E2 H2 K2 М2 P2 T2 X2 A3
Digital coding 0 1 2 3 4
tq, µs not standardized 800 630 500 400 320 250 200 160 125 100

Polarity (anode, cathode, gate) and dimensions of disc thyristor T253-1250:

Thyristor polarity Dimensions

Thyristor T253-1250 datasheet:

PDFDownload pdf datasheet for thyristors T253-1250


Technical Passport for Phase Control Thyristors (sample):

When supplying thyristors, if necessary, we provide technical passport and certificate of conformity.

  • Technical Passport
  • Technical Passport
  • Technical Passport

High Power Semiconductors AS ENERGITM

Our company is engaged in the manufacturer and sale of wide range of power semiconductors (power thyristors, modules, rectifier diodes, rotor and welding diodes, triacs etc.) currents up to 15000A and voltages to 9000V, and air and water heatsinks to them. You can buy semiconductors in any volumes, and when ordering large lots, the price will be lower.
We have earned the trust of customers and supply products all over the world.

For questions regarding the acquisition of Power Thyristors, Diodes, Modules send an email request to:

[email protected]

And we will provide you a commercial offer for delivery.
For a large number, we will provide an individual price!!!

We are open to manufacture products at our production facilities
according to your requests and technical task.


Photo Gallery

The photo gallery shows many different semiconductor devices, semiconductor chips and SCRs produced by AS ENERGITM, examples of test reports.


Heat sinks for power disc thyristors:

Heat sinks (radiators) are used for single- and double-sided cooling of power semiconductor devices in disc design.

Heat sinks of coolers are made of aluminum radiator profiles and do not require additional protective coating when used in various climatic conditions.

See for more information about heatsinks: "Air-cooled heatsinks O series for disc devices", "Air heatsink SF series", "Water heatsink SS series".


Photo of Phase Control Thyristor SCR:


icon Why choose AS ENERGITM

  • Own production facilities, including semiconductor silicon chips production
  • European brand - 100% quality, favorable price, short production terms
  • Over 20 years of experience in the semiconductor industry
  • Clients from more than 50 countries trust us
  • 20000 items in the product line for currents from 10A to 15000A, voltages from 100V to 9000V
  • We produce analogues of other manufacturers' products
  • Guaranteed certified quality, warranty period of operation - 2 years

 

Quality Warranty

Our products are certified and correspond to international standards.
Our company provides a quality guarantee for products of 2 years.
We provide certificates of conformity, reliability reports, data sheets and technical passports at the request of the customer.

Certificates

Each product is tested for the main parameters, and Test reports of the parameters for each product are provided.

Test Report

Geography of partnership

AS ENERGITM company manufactures and supplies power semiconductors to more than 50 countries around the world.

Geography

Logistics and Delivery

We deliver our products all over the world with the services of logistics companies: DHL, TNT, UPS, EMS, Fedex, Aramex.
Products can be delivered by any means of transport: air, sea, rail and road.

Logistics

AS ENERGITM Semiconductors Manufacturing

Our products range includes rectifier diodes, phase control thyristors in disc and stud design, avalanche diodes and thyristors, fast switching, high frequency thyristors, fast recovery, welding and rotor diodes, triacs, bridge rectifiers, power modules (thyristor, diode, thyristor-diode, IGBT), and air and water heatsinks to them.

Power diodes and thyristors are produced for currents from 10A to 15000A, voltage range from 100V to 9000V.
Power diode and thyristor modules are produced from 25A and up to 1250A, voltage range 400V - 4400V.
The range of power semiconductors also includes equivalent, replacement, analogue and alternative semiconductor devices of global manufacturers.


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