Phase Control Thyristor 800A, type T133-800 (400V – 800V)
|Average forward current, ITAV||800A|
|Voltage code, VRRM / 100||4 – 8|
Phase Control Thyristor T133-800 AS ENERGITM is general purpose disc thyristor, also known as Silicon Controlled Rectifier (SCR). This is a power thyristor designed for converting and control DC and AC currents up to 800A with frequency up to 500Hz in circuits with voltages up to 400V – 800V (voltage class from 4 to 8). Thyristor dimensions ØDxØdxH – 47x27x15 mm (outer case diameter X contact surface diameter X case height), weight – 100 g.
Thyristor ratings: T133-800-4 (800A 400V), T133-800-5 (800A 500V), T133-800-6 (800A 600V), T133-800-7 (800A 700V), T133-800-8 (800A 800V).
The anode and cathode of the thyristor (polarity) are determined by the symbol on the case. Thyristors are in a press pack disc (capsule, tablet) housing. This SCR thyristor can be an alternative product, replacement, analog, equivalent for other types thyristors 750A, 780A, 790A, 800 amp in a disk package.
For cooling during the operation of power thyristors they are mounted with coolers (heat sinks). Depending on the amount of heat generated and the working conditions of the semiconductors, either natural air flow cooling or forced cooling can be used.
When assembling, the necessary clamping force Fm specific for each type of thyristor case (indicated in the parameter table) must be provided.
Thyristors SCR disc type are used in power equipment – power and control units, power regulators, converters (e.g. melting furnaces), controllers where fast switching and control of currents is necessary.
Specifications and parameters, datasheets PDF, sample technical passport, dimensions, outline drawings, case diagrams thyristors, recommended coolers are listed below.
Our company provides a quality guarantee for power scr thyristors of 2 years from the date of purchase. When supplying thyristors, if necessary, we provide technical passport, certificate of conformity.
The final price for phase control disc thyristors depends on the voltage class, quantity, delivery terms, manufacturer, country of origin and form of payment.
General specifications of phase control thyristors T133-800:
|Maximum allowable average forward current (Case temperature)||IT(AV) (Tcase)||1100 A (85°C)
1270 A (70°C)
|Repetitive peak off-state voltage; Repetitive peak reverse voltage||VDRM/VRRM||400-800 V|
|RMS on-state current||ITRMS||1990 A|
|Surge on-state current||ITSM||12 kA|
|Safety factor||I2t||720 kA2·s|
|Peak on-state voltage, max||VTM||1.60 V|
|Peak on-state current||ITM||2513 A|
|On-state threshold voltage, max||VT(TO)||0.90 V|
|On-state slope resistance, max||rT||0.287 mΩ|
|Turn-off time, max||tq||100 µs|
|Repetitive peak off-state and Repetitive peak reverse currents, max||IDRM/IRRM||50 mA|
|Critical rate of rise of off-state voltage, min||(dVD/dt)cr||1600 V/µs|
|Gate trigger direct voltage, max||VGT||2.5 V|
|Gate trigger direct current, max||IGT||250 mA|
|Critical rate of rise of on-state current||(diT/dt)cr||200 A/µs|
|Temperature of p-n junction, max||Tvj max||150 ºC|
|Thermal resistance, junction to case, max||Rth(j-c)||0.035 ºC/W|
|Clamping force||Fm ±10%||10 kN|
|Weight, approx.||W||100 g|
|Package type, Dimensions||ØDxØdxH||PT31
|Recommended heatsinks||Heatsinks||O143, O243, O343, OM103, OM104|
Part Numbering Guide for SCR Thyristors T133-800:
|T||–||Thyristor, AS ENERGITM|
|133||–||Thyristor type (disc type).|
|800||–||Average current in open state IT(AV), Amp.|
|8||–||Voltage class VRRM / 100 (Nominal voltage – 800 V).|
|7||–||Parameter of the critical rate of rise of off-state voltage (dVD/dt)cr:
|3||–||Parameter of turn-off time tq:
Thyristor T133-800 datasheet:
High Power Semiconductors AS ENERGITM
Our company is engaged in the manufacturer and sale of wide range of power semiconductors (power thyristors, modules, rectifier diodes, rotor and welding diodes, triacs etc.) currents up to 15000A and voltages to 9000V, and air and water heatsinks to them. You can buy semiconductors in any volumes, and when ordering large lots, the price will be lower.
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according to your requests and technical task.
Heat sinks for power disc thyristors:
Heat sinks (radiators) are used for single- and double-sided cooling of power semiconductor devices in disc design.
Heat sinks of coolers are made of aluminum radiator profiles and do not require additional protective coating when used in various climatic conditions.
Photo of Phase Control Thyristor SCR:
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- Own production facilities, including semiconductor silicon chips production
- European brand - 100% quality, favorable price, short production terms
- Over 20 years of experience in the semiconductor industry
- Clients from more than 50 countries trust us
- 20000 items in the product line for currents from 10A to 15000A, voltages from 100V to 9000V
- We produce analogues of other manufacturers' products
- Guaranteed certified quality, warranty period of operation - 2 years
Our products are certified and correspond to international standards.
Our company provides a quality guarantee for products of 2 years.
We provide certificates of conformity, reliability reports, data sheets and technical passports at the request of the customer.
Each product is tested for the main parameters, and Test reports of the parameters for each product are provided.
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AS ENERGITM company manufactures and supplies power semiconductors to more than 50 countries around the world.
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AS ENERGITM Semiconductors Manufacturing
Our products range includes rectifier diodes, phase control thyristors in disc and stud design, avalanche diodes and thyristors, fast switching, high frequency thyristors, fast recovery, welding and rotor diodes, triacs, bridge rectifiers, power modules (thyristor, diode, thyristor-diode, IGBT), and air and water heatsinks to them.
Power diodes and thyristors are produced for currents from 10A to 15000A, voltage range from 100V to 9000V.
Power diode and thyristor modules are produced from 25A and up to 1250A, voltage range 400V - 4400V.
The range of power semiconductors also includes equivalent, replacement, analogue and alternative semiconductor devices of global manufacturers.