Thyristor module MT4-130-28-F

Average forward current, ITAV/IFAV 130A
Voltage, VRRM/VDRM 2400 – 2800V
Voltage code, VRRM / 100 24 – 28
MT4-130-28-F on request
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Weight 0.35 kg
Package,
Dimensions LxBxH
F
94x34x30
Datasheet Datasheet

Power thyristor module MT4-130-28-F AS ENERGITM in an international standard package, 130A 2800V.

Used to convert DC and AC currents up to 130 ampere, with a frequency of up to 500 Hz on circuits with voltages up to 2800 volt (28 class).

Thyristor modules MT4-130-28-F are in a standard package F: base dimensions 34x94 mm, housing height – 30 mm, weight – 0.35 kg. Two-position module is a monolithic construction of two semiconductor thyristors: type thyristor-thyristor. Module connection diagram MT4-130-28-F – common cathode.

Series (ratings) of thyristor modules: MT4-130-24-F (130A 2400V), MT4-130-26-F (130A 2600V), MT4-130-28-F (130A 2800V).

Modules connection diagram MT4-130-28-F
  • Main terminals are at the top of the case and are numbered 1, 2, 3;

  • Control terminals are marked on the diagram as G1, G2;

  • Additional cathodes are marked on the diagram as K1, K2;

High thermal cyclic resistance and reliable operation of low-frequency thyristor modules MT4-130-28-F when switching high currents is achieved due to their design features and stable parameters of galvanic isolation.

The MT4-130-28-F thyristor modules have a clamp-on design that provides easy mounting and good contact with the cooler for heat dissipation. Several modules can be mounted on one cooler without additional insulation, which significantly reduces the overall dimensions of the assembly. Between the module and the heat sink (heat sink) it is recommended to use a thermally conductive substrate lubricated with thermal paste.

The two-position modules have different wiring diagrams (electrical circuit diagrams): MT3half-bridge; MT4common cathode circuit; MT5common anode circuit.

Our modules are offered in several dual and single device topologies for almost all phase control or rectifier applications.

Our company provides a quality guarantee for thyristor / diode modules of 2 years from the date of purchase. When supplying thyristor / diode modules, if necessary, we provide technical passport and certificate of conformity.

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The final price for thyristor / diode modules depends on the class, quantity, delivery terms, manufacturer, country of origin and form of payment.

General specifications of thyristor-thyristor module:

Thyristor module specifications MT4-130-28-F
Maximum allowable average forward current (Case temperature) IT(AV) (TC) 130 А (85ºC)
Repetitive pulsed reverse voltage; Repetitive pulsed closed state voltage VRRM/VDRM 2800 V
Surge on-state current ITSM 3.4 kA
Peak on-state voltage VTM 1.8 V
Peak on-state current ITM 2500 A
Threshold voltage VT(TO) 0.85 V
On-state slope resistance rT 2.400 mΩ
Turn-off time tq 320 µs
Junction temperature Tj max 125 ºC
Maximum case operating temperature Tc max 125 ºC
Thermal resistance, junction to case Rth(j-c) 0.1900 ºC/W
Electrical insulation strength VISOL 3.00 kV
Design (switches) - dual component
Type (circuit diagram) - thyristor-thyristor
Connection diagram - common cathode
Weight W 0.35 kg
Package - F
Dimensions, mm L×B×H 94x34x30 mm
Datasheet PDF PDF

Part numbering guide for thyristor–thyristor modules MT4-130-28-F:

MT 4 130 28 A2 K2 F N
MT Thyristor module, brand AS ENERGITM
4 Connection diagram:
3 – half-bridge;
4 – common cathode circuit;
5 – common anode circuit.
130 Rated current IF(AV), A.
28 Voltage class VRRM / 100   (Nominal voltage – 2800 V).
A2 Parameter of the critical rate of rise of off-state voltage (dVD/dt)cr:
Alpha-numeric coding P2 K2 Е2 A2 T1 P1 M1
Digital coding 4 5 6 7 8 9
(dVD/dt)cr, V/µs 200 320 500 1000 1600 2000 2500
K2 Parameter of turn-off time tq:
Alpha-numeric coding 0 B2 C2 E2 H2 K2 М2 P2 T2 X2 A3
Digital coding 0 1 2 3 4
tq, µs not standardized 800 630 500 400 320 250 200 160 125 100
F Housing type.
N Ambient conditions: N – Normal.

Dimensions of power thyristor modules MT4-130-28-F:

Dimensions of thyristor modules MT4-130-28-F

Package F


Thyristor module connection diagram MT4-130-28-F:

Thyristor module connection diagram MT4-130-28-F

1, 2, 3 – main terminals.
G1, K1, G2, K2 (4, 5, 6, 7) – control terminals.



icon Why choose AS ENERGITM

  • Own production facilities, including semiconductor silicon chips production
  • European brand - 100% quality, favorable price, short production terms
  • Over 20 years of experience in the semiconductor industry
  • Clients from more than 50 countries trust us
  • 20000 items in the product line for currents from 10A to 15000A, voltages from 100V to 9000V
  • We produce analogues of other manufacturers' products
  • Guaranteed certified quality, warranty period of operation - 2 years

 

Quality Warranty

Our products are certified and correspond to international standards.
Our company provides a quality guarantee for products of 2 years.
We provide certificates of conformity, reliability reports, data sheets and technical passports at the request of the customer.

Certificates

Each product is tested for the main parameters, and Test reports of the parameters for each product are provided.

Test Report

Geography of partnership

AS ENERGITM company manufactures and supplies power semiconductors to more than 50 countries around the world.

Geography

Logistics and Delivery

We deliver our products all over the world with the services of logistics companies: DHL, TNT, UPS, EMS, Fedex, Aramex.
Products can be delivered by any means of transport: air, sea, rail and road.

Logistics

AS ENERGITM Semiconductors Manufacturing

Our products range includes rectifier diodes, phase control thyristors in disc and stud design, avalanche diodes and thyristors, fast switching, high frequency thyristors, fast recovery, welding and rotor diodes, triacs, bridge rectifiers, power modules (thyristor, diode, thyristor-diode, IGBT), and air and water heatsinks to them.

Power diodes and thyristors are produced for currents from 10A to 15000A, voltage range from 100V to 9000V.
Power diode and thyristor modules are produced from 25A and up to 1250A, voltage range 400V - 4400V.
The range of power semiconductors also includes equivalent, replacement, analogue and alternative semiconductor devices of global manufacturers.


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