Thyristor module MT3-1250-8-D
|Average forward current, ITAV/IFAV||1250A|
|Voltage, VRRM/VDRM||100 – 800V|
|Voltage code, VRRM / 100||1 – 8|
Power thyristor module MT3-1250-8-D AS ENERGITM in an international standard package, 1250A 800V.
Used to convert DC and AC currents up to 1250 ampere, with a frequency of up to 500 Hz on circuits with voltages up to 800 volt (8 class).
Thyristor modules MT3-1250-8-D are in a standard package D: base dimensions 77x150 mm, housing height – 84 mm, weight – 4.1 kg. Two-position module is a monolithic construction of two semiconductor thyristors: type thyristor-thyristor. Module connection diagram MT3-1250-8-D – half-bridge.
Series (ratings) of thyristor modules: MT3-1250-1-D (1250A 100V), MT3-1250-2-D (1250A 200V), MT3-1250-3-D (1250A 300V), MT3-1250-4-D (1250A 400V), MT3-1250-5-D (1250A 500V), MT3-1250-6-D (1250A 600V), MT3-1250-7-D (1250A 700V), MT3-1250-8-D (1250A 800V).
- Main terminals are at the top of the case and are numbered 1, 2, 3;
- Control terminals are marked on the diagram as G1, G2;
- Additional cathodes are marked on the diagram as K1, K2;
High thermal cyclic resistance and reliable operation of low-frequency thyristor modules MT3-1250-8-D when switching high currents is achieved due to their design features and stable parameters of galvanic isolation.
The MT3-1250-8-D thyristor modules have a clamp-on design that provides easy mounting and good contact with the cooler for heat dissipation. Several modules can be mounted on one cooler without additional insulation, which significantly reduces the overall dimensions of the assembly. Between the module and the heat sink (heat sink) it is recommended to use a thermally conductive substrate lubricated with thermal paste.
Our modules are offered in several dual and single device topologies for almost all phase control or rectifier applications.
Our company provides a quality guarantee for thyristor / diode modules of 2 years from the date of purchase. When supplying thyristor / diode modules, if necessary, we provide technical passport and certificate of conformity.
The final price for thyristor / diode modules depends on the class, quantity, delivery terms, manufacturer, country of origin and form of payment.
General specifications of thyristor-thyristor module :
|Thyristor module specifications||MT3-1250-8-D|
|Maximum allowable average forward current (Case temperature)||IT(AV) (TC)||1250 А (77ºC)
1140 А (85ºC)
|Repetitive pulsed reverse voltage; Repetitive pulsed closed state voltage||VRRM/VDRM||800 V|
|Surge on-state current||ITSM||34.0 kA|
|Peak on-state voltage||VTM||1.30 V|
|Peak on-state current||ITM||3925 A|
|Threshold voltage||VT(TO)||0.80 V|
|On-state slope resistance||rT||0.120 mΩ|
|Turn-off time||tq||160 µs|
|Junction temperature||Tj max||125 ºC|
|Maximum case operating temperature||Tc max||125 ºC|
|Thermal resistance, junction to case||Rth(j-c)||0.0500 ºC/W|
|Electrical insulation strength||VISOL||3.00 kV|
|Design (switches)||-||dual component|
|Type (circuit diagram)||-||thyristor-thyristor|
|Dimensions, mm||L×B×H||150x77x84 mm|
Part numbering guide for thyristor–thyristor modules MT3-1250-8-D:
|MT||–||Thyristor module, AS ENERGITM|
3 – half-bridge;
4 – common cathode circuit;
5 – common anode circuit.
|1250||–||Rated current IF(AV), A.|
|8||–||Voltage class VRRM / 100 (Nominal voltage – 800 V).|
|A2||–||Parameter of the critical rate of rise of off-state voltage (dVD/dt)cr:
|T2||–||Parameter of turn-off time tq:
|N||–||Ambient conditions: N – Normal.|
Dimensions of power thyristor modules MT3-1250-8-D:
Thyristor module connection diagram MT3-1250-8-D:
1, 2, 3 – main terminals.
Why choose AS ENERGITM
- Own production facilities, including semiconductor silicon chips production
- European brand - 100% quality, favorable price, short production terms
- Over 20 years of experience in the semiconductor industry
- Clients from more than 50 countries trust us
- 20000 items in the product line for currents from 10A to 15000A, voltages from 100V to 9000V
- We produce analogues of other manufacturers' products
- Guaranteed certified quality, warranty period of operation - 2 years
Our products are certified and correspond to international standards.
Our company provides a quality guarantee for products of 2 years.
We provide certificates of conformity, reliability reports, data sheets and technical passports at the request of the customer.
Each product is tested for the main parameters, and Test reports of the parameters for each product are provided.
Geography of partnership
AS ENERGITM company manufactures and supplies power semiconductors to more than 50 countries around the world.
Logistics and Delivery
We deliver our products all over the world with the services of logistics companies: DHL, TNT, UPS, EMS, Fedex, Aramex.
Products can be delivered by any means of transport: air, sea, rail and road.
AS ENERGITM Semiconductors Manufacturing
Our products range includes rectifier diodes, phase control thyristors in disc and stud design, avalanche diodes and thyristors, fast switching, high frequency thyristors, fast recovery, welding and rotor diodes, triacs, bridge rectifiers, power modules (thyristor, diode, thyristor-diode, IGBT), and air and water heatsinks to them.
Power diodes and thyristors are produced for currents from 10A to 15000A, voltage range from 100V to 9000V.
Power diode and thyristor modules are produced from 25A and up to 1250A, voltage range 400V - 4400V.
The range of power semiconductors also includes equivalent, replacement, analogue and alternative semiconductor devices of global manufacturers.