Single Thyristor Module TZ800N12KOF (800A 1200V) Infineon Replacement

Infineon Part Number TZ800N12KOF
Average on-state current, IT(AV)M 800А
Voltage, VRRM 1200V
Package TP70A
Dimensions L×B×H 104x70x90
Datasheet Datasheet
Replacement AS ENERGITM AMTZ800N12KOF
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Single Thyristor Module AMTZ800N12KOF AS ENERGITM is a replacement, analogue, alternative and equivalent for thyristor module TZ800N12KOF Infineon Technologies. Average forward current ITAV800 ampere, repetitive peak reverse voltage VRRM1200V.

The thyristor modules are characterized by high electrical and thermal cycling capability, meaning high reliability and long lifetime in intensive operation modes. The thyristor modules are housed in a industry-standard housing making it easy to integrate the device into existing equipment.

Single thyristor modules are used in various power equipment - power and control units, power regulators, AC regulators, DC motors control, AC motor soft starters, converters, controllers of blast furnaces or chemical processes, welding equipment, and as rectifiers for AC converters.

Our modules are offered in several dual and single device topologies for almost all phase control or rectifier applications.

The technical specifications and parameters of TZ800N12KOF and replacement AMTZ800N12KOF, datasheet PDF, outline drawing and dimensions are listed below.

Our company provides a quality guarantee for thyristor modules of 2 years from the date of purchase. When supplying thyristor modules, if necessary, we provide technical passport and certificate of conformity.

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The final price for thyristor modules depends on the class, quantity, delivery terms, manufacturer, country of origin and form of payment.

General specifications of Single Thyristor Module TZ800N12KOF Infineon and Replacement:

Single Thyristor module specifications TZ800N12KOF
Maximum allowable average on-state current (Case temperature) ITAV 800 A
Repetitive pulsed reverse voltage; Repetitive pulsed closed state voltage VRRM/VDRM 1200 V
Surge on-state current ITSM 30000 A
Safety factor I2t 4500 kA2·s
Threshold voltage VT(TO) 0,82 V
On-state slope resistance rT 0,17 mΩ
Junction temperature Tvj max 125 ºC
Thermal resistance, junction to case Rth(j-c) 0,042 K/W
Design (switches) - single component
Weight W 1950 g
Package
Dimensions, mm
L×B×H TP70A
104x70x90
Replacement AS ENERGITM type AMTZ800N12KOF
Datasheet PDF Datasheet

Part Numbering Guide for Single Thyristor Module TZ800N12KOF Infineon and Replacement:

A M TZ 800 N 12 K O F
A brand AS ENERGITM
M Product group: Module.
TZ Circuit topology: Single Thyristor.
800 Average on-state current IT(AV), Amp.
N Phase control device.
12 Voltage class VRRM / 100.
K Mechanical construction:
K – pressure contact technology
S – solder technology
O Turn off time tq: no guaranteed.
F Critical rise of off-state dv/dt class: F = 1000 V/μs

Dimensions of Single Thyristor Module TZ800N12KOF and Replacement AMTZ800N12KOF:

dimensions

Single Thyristor Module


Circuit diagram of Single Thyristor Module TZ800N12KOF and Replacement AMTZ800N12KOF:

circuit

High Power Semiconductors by AS ENERGI

The company manufactures a wide range of power semiconductors (thyristors, diodes, modules).
You can buy thyristor modules from us in any volumes, and when ordering large lots, the price will be lower.
We have earned the trust of customers and supply products all over the world.

For questions regarding the acquisition of Power Modules, Diodes, Thyristors, send an email request to:

[email protected]

And we will provide you a commercial offer for delivery.
For a large number, we will provide an individual price!!!

We are open to manufacture products at our production facilities
according to your requests and technical task.


Photo Gallery

The photo gallery shows many different semiconductor devices, semiconductor chips and SCRs produced by AS ENERGITM, examples of test reports.


icon Why choose AS ENERGITM

  • Own production facilities, including semiconductor silicon chips production
  • European brand - 100% quality, favorable price, short production terms
  • Over 20 years of experience in the semiconductor industry
  • Clients from more than 50 countries trust us
  • 20000 items in the product line for currents from 10A to 15000A, voltages from 100V to 9000V
  • We produce analogues of other manufacturers' products
  • Guaranteed certified quality, warranty period of operation - 2 years

 

Quality Warranty

Our products are certified and correspond to international standards.
Our company provides a quality guarantee for products of 2 years.
We provide certificates of conformity, reliability reports, data sheets and technical passports at the request of the customer.

Certificates

Each product is tested for the main parameters, and Test reports of the parameters for each product are provided.

Test Report

Geography of partnership

AS ENERGITM company manufactures and supplies power semiconductors to more than 50 countries around the world.

Geography

Logistics and Delivery

We deliver our products all over the world with the services of logistics companies: DHL, TNT, UPS, EMS, Fedex, Aramex.
Products can be delivered by any means of transport: air, sea, rail and road.

Logistics

AS ENERGITM Semiconductors Manufacturing

Our products range includes rectifier diodes, phase control thyristors in disc and stud design, avalanche diodes and thyristors, fast switching, high frequency thyristors, fast recovery, welding and rotor diodes, triacs, bridge rectifiers, power modules (thyristor, diode, thyristor-diode, IGBT), and air and water heatsinks to them.

Power diodes and thyristors are produced for currents from 10A to 15000A, voltage range from 100V to 9000V.
Power diode and thyristor modules are produced from 25A and up to 1250A, voltage range 400V - 4400V.
The range of power semiconductors also includes equivalent, replacement, analogue and alternative semiconductor devices of global manufacturers.


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