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Pavlo GorkunMCC650-24IO7 Dual Thyristor Module (646A 2400V) IXYS Replacement
| IXYS Part Number | MCC650-24IO7 |
| Average forward current, IT(AV) | 646A |
| Voltage, VRRM | 2400V |
| Package Dimensions L×B×H |
W88 180x77x84 mm |
| Datasheet |  |
| Replacement AS ENERGITM | ASMCC650-24-IO7 |
| Add to Cart | on request
|
Dual Thyristor Module ASMCC650-24-IO7 AS ENERGITM is a replacement, analogue, alternative and for discrete semiconductor thyristor module MCC650-24IO7 IXYS, also known as Littelfuse or Westcode.
Average forward current ITAV – 646 ampere, repetitive peak reverse voltage VRRM – 2400V. The two-position thyristor-thyristor module MCC650-24IO7 have a half-bridge switching circuit (common cathode-anode).
The thyristor modules are characterized by high electrical and thermal cycling capability, meaning high reliability and long lifetime in intensive operation modes, low current leakage and forward voltage drop. The diode modules are housed in a industry-standard housing making it easy to integrate the device into existing equipment.
Dual thyristor modules are used in various power equipment - power and control units, for single and three phase bridge configurations, power regulators, AC regulators, DC motors control, AC motor soft starters, converters, controllers of blast furnaces or chemical processes, welding equipment, for AC converters.
Our modules are offered in several dual and single device topologies for almost all phase control or rectifier applications.
Our company provides a quality guarantee for dual thyristor modules of 2 years from the date of purchase. When supplying dual diode modules, if necessary, we provide technical passport and certificate of conformity.
The final price for dual thyristor modules depends on the class, quantity, delivery terms, manufacturer, country of origin and form of payment.
General specifications of Dual Thyristor Module MCC650-24IO7 IXYS and Replacement:
| Thyristor module specifications | MCC650-24IO7 | |
| Maximum allowable average forward current (Case temperature) | ITAV | 646 A |
| Repetitive pulsed reverse voltage | VRRM | 2400 V |
| Surge current | IFSM | 22100 A |
| Maximum RMS on-state current | IF(RMS) | 1542 A |
| Safety factor | I2t | 2440 kA2·s |
| Threshold voltage | VT(TO) | 0.874 V |
| RMS current | IRMS | - |
| Slope resistance | rT | 0.227 mΩ |
| Turn-off time | tq | 320 μs |
| Gate trigger voltage | VGT | 2.5 V |
| Gate trigger current | IGT | 250 mA |
| Thermal resistance, junction to case | Rth(JC) | 0.050 K/W |
| Thermal resistance case to heatsink | Rth(CH) | 0.016 K/W |
| Design (switches) | - | dual component |
| Type (circuit diagram) | - | thyristor-thyristor |
| Weight | W | 3500 g |
| Package Dimensions, mm |
L×B×H | W88 180x77x84 mm |
| Mounting torque | MD | 9-18 Nm |
| Replacement AS ENERGITM | type | ASMCC650-24-IO7 |
| Datasheet | |
|
Part Numbering Guide for Dual Thyristor Module ASMCC650-24-IO7:
| AS | M | CC | 650 | – | 24 | – | I | O | 7 |
| AS | – |  AS ENERGITM |
| M | – | Product group: Discrete Semiconductor Module. |
| CC | – | Circuit topology: two thyristors half-bridge (cathode-anode). |
| 650 | – | Average Current Rating ITAV, A. |
| 24 | – | Voltage code x 100 = VRRM. |
| I | – | Critical dv/dt 1000 V/μs. |
| O | – | Typical turn-off time. |
| 7 | – | Version part number. |
Dimensions of dual thyristor module MCC650-24IO7 and Replacement ASMCC650-24-IO7:
W88
High Power Semiconductors by AS ENERGI
The company manufactures a wide range of power semiconductors (thyristors, diodes, modules).
You can buy thyristor modules from us in any volumes, and when ordering large lots, the price will be lower.
We have earned the trust of customers and supply products all over the world.
For questions regarding the acquisition of Power Modules, Diodes, Thyristors, send an email request to:
And we will provide you a commercial offer for delivery.
For a large number, we will provide an individual price!!!
We are open to manufacture products at our production facilities
according to your requests and technical task.
Photo Gallery
The photo gallery shows many different semiconductor devices, semiconductor chips and SCRs produced by AS ENERGITM, examples of test reports.
Why choose AS ENERGITM
- Own production facilities, including semiconductor silicon chips production
- European brand - 100% quality, favorable price, short production terms
- Over 20 years of experience in the semiconductor industry
- Clients from more than 50 countries trust us
- 20000 items in the product line for currents from 10A to 15000A, voltages from 100V to 9000V
- We produce analogues of other manufacturers' products
- Guaranteed certified quality, warranty period of operation - 2 years
Quality Warranty
Our products are certified and correspond to international standards.
Our company provides a quality guarantee for products of 2 years.
We provide certificates of conformity, reliability reports, data sheets and technical passports at the request of the customer.
Each product is tested for the main parameters, and Test reports of the parameters for each product are provided.
Geography of partnership
AS ENERGITM company manufactures and supplies power semiconductors to more than 50 countries around the world.
Logistics and Delivery
We deliver our products all over the world with the services of logistics companies: DHL, TNT, UPS, EMS, Fedex, Aramex.
Products can be delivered by any means of transport: air, sea, rail and road.
AS ENERGITM Semiconductors Manufacturing
Our products range includes rectifier diodes, phase control thyristors in disc and stud design, avalanche diodes and thyristors, fast switching, high frequency thyristors, fast recovery, welding and rotor diodes, triacs, bridge rectifiers, power modules (thyristor, diode, thyristor-diode, IGBT), and air and water heatsinks to them.
Power diodes and thyristors are produced for currents from 10A to 15000A, voltage range from 100V to 9000V.
Power diode and thyristor modules are produced from 25A and up to 1250A, voltage range 400V - 4400V.
The range of power semiconductors also includes equivalent, replacement, analogue and alternative semiconductor devices of global manufacturers.
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