alseryabPower Thyristor Diode Module AMKH 132-12E (132A 1200V)
| Average forward current, ITAV/IFAV (Tcase) | 137A (85ºC) |
| Voltage, VRRM/VDRM | 1200V |
| Circuit |  |
| AMKH 132-12E | on request
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| Weight | 165 g |
| Package, Dimensions L×B×H | Package 2 94x34x30 |
| Datasheet |  |
Thyristor Diode SCR Module AMKH 132-12E AS ENERGITM in an international standard package, 132A 1200V.
The thyristor diode modules are characterized by high electrical and thermal cycling capability, meaning high reliability and long lifetime in intensive operation modes. The thyristor diode modules are housed in a industry-standard housing making it easy to integrate the device into existing equipment.
The main (power) terminals are on the top of the case and are marked as 1, 2, 3 (common anode-cathode, cathode, anode). The control terminals are marked as K1, G1.
Thyristor Diode modules AMKH series are used in various power equipment - power and control units, power regulators, AC regulators, DC motors control, AC motor soft starters, converters, controllers of blast furnaces or chemical processes, welding equipment, and as rectifiers for AC converters.
Our modules are offered in several dual and single device topologies for almost all phase control or rectifier applications.
Our company provides a quality guarantee for thyristor diode modules of 2 years from the date of purchase. When supplying thyristor diode modules, if necessary, we provide technical passport and certificate of conformity.
The final price for thyristor diode modules depends on the class, quantity, delivery terms, manufacturer, country of origin and form of payment.
General specifications of Thyristor Diode Module AMKH 132-12E:
| Thyristor Diode module specifications | AMKH 132-12E | |
| Maximum allowable average forward current (Case temperature) | ITAV/IFAV (Tcase) | 137 A (85ºC) |
| Repetitive pulsed reverse voltage; Repetitive pulsed closed state voltage | VRRM/VDRM | 1200 V |
| Surge on-state current | ITSM/IFSM | 4000 A |
| Safety factor | I2t | 80 kA2·s |
| Threshold voltage | VT(TO) | 1.00 V |
| On-state slope resistance | rT | 1.6 mΩ |
| Turn-off time max | tq | 150 µs |
| Junction temperature | Tvj max | 125 ºC |
| Thermal resistance, junction to case | Rth(j-c) | 0.21 ºC/W |
| Design (switches) | - | dual component |
| Type (circuit diagram) | - | thyristor-diode |
| Weight | W | 165 g |
| Package, Dimensions, mm | L×B×H | Package 2 94x34x30 |
| Datasheet | |
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Part numbering guide for thyristor diode modules AMKH:
| A | M | KH | 132 | – | 12 | E |
| A | – |  AS ENERGITM |
| M | – | Semiconductor Type: Module. |
| KH | – | Topology of internal connection: Thyristor Diode. |
| 132 | – | Rated current (ITAV), A. |
| 12 | – | Voltage class (VRRM/100). |
| E | – | dv/dt class: D: 500 V/µs E: 1000 V/µs G: 2000 V/µs |
Possible alternatives, replacements, analogue, equivalent products:
List of series of power thyristor diode modules with similar parameters and housing sizes.
| Series | ITAV/IFAV (Tcase) | VRRM/VDRM | Topology | Dimensions, mm | Package | Datasheet |
| AMKH 132-12E | 137 A (85ºC) | 1200 V | thyristor-diode | 94x34x30 | 2 | |
| SKKH 132/12E | 137 A (85ºC) | 1200 V | thyristor-diode | 94x34x30 | 2 | |
| MTD-125-12 | 125 A (86ºC) | 1200 V | thyristor-diode | 94x34x32 | 2 | |
Dimensions of Thyristor Diode Module AMKH 132-12E:
Package 2
Circuit diagram of thyristor diode modules AMKH:
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1 (АК), 2 (К), 3 (А) – main (power) terminals. 4 (K1), 5 (G1) – control terminals. |
Thyristor Diode Module AMKH 132-12E datasheet:
Download datasheet for Thyristor Diode Module AMKH 132-12E
High Power Semiconductors by AS ENERGI
The company manufactures a wide range of power semiconductors (thyristors, diodes, modules).
You can buy thyristor diode modules from us in any volumes, and when ordering large lots, the price will be lower.
We have earned the trust of customers and supply products all over the world.
For questions regarding the acquisition of Power Modules, Diodes, Thyristors, send an email request to:
And we will provide you a commercial offer for delivery.
For a large number, we will provide an individual price!!!
We are open to manufacture products at our production facilities
according to your requests and technical task.
Why choose AS ENERGITM
- Own production facilities, including semiconductor silicon chips production
- European brand - 100% quality, favorable price, short production terms
- Over 20 years of experience in the semiconductor industry
- Clients from more than 50 countries trust us
- 10000 items in the product line for currents from 10A to 15000A, voltages from 100V to 9000V
- We produce analogues of other manufacturers' products
- Guaranteed certified quality, warranty period of operation - 2 years
Quality Warranty
Our products are certified and correspond to international standards.
Our company provides a quality guarantee for products of 2 years.
We provide certificates of conformity, reliability reports, data sheets and technical passports at the request of the customer.
Each product is tested for the main parameters, and Test reports of the parameters for each product are provided.
Geography of partnership
AS ENERGITM company manufactures and supplies power semiconductors to more than 50 countries around the world.
Logistics and Delivery
We deliver our products all over the world with the services of logistics companies: DHL, TNT, UPS, EMS, Fedex, Aramex.
Products can be delivered by any means of transport: air, sea, rail and road.
AS ENERGITM Semiconductors Manufacturing
Our products range includes rectifier diodes, phase control thyristors in disc and stud design, avalanche diodes and thyristors, fast switching, high frequency thyristors, fast recovery, welding and rotor diodes, triacs, bridge rectifiers, power modules (thyristor, diode, thyristor-diode, IGBT), and air and water heatsinks to them.
Power diodes and thyristors are produced for currents from 10A to 15000A, voltage range from 100V to 9000V.
Power diode and thyristor modules are produced from 25A and up to 1250A, voltage range 400V - 4400V.
The range of power semiconductors also includes equivalent, replacement, analogue and alternative semiconductor devices of global manufacturers.
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