Rectifier Diode D343-1250 (1000 – 1800V)
|Average forward current, IFAV||1250A|
|Voltage code, VRRM / 100||10 – 18|
Rectifier Diode D343-1250 AS ENERGITM is general purpose disc diode. This is a power p-n junction diode designed for converting DC and AC currents up to 1250A with frequency up to 500Hz in circuits with voltages up to 1000V – 1800V (voltage class from 10 to 18). Diode dimensions ØDxØdxH – 60x37x27 mm (outer case diameter X contact surface diameter X case height), weight – 280 g.
The anode and cathode of the diode (polarity) are determined by the symbol on the case. Diodes are in a industry-standard ceramic press pack disc (capsule, tablet) housing. This rectifier diode can be an alternative product, replacement, analog, equivalent for other types diodes 1100A, 1150A, 1200A, 1250 amp in a disk type package.
For cooling during the operation of power semiconductor diodes they are mounted with coolers (heat sinks). Depending on the amount of heat generated and the working conditions of the semiconductors, either natural air flow cooling or forced cooling can be used.
When assembling, the necessary clamping force Fm specific for each type of diode case (indicated in the parameter table) must be provided.
Semiconductor diodes disc type are used in power equipment – power and control units, power regulators, converters (e.g. melting furnaces), controllers where fast switching and control of currents is necessary.
Specifications and parameters, datasheets PDF, sample technical passport, dimensions, outline drawings, case diagrams diodes, recommended coolers are listed below.
Our company provides a quality guarantee for power rectifier diode of 2 years from the date of purchase. When supplying diodes, if necessary, we provide technical passport, certificate of conformity.
Diode ratings: D343-1250-10 (1250A 1000V), D343-1250-12 (1250A 1200V), D343-1250-14 (1250A 1400V), D343-1250-16 (1250A 1600V), D343-1250-18 (1250A 1800V).
The final price for rectifier disc diodes depends on the voltage class, quantity, delivery terms, manufacturer, country of origin and form of payment.
General specifications of rectifier diodes D343-1250:
|Maximum allowable average forward current (Case temperature)||IF(AV) (Tcase)||1250 A (114ºC)
1415 A (100ºC)
|Repetitive peak reverse voltage||VRRM||1000-1800 V|
|RMS forward current||IFRMS||1963 A|
|Surge non-repetitive current||IFSM||20.0 kA|
|Safety factor||I2t||2000 kA2·s|
|Peak forward voltage, max||VFM||1.65 V|
|Peak current||IFM||3925 A|
|On-state threshold voltage, max||VF(TO)||0.95 V|
|On-state slope resistance, max||rT||0.25 mΩ|
|Repetitive peak reverse currents, max||IRRM||70 mA|
|Temperature of p-n junction, max||Tvj max||190 ºC|
|Thermal resistance, junction to case, max||Rth(j-c)||0.036 ºC/W|
|Clamping force||Fm||15 kN|
|Weight, approx.||W||280 g|
|Package type, Dimensions||ØDxØdxH||PD43 (D.C3)
|Recommended heatsinks||Heatsinks||O143, O243, O343, OM103, OM104|
Part Numbering Guide for Rectifier Diode D343-1250:
|D||–||Diode, AS ENERGITM|
|343||–||Diode type (disc type).|
|1250||–||Average forvard current in open state IF(AV), Amp.|
|18||–||Voltage class VRRM / 100 (Nominal voltage – 1800 V).|
Diode D343-1250 datasheet:
High Power Semiconductors AS ENERGITM
Our company is engaged in the manufacturer and sale of wide range of power semiconductors (power thyristors, modules, rectifier diodes, rotor and welding diodes, triacs etc.) currents up to 15000A and voltages to 9000V, and air and water heatsinks to them. You can buy semiconductors in any volumes, and when ordering large lots, the price will be lower.
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Heat sinks for power disc diodes:
Heat sinks (radiators) are used for single- and double-sided cooling of power semiconductor devices in disc design.
Heat sinks of coolers are made of aluminum radiator profiles and do not require additional protective coating when used in various climatic conditions.
Photo of Power Rectifier Disc Type Diodes: