Rectifier Diode 1000A, type D243-1000 (2000V – 2600V)
|Average forward current, IFAV||1000A|
|Voltage code, VRRM / 100||20 – 26|
Rectifier Diode D243-1000 AS ENERGITM is general purpose disc diode. This is a power p-n junction diode designed for converting DC and AC currents up to 1000A with frequency up to 500Hz in circuits with voltages up to 2000V – 2600V (voltage class from 20 to 26). Diode dimensions ØDxØdxH – 60x37x20 mm (outer case diameter X contact surface diameter X case height), weight – 240 g.
The anode and cathode of the diode (polarity) are determined by the symbol on the case. Diodes are in a industry-standard ceramic press pack disc (capsule, tablet) housing. This rectifier diode can be an alternative product, replacement, analog, equivalent for other types diodes 850A, 900A, 950A, 990A, 1000 amp in a disk type package.
For cooling during the operation of power semiconductor diodes they are mounted with coolers (heat sinks). Depending on the amount of heat generated and the working conditions of the semiconductors, either natural air flow cooling or forced cooling can be used.
When assembling, the necessary clamping force Fm specific for each type of diode case (indicated in the parameter table) must be provided.
Semiconductor diodes disc type are used in power equipment – power and control units, power regulators, converters (e.g. melting furnaces), controllers where fast switching and control of currents is necessary.
Specifications and parameters, datasheets PDF, sample technical passport, dimensions, outline drawings, case diagrams diodes, recommended coolers are listed below.
Our company provides a quality guarantee for power rectifier diode of 2 years from the date of purchase. When supplying diodes, if necessary, we provide technical passport, certificate of conformity.
Diode ratings: D243-1000-20 (1000A 2000V), D243-1000-22 (1000A 2200V), D243-1000-24 (1000A 2400V), D243-1000-26 (1000A 2600V).
The final price for rectifier disc diodes depends on the voltage class, quantity, delivery terms, manufacturer, country of origin and form of payment.
General specifications of rectifier diodes D243-1000:
|Maximum allowable average forward current (Case temperature)||IF(AV) (Tcase)||1000 A (122ºC)
1280 A (100ºC)
|Repetitive peak reverse voltage||VRRM||2000-2600 V|
|RMS forward current||IFRMS||1570 A|
|Surge non-repetitive current||IFSM||19.0 kA|
|Safety factor||I2t||1805 kA2·s|
|Peak forward voltage, max||VFM||1.65 V|
|Peak current||IFM||3140 A|
|On-state threshold voltage, max||VF(TO)||0.95 V|
|On-state slope resistance, max||rT||0.280 mΩ|
|Repetitive peak reverse currents, max||IRRM||70 mA|
|Temperature of p-n junction, max||Tvj max||175 ºC|
|Thermal resistance, junction to case, max||Rth(j-c)||0.032 ºC/W|
|Clamping force||Fm||15 kN|
|Weight, approx.||W||240 g|
|Package type, Dimensions||ØDxØdxH||PD42
|Recommended heatsinks||Heatsinks||O143, O243, O343, OM103, OM104|
Part Numbering Guide for Rectifier Diode D243-1000:
|D||–||Diode, AS ENERGITM|
|243||–||Diode type (disc type).|
|1000||–||Average forvard current in open state IF(AV), Amp.|
|26||–||Voltage class VRRM / 100 (Nominal voltage – 2600 V).|
Diode D243-1000 datasheet:
High Power Semiconductors AS ENERGITM
Our company is engaged in the manufacturer and sale of wide range of power semiconductors (power thyristors, modules, rectifier diodes, rotor and welding diodes, triacs etc.) currents up to 15000A and voltages to 9000V, and air and water heatsinks to them. You can buy semiconductors in any volumes, and when ordering large lots, the price will be lower.
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For questions regarding the acquisition of Power Thyristors, Diodes, Modules send an email request to:
And we will provide you a commercial offer for delivery.
For a large number, we will provide an individual price!!!
We are open to manufacture products at our production facilities
according to your requests and technical task.
Heat sinks for power disc diodes:
Heat sinks (radiators) are used for single- and double-sided cooling of power semiconductor devices in disc design.
Heat sinks of coolers are made of aluminum radiator profiles and do not require additional protective coating when used in various climatic conditions.
Photo of Power Rectifier Disc Type Diodes:
Why choose AS ENERGITM
- Own production facilities, including semiconductor silicon chips production
- European brand - 100% quality, favorable price, short production terms
- Over 20 years of experience in the semiconductor industry
- Clients from more than 50 countries trust us
- 10000 items in the product line for currents from 10A to 15000A, voltages from 100V to 9000V
- We produce analogues of other manufacturers' products
- Guaranteed certified quality, warranty period of operation - 2 years
Our products are certified and correspond to international standards.
Our company provides a quality guarantee for products of 2 years.
We provide certificates of conformity, reliability reports, data sheets and technical passports at the request of the customer.
Each product is tested for the main parameters, and Test reports of the parameters for each product are provided.
Geography of partnership
AS ENERGITM company supplies power semiconductors and other equipment to more than 50 countries around the world.
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We deliver our products all over the world with the services of logistics companies: DHL, TNT, UPS, EMS, Fedex, Aramex.
Products can be delivered by any means of transport: air, sea, rail and road.
AS ENERGITM Semiconductors Manufacturing
Our products range includes rectifier diodes, phase control thyristors in disc and stud design, avalanche diodes and thyristors, fast switching, high frequency thyristors, fast recovery, welding and rotor diodes, triacs, bridge rectifiers, power modules (thyristor, diode, thyristor-diode, IGBT), and air and water heatsinks to them.
Power diodes and thyristors are produced for currents from 10A to 15000A, voltage range from 100V to 9000V.
Power diode and thyristor modules are produced from 25A and up to 1250A, voltage range 400V - 4400V.
The range of power semiconductors also includes equivalent, replacement, analogue and alternative semiconductor devices of global manufacturers.