Triac TC131-50-12 (TS131-50-12) – Stud Symmetrical Thyristor, 50A 1200V

RMS on-state current, IT(RMS)M (TC) 50A (85ºC)
Voltage, VDRM/VRRM 1200 V
TC131-50-12 on request
Stud thread M8
Package ST3F
Weight 37 g

Stud Triac TC131-50-12AS ENERGITM is general purpose stud (flexible lead) triac, also known as TS131-50-12. RMS on-state current IT(RMS)M50 ampere, repetitive peak forward and reverse blocking voltage VDRM/VRRM1200V. Stud triac are designed to convert and control DC and AC currents. "Air-cooled heatsinks O series for stud devices" for triac thyristor cooling are also available to order.

Triacs, also known as Symmetrical Thyristors, can pass current in both directions. If a positive pulse is applied to the control circuit, only the positive half of the sinusoidal current (1 quadrant) will pass through the triac. If a negative opener current is applied to the control circuit, the triac will pass a sinusoidal current through the main circuit (3 and 4 quadrants).

Air heat sinks are used to cool the symmetrical thyristors. To provide reliable thermal and electrical contact with the heatsink a tightening torque Md must be observed during assembly. For better heat dissipation of thyristor during assembly, heat conducting paste is used (this is a recommendation and is not a prerequisite for installation).

Features: thyristors are supplied in stud with flexible lead design. Pin assignment: flexible power lead - main lead 1 (conditional cathode), triac base - main lead 2 (conditional anode), flexible wire leaving base of main lead 2 - additional main lead 2 (auxiliary cathode), flexible wire leaving housing - control electrode. Triacs TC131-50-12 (TS131-50-12) (50A 1200V) are used in DC and AC power circuits of electrical installations and in semiconductor power converters.

Triacs AS ENERGITM have the following features: low static and dynamic losses, wide values of VDRM/VRRM, extensive experience of using the devices in various industries, range of voltages from 100 to 9000 V and amperages from 10 to 15000 A, high resistance to thermal and electric cycling, natural or forced air cooling.

The technical specifications and parameters of triacs TC131-50-12 (TS131-50-12), datasheet PDF, outline drawing and dimensions are listed below.

Our company provides a quality guarantee for triacs of 2 years from the date of purchase. When supplying thyristors, if necessary, we provide technical passport and certificate of conformity.

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The final price for stud thyristors depends on the voltage class, quantity, delivery terms, manufacturer, country of origin and form of payment.

General specifications of Stud (Flexible Lead) Triac TC131-50-12 (TS131-50-12) (50A 1200V):

Stud Triac specifications TC131-50-12
RMS on-state current (Case temperature) IT(RMS)M (TC) 50 A (85ºC)
Repetitive pulsed closed state voltage; repetitive pulsed reverse voltage VDRM/VRRM 1200 V
Surge on-state current ITSM 0.45 kA
On-state threshold voltage VT(TO) 1.0 V
On-state slope resistance rT 12 mΩ
Repetitive peak off-state IDRM 5 mA
Critical rate of rise of off-state voltage (dVD/dt)cr 1-50 V/µs
Critical rate of rise of on-state current (diT/dt)cr 63 A/µs
Gate trigger direct current IGT 200 mA
Gate trigger direct voltage VGT 3.0 V
Temperature of p-n junction Tvj max 125 ºC
Thermal resistance, junction to case Rth(j-c) 0.52 ºC/W
Controllability quadrants 1, 3, 4
Weight W 37 g
Recommended heatsinks Heatsinks O231, O331
Package (Housing) type ST3F
Stud thread - M8
Datasheet PDF

Part Numbering Guide for Stud Triac:

TC 131 - 50 - 12
TC Triac, Thyristor Symmetrical (alternative marking "TS") brand AS ENERGITM
131 Triac type (stud type).
50 RMS on-state current IT(RMS)M, Amp.
12 Voltage class VRRM / 100 (Nominal voltage – 400 V).

Polarity (anode, cathode, gate) and dimensions of stud triac TC131-50-12:

Polarity TC131-50-12 Dimensions TC131-50-12

High Power Semiconductors AS ENERGITM

Our company is engaged in the manufacturer and sale of wide range of power semiconductors (power thyristors, modules, rectifier diodes, avalanche, rotor and welding diodes, triacs etc.) currents up to 15000A and voltages to 9000V, and air and water heatsinks to them.
You can buy semiconductor devices in any volumes, and when ordering large lots, the price will be lower. We have earned the trust of customers and supply products all over the world.

For questions regarding the acquisition of Power Thyristors, Diodes, Modules send an email request to:

[email protected]

And we will provide you a commercial offer for delivery.
For a large number, we will provide an individual price!!!

We are open to manufacture products at our production facilities
according to your requests and technical task.

Photo Gallery

The photo gallery shows many different semiconductor devices, semiconductor chips and SCRs produced by AS ENERGITM, examples of test reports.

Heat sinks for power stud thyristors:

Heat sinks (radiators) are used for cooling of power semiconductor devices in stud design.

Heat sinks of coolers are made of aluminum radiator profiles and do not require additional protective coating when used in various climatic conditions.

See for more information about heatsinks: "Air-cooled heatsinks for stud devices".

Tips and recommendations for power thyristors:

The power thyristors should not be operated for long periods of time at their limit load for all parameters. In this case, the safety factor is determined by the required degree of reliability of the device.

Replace a failed power thyristor with a thyristor that matches the parameters of the one being replaced.

Supercooling must be provided when operating in an environment with an elevated ambient temperature.

Periodic cleaning of power thyristors and coolers to remove dust and contaminants is recommended to ensure proper heat dissipation.

Inductive current dividers (often twisted toroidal wire) should be used to equalize currents between power thyristors connected in parallel. The most popular connection methods are closed circuit, common coil circuit, or power thyristor. The efficiency of current dividers in this case is determined by the cross section of the magnetic wire.

Prevention of voltage unbalance when power thyristors are connected in series is achieved by using shunt resistors connected in parallel with each thyristor. Voltage equalization in transient conditions is provided by connecting capacitors in parallel to each thyristor.

Device under voltage

It is strictly forbidden to touch power thyristors under high voltage during operation.

icon Why choose AS ENERGITM

  • Own production facilities, including semiconductor silicon chips production
  • European brand - 100% quality, favorable price, short production terms
  • Over 20 years of experience in the semiconductor industry
  • Clients from more than 50 countries trust us
  • 20000 items in the product line for currents from 10A to 15000A, voltages from 100V to 9000V
  • We produce analogues of other manufacturers' products
  • Guaranteed certified quality, warranty period of operation - 2 years


Quality Warranty

Our products are certified and correspond to international standards.
Our company provides a quality guarantee for products of 2 years.
We provide certificates of conformity, reliability reports, data sheets and technical passports at the request of the customer.


Each product is tested for the main parameters, and Test reports of the parameters for each product are provided.

Test Report

Geography of partnership

AS ENERGITM company manufactures and supplies power semiconductors to more than 50 countries around the world.


Logistics and Delivery

We deliver our products all over the world with the services of logistics companies: DHL, TNT, UPS, EMS, Fedex, Aramex.
Products can be delivered by any means of transport: air, sea, rail and road.


AS ENERGITM Semiconductors Manufacturing

Our products range includes rectifier diodes, phase control thyristors in disc and stud design, avalanche diodes and thyristors, fast switching, high frequency thyristors, fast recovery, welding and rotor diodes, triacs, bridge rectifiers, power modules (thyristor, diode, thyristor-diode, IGBT), and air and water heatsinks to them.

Power diodes and thyristors are produced for currents from 10A to 15000A, voltage range from 100V to 9000V.
Power diode and thyristor modules are produced from 25A and up to 1250A, voltage range 400V - 4400V.
The range of power semiconductors also includes equivalent, replacement, analogue and alternative semiconductor devices of global manufacturers.

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