Fast Thyristor VS-ST223C08CFN1 Vishay Replacement

Vishay Part Number VS-ST223C08CFN1
Average on-state current, IT(AV)M (TC) 390A (55ºC)
Voltage, VDRM/VRRM 800 V
Dimensions ØDxØdxH 42x19x14 mm
Datasheet
Replacement AS ENERGITM ASTD223C08CFN1
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Fast thyristor ASTD223C08CFN1 AS ENERGITM is a replacement, analogue, alternative and equivalent semiconductor device for inverter grade thyristor VS-ST223C08CFN1 Vishay Semiconductors.

Average forward on-state current ITAV390 ampere, repetitive peak forward and reverse blocking voltage VDRM/VRRM800V. Fast turn-off thyristor are designed to convert and control DC and AC currents. "Air-cooled heatsinks O series for disc devices", "Air heatsink SF series", "Water heatsink SS series" for thyristor cooling are also available to order.

Fast discrete thyristors are devices with reduced tq, trr, Qrr values and with a higher value (diT/dt)crit (up to 2500 A/µs) designed to operate at higher frequencies modes. Inverter grade thyristors are characterized with a very low turn-off time that sets them apart from the standard models. They are used in inverters, choppers, induction heating and melting, electric transportation, AC drives, UPS, and other systems requiring short turn-on and turn-off times. The thyristors have an industry-standard ceramic sealed housing isolating the functional part and the semiconductor element from mechanical impacts and environment.

Features: press pack standard ceramic housing; designed for high power industrial and power transmission applications; optimized for low on-state voltage drop; matched Qrr and VT values available for series and / or parallel connections. The anode and cathode of the thyristor (polarity) are determined by the symbol on the case.

Thyristors AS ENERGITM have the following features: low static and dynamic losses, high values of VDRM/VRRM, extensive experience of using the devices in various industries, range of voltages from 100 to 9000 V and amperages from 100 to 15000 A, high resistance to thermal and electric cycling, natural or forced air cooling.

Specifications and parameters, datasheet PDF, dimensions, drawings are listed below.

Our company provides a quality guarantee for thyristors of 2 years from the date of purchase. When supplying thyristors, if necessary, we provide technical passport and certificate of conformity.

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The final price for fast disc thyristors depends on the voltage class, quantity, delivery terms, manufacturer, country of origin and form of payment.

General specifications of Fast Discrete Thyristors Vishay and Replacements:

Fast Thyristors specifications VS-ST223C08CFN1
Maximum allowable average forward current (Case temperature) IT(AV)M (TC) 390 A (55ºC)
Repetitive pulsed closed state voltage; repetitive pulsed reverse voltage VDRM/VRRM 800 V
Surge on-state current ITSM 5850 A
Safety factor I2t 171 kA2·s
Threshold voltage VT0 1.09 V
On-state slope resistance rT 0.82 mΩ
Peak on-state voltage VTM 1.58 V
Peak on-state current ITM 600 A
RMS on-state current ITRMS 745 A
Turn-off time, max tq 10-30 µs
Temperature of p-n junction Tvj max 125 ºC
Thermal resistance, junction to case Rth(j-c) 0.017 K/W
Clamping force Fm ± 10 % 4.9 kN
Weight W 50 g
Package (Housing) type A-PUK
(TO-200AB)
Dimensions ØDxØdxH 42x19x14 mm
Replacement AS ENERGITM type ASTD223C08CFN1
Datasheet PDF

Part Numbering Guide for Fast Discrete Thyristors:

AS TD 22 3 C 08 C F N 1
AS brand AS ENERGITM
TD Product group: Discrete Disk Thyristor.
22 Essential part number.
3 Fast turn-off thyristor.
C Ceramic PUK.
08 Voltage class VRRM / 100.
C Housing (package) type: A-PUK (TO-200AB).
F Parameter of the critical rate of rise of off-state voltage (dVD/dt)crit:
Letter coding C D E F H
Value, V/µs 20 50 100 200 400
N Parameter of turn-off time tq:
Letter coding N M L P K J H
Value, µs 10 12 15 18 20 25 30
1 Fast-on terminals (gate and auxiliary cathode unsoldered leads).

Polarity (anode, cathode, gate) of power disc thyristors:

Thyristor polarity Disc thyristors

High Power Semiconductors AS ENERGITM

Our company is engaged in the manufacturer and sale of wide range of power semiconductors (power thyristors, modules, rectifier diodes, avalanche, rotor and welding diodes, triacs etc.) currents up to 15000A and voltages to 9000V, and air and water heatsinks to them.
You can buy semiconductor devices in any volumes, and when ordering large lots, the price will be lower. We have earned the trust of customers and supply products all over the world.

For questions regarding the acquisition of Power Thyristors, Diodes, Modules send an email request to:

[email protected]

And we will provide you a commercial offer for delivery.
For a large number, we will provide an individual price!!!

We are open to manufacture products at our production facilities
according to your requests and technical task.


Photo Gallery

The photo gallery shows many different semiconductor devices, semiconductor chips and SCRs produced by AS ENERGITM, examples of test reports.


Heat sinks for power disc thyristors:

Heat sinks (radiators) are used for single- and double-sided cooling of power semiconductor devices in disc design.

Heat sinks of coolers are made of aluminum radiator profiles and do not require additional protective coating when used in various climatic conditions.

Air and water heat sinks for thyristor cooling are also available to order.

See for more information about heatsinks: "Air-cooled heatsinks O series for disc devices", "Air heatsink SF series", "Water heatsink SS series".


Photo of Fast Discrete Thyristor SCR:


icon Why choose AS ENERGITM

  • Own production facilities, including semiconductor silicon chips production
  • European brand - 100% quality, favorable price, short production terms
  • Over 20 years of experience in the semiconductor industry
  • Clients from more than 50 countries trust us
  • 20000 items in the product line for currents from 10A to 15000A, voltages from 100V to 9000V
  • We produce analogues of other manufacturers' products
  • Guaranteed certified quality, warranty period of operation - 2 years

 

Quality Warranty

Our products are certified and correspond to international standards.
Our company provides a quality guarantee for products of 2 years.
We provide certificates of conformity, reliability reports, data sheets and technical passports at the request of the customer.

Certificates

Each product is tested for the main parameters, and Test reports of the parameters for each product are provided.

Test Report

Geography of partnership

AS ENERGITM company manufactures and supplies power semiconductors to more than 50 countries around the world.

Geography

Logistics and Delivery

We deliver our products all over the world with the services of logistics companies: DHL, TNT, UPS, EMS, Fedex, Aramex.
Products can be delivered by any means of transport: air, sea, rail and road.

Logistics

AS ENERGITM Semiconductors Manufacturing

Our products range includes rectifier diodes, phase control thyristors in disc and stud design, avalanche diodes and thyristors, fast switching, high frequency thyristors, fast recovery, welding and rotor diodes, triacs, bridge rectifiers, power modules (thyristor, diode, thyristor-diode, IGBT), and air and water heatsinks to them.

Power diodes and thyristors are produced for currents from 10A to 15000A, voltage range from 100V to 9000V.
Power diode and thyristor modules are produced from 25A and up to 1250A, voltage range 400V - 4400V.
The range of power semiconductors also includes equivalent, replacement, analogue and alternative semiconductor devices of global manufacturers.


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