Thyristor T122-32-10 (32A 1000V)

Average on-state current, IT(AV)M (TC) 32A (85ºC)
Voltage, VDRM/VRRM 1000 V
T122-32-10 on request
Stud thread M6
Package ST2
Weight 11 g

Stud thyristor T122-32-10AS ENERGITM is general purpose stud thyristor, also known as Silicon Controlled Rectifier (SCR). Average forward on-state current ITAV32 ampere, repetitive peak forward and reverse blocking voltage VDRM/VRRM1000V. Stud thyristor are designed to convert and control DC and AC currents. "Air-cooled heatsinks O series for stud devices" for thyristor cooling are also available to order.

Air heat sinks are used to cool the thyristors. To provide reliable thermal and electrical contact with the heatsink a tightening torque Md must be observed during assembly. For better heat dissipation of thyristor during assembly, heat conducting paste is used (this is a recommendation and is not a prerequisite for installation).

Features: thyristors are supplied in stud design. The base of the thyristor is the anode, the hard long lead is the cathode, the hard short lead is the control electrode (gate). Thyristors T122-32-10 (32A 1000V) are used in DC and AC power circuits of electrical installations and in semiconductor power converters.

Thyristors AS ENERGITM have the following features: low static and dynamic losses, wide values of VDRM/VRRM, extensive experience of using the devices in various industries, range of voltages from 100 to 9000 V and amperages from 10 to 15000 A, high resistance to thermal and electric cycling, natural or forced air cooling.

Specifications and parameters, datasheet PDF, dimensions, drawings are listed below.

Our company provides a quality guarantee for thyristors of 2 years from the date of purchase. When supplying thyristors, if necessary, we provide technical passport and certificate of conformity.

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The final price for stud thyristors depends on the voltage class, quantity, delivery terms, manufacturer, country of origin and form of payment.

General specifications of Stud Thyristor T122-32-10 (32A 1000V):

Stud Thyristor specifications T122-32-10
Maximum allowable average forward current (Case temperature) IT(AV) (TC) 32 A (85ºC)
Repetitive pulsed closed state voltage; repetitive pulsed reverse voltage VDRM/VRRM 1000 V
RMS on-state current ITRMS 50 A
Surge on-state current ITSM 0.45 kA
Safety factor i2t -
Peak on-state voltage VTM 1.80 V
Peak on-state current ITM 100 A
On-state threshold voltage VT(TO) 1.00 V
On-state slope resistance rT 0.008 mΩ
Repetitive peak off-state IDRM 3.0 mA
Critical rate of rise of off-state voltage (dVD/dt)cr 50-1000 V/µs
Critical rate of rise of on-state current (diT/dt)cr 250 A/µs
Gate trigger direct current IGT 100 mA
Gate trigger direct voltage VGT 2.5 V
Turn-off time, max tq 63-250 µs
Temperature of p-n junction Tvj max 125 ºC
Thermal resistance, junction to case Rth(j-c) 0.40 K/W
Weight W 11 g
Package (Housing) type ST2
Stud thread - M6
Datasheet PDF

Part Numbering Guide for Stud Thyristors:

T 122 - 32 - 10 4 3
T Thyristor brand AS ENERGITM
122 Thyristor type (stud type).
32 Average current in open state IT(AV), Amp.
10 Voltage class VRRM / 100 (Nominal voltage – 1000 V).
4 Parameter of the critical rate of rise of off-state voltage (dVD/dt)cr:
Alpha-numeric coding P2 K2 E2 A2 T1 P1 M1
Digital coding 4 5 6 7 8 9
(dVD/dt)cr, V/µs 200 320 500 1000 1600 2000 2500
3 Parameter of turn-off time tq:
Alpha-numeric coding 0 B2 C2 E2 H2 K2 M2 P2 T2 X2 A3
Digital coding 0 1 2 3 4
tq, µs not standardized 800 630 500 400 320 250 200 160 125 100

Dimensions of thyristor T122-32-10:


Package ST2

High Power Semiconductors AS ENERGITM

Our company is engaged in the manufacturer and sale of wide range of power semiconductors (power thyristors, modules, rectifier diodes, avalanche, rotor and welding diodes, triacs etc.) currents up to 15000A and voltages to 9000V, and air and water heatsinks to them.
You can buy semiconductor devices in any volumes, and when ordering large lots, the price will be lower. We have earned the trust of customers and supply products all over the world.

For questions regarding the acquisition of Power Thyristors, Diodes, Modules send an email request to:

[email protected]

And we will provide you a commercial offer for delivery.
For a large number, we will provide an individual price!!!

We are open to manufacture products at our production facilities
according to your requests and technical task.

Installation recommendations for stud mount thyristors:

Assembling stud thyristor with a heatsink

The reliability of heat transfer and electrical contact between the mating surfaces of the thyristor and the cooler over the entire temperature range is ensured by appropriate torque.

Before assembly you should perform visual inspection (1) contact surfaces for mechanical damages and wipe (2), soaked with alcohol (toluene, gasoline, acetone).

To improve the parameters of heat transfer it is recommended to lubricate (3) a thin layer of silicone thermal conductive paste before the assembly, which is not a mandatory condition for installation.

After installation, the fasteners (nuts and washers) must be additionally secured against corrosion.

Tips and recommendations for power thyristors:

The power thyristors should not be operated for long periods of time at their limit load for all parameters. In this case, the safety factor is determined by the required degree of reliability of the device.

Replace a failed power thyristor with a thyristor that matches the parameters of the one being replaced.

Supercooling must be provided when operating in an environment with an elevated ambient temperature.

Periodic cleaning of power thyristors and coolers to remove dust and contaminants is recommended to ensure proper heat dissipation.

Inductive current dividers (often twisted toroidal wire) should be used to equalize currents between power thyristors connected in parallel. The most popular connection methods are closed circuit, common coil circuit, or power thyristor. The efficiency of current dividers in this case is determined by the cross section of the magnetic wire.

Prevention of voltage unbalance when power thyristors are connected in series is achieved by using shunt resistors connected in parallel with each thyristor. Voltage equalization in transient conditions is provided by connecting capacitors in parallel to each thyristor.

Device under voltage

It is strictly forbidden to touch power thyristors under high voltage during operation.

icon Why choose AS ENERGITM

  • Own production facilities, including semiconductor silicon chips production
  • European brand - 100% quality, favorable price, short production terms
  • Over 20 years of experience in the semiconductor industry
  • Clients from more than 50 countries trust us
  • 20000 items in the product line for currents from 10A to 15000A, voltages from 100V to 9000V
  • We produce analogues of other manufacturers' products
  • Guaranteed certified quality, warranty period of operation - 2 years


Quality Warranty

Our products are certified and correspond to international standards.
Our company provides a quality guarantee for products of 2 years.
We provide certificates of conformity, reliability reports, data sheets and technical passports at the request of the customer.


Each product is tested for the main parameters, and Test reports of the parameters for each product are provided.

Test Report

Geography of partnership

AS ENERGITM company manufactures and supplies power semiconductors to more than 50 countries around the world.


Logistics and Delivery

We deliver our products all over the world with the services of logistics companies: DHL, TNT, UPS, EMS, Fedex, Aramex.
Products can be delivered by any means of transport: air, sea, rail and road.


AS ENERGITM Semiconductors Manufacturing

Our products range includes rectifier diodes, phase control thyristors in disc and stud design, avalanche diodes and thyristors, fast switching, high frequency thyristors, fast recovery, welding and rotor diodes, triacs, bridge rectifiers, power modules (thyristor, diode, thyristor-diode, IGBT), and air and water heatsinks to them.

Power diodes and thyristors are produced for currents from 10A to 15000A, voltage range from 100V to 9000V.
Power diode and thyristor modules are produced from 25A and up to 1250A, voltage range 400V - 4400V.
The range of power semiconductors also includes equivalent, replacement, analogue and alternative semiconductor devices of global manufacturers.

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