Phase Control Thyristor T640N18TOF Infineon Replacement

Infineon Part Number T640N18TOF
Average on-state current, IT(AV)M (TC) 644А (85ºC)
Voltage, VDRM/VRRM 1800 V
Dimensions ØDxØdxH 48x30x14.5 mm
Datasheet
Replacement AS ENERGITM ATD640N18TOF
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Phase control thyristor ATD640N18TOF AS ENERGITM is a replacement, analogue, alternative and equivalent semiconductor device for SCR thyristor T640N18TOF Infineon Technologies, Eupec.

Average forward on-state current ITAV640 ampere, repetitive peak forward and reverse blocking voltage VDRM/VRRM1800V. Phase control thyristor are designed to convert and control DC and AC currents. Water and Air Heatsinks for thyristor cooling are also available to order.

Features: press pack standard ceramic housing; designed for high power industrial and power transmission applications; optimized for low on-state voltage drop; matched Qrr and VT values available for series and / or parallel connections. The anode and cathode of the thyristor (polarity) are determined by the symbol on the case.

Thyristors AS ENERGITM have the following features: low static and dynamic losses, high values of VDRM/VRRM, extensive experience of using the devices in various industries, range of voltages from 100 to 9000 V and amperages from 100 to 15000 A, high resistance to thermal and electric cycling, natural or forced air cooling.

Specifications and parameters, datasheet PDF, dimensions, drawings are listed below.

Our company provides a quality guarantee for thyristors of 2 years from the date of purchase. When supplying thyristors, if necessary, we provide technical passport and certificate of conformity.

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The final price for phase control disc thyristors depends on the voltage class, quantity, delivery terms, manufacturer, country of origin and form of payment.

General specifications of Phase Control Thyristor Infineon and Replacements:

Thyristors specifications T640N18TOF
Maximum allowable average forward current (Case temperature) IT(AV)M (TC) 644 A (85ºC)
Repetitive pulsed closed state voltage; repetitive pulsed reverse voltage VDRM/VRRM 1800 V
Surge on-state current ITSM 8000 A
Safety factor I2t 320 kA2·s
Threshold voltage VT0 0.80 V
On-state slope resistance rT 0.500 mΩ
Temperature of p-n junction Tvj max 125 ºC
Thermal resistance, junction to case Rth(j-c) 39.0 K/kW
Clamping force Fm 6 - 12 kN
Weight W 0.11 kg
Package (Housing) type T48.14K0
Dimensions ØDxØdxH 48x30x14.5 mm
Replacement AS ENERGITM type ATD640N18TOF
Datasheet PDF

Part Numbering Guide for Phase Control Thyristors:

A TD 640 N 18 T O F
A brand AS ENERGITM
TD Product group: Thyristor Disc.
640 Average on-state current IT(AV), Amp.
N Phase control device.
18 Voltage class VRRM / 100.
T Housing (package) type: disc housing.
O Turn off time tq: no guaranteed.
F dv/dt class:
F: 1000 V/μs
H: 2000 V/μs

Polarity (anode, cathode, gate) of power disc thyristors:

Thyristor polarity Disc thyristors

High Power Semiconductors AS ENERGITM

Our company is engaged in the manufacturer and sale of wide range of power semiconductors (power thyristors, modules, rectifier diodes, avalanche, rotor and welding diodes, triacs etc.) currents up to 15000A and voltages to 9000V, and air and water heatsinks to them.
You can buy semiconductor devices in any volumes, and when ordering large lots, the price will be lower. We have earned the trust of customers and supply products all over the world.

For questions regarding the acquisition of Power Thyristors, Diodes, Modules send an email request to:

[email protected]

And we will provide you a commercial offer for delivery.
For a large number, we will provide an individual price!!!

We are open to manufacture products at our production facilities
according to your requests and technical task.


Photo Gallery

The photo gallery shows many different semiconductor devices, semiconductor chips and SCRs produced by AS ENERGITM, examples of test reports.


Heat sinks for power disc thyristors:

Heat sinks (radiators) are used for single- and double-sided cooling of power semiconductor devices in disc design.

Heat sinks of coolers are made of aluminum radiator profiles and do not require additional protective coating when used in various climatic conditions.

Air and water heat sinks for thyristor cooling are also available to order.

See for more information about heatsinks: "Air-cooled heatsinks O series for disc devices", "Air heatsink SF series", "Water heatsink SS series".


Photo of Phase Control Thyristor SCR:


icon Why choose AS ENERGITM

  • Own production facilities, including semiconductor silicon chips production
  • European brand - 100% quality, favorable price, short production terms
  • Over 20 years of experience in the semiconductor industry
  • Clients from more than 50 countries trust us
  • 20000 items in the product line for currents from 10A to 15000A, voltages from 100V to 9000V
  • We produce analogues of other manufacturers' products
  • Guaranteed certified quality, warranty period of operation - 2 years

 

Quality Warranty

Our products are certified and correspond to international standards.
Our company provides a quality guarantee for products of 2 years.
We provide certificates of conformity, reliability reports, data sheets and technical passports at the request of the customer.

Certificates

Each product is tested for the main parameters, and Test reports of the parameters for each product are provided.

Test Report

Geography of partnership

AS ENERGITM company manufactures and supplies power semiconductors to more than 50 countries around the world.

Geography

Logistics and Delivery

We deliver our products all over the world with the services of logistics companies: DHL, TNT, UPS, EMS, Fedex, Aramex.
Products can be delivered by any means of transport: air, sea, rail and road.

Logistics

AS ENERGITM Semiconductors Manufacturing

Our products range includes rectifier diodes, phase control thyristors in disc and stud design, avalanche diodes and thyristors, fast switching, high frequency thyristors, fast recovery, welding and rotor diodes, triacs, bridge rectifiers, power modules (thyristor, diode, thyristor-diode, IGBT), and air and water heatsinks to them.

Power diodes and thyristors are produced for currents from 10A to 15000A, voltage range from 100V to 9000V.
Power diode and thyristor modules are produced from 25A and up to 1250A, voltage range 400V - 4400V.
The range of power semiconductors also includes equivalent, replacement, analogue and alternative semiconductor devices of global manufacturers.


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