Fast Switching Thyristor 630 amp, TFI643-630 (2000 – 2200V)
|Average forward current, ITAV||630A|
|Voltage code, VRRM / 100||20 – 22|
Fast Switching Thyristor TFI643-630 AS ENERGITM in disc design is a press pack type fast switching (pulse) semiconductor device. This fast pulse power thyristor designed for converting and control DC and AC currents up to 630A with frequency up to 10kHz in circuits with voltages up to 2000V – 2200V (voltage class from 20 to 22). Thyristor dimensions ØDxØdxH – 60x38x20 mm (outer case diameter X contact surface diameter X case height), weight – 240 g.
Fast switching thyristors are devices with reduced tq, trr, Qrr values and with a higher value (diT/dt)cr (up to 2500 A/µs) designed to operate at higher frequencies modes (up to 10kHz). Fast thyristors are characterized with a very low turn-off time that sets them apart from the standard models. They are used in welding, induction heating and melting, electric transportation, AC drives, UPS, and other systems requiring short turn-on and turn-off times. The thyristors have an industry-standard ceramic sealed housing isolating the functional part and the semiconductor element from mechanical impacts and environment.
The anode and cathode of the thyristor (polarity) are determined by the symbol on the case. Fast switching thyristors are in a press pack disc (capsule, tablet) housing. This fast thyristor can be an alternative product, replacement, analog, equivalent for other types of fast switching thyristors 550A, 580A, 590A, 600A, 630 amp in a disk package.
For cooling during the operation of power thyristors they are mounted with coolers (heat sinks). Depending on the amount of heat generated and the working conditions of the semiconductors, either natural air flow cooling or forced cooling can be used.
When assembling, the necessary clamping force Fm specific for each type of thyristor case (indicated in the parameter table) must be provided.
Specifications and parameters, datasheets PDF, sample technical passport, dimensions, outline drawings, case diagrams thyristors, recommended coolers are listed below.
Our company provides a quality guarantee for power fast thyristors of 2 years from the date of purchase. When supplying pulse thyristors, if necessary, we provide technical passport, certificate of conformity.
Fast switching thyristor ratings: TFI643-630-20 (630A 2000V), TFI643-630-22 (630A 2200V).
The final price for fast thyristors depends on the voltage class, quantity, delivery terms, manufacturer, country of origin and form of payment.
General specifications of fast switching thyristors TFI643-630:
|Fast switching thyristor specifications||TFI643-630|
|Maximum allowable average forward current (Case temperature)||IT(AV) (Tcase)||537 A (85°C)
630 A (75°C)
|Repetitive peak off-state voltage; Repetitive peak reverse voltage||VDRM/VRRM||2000-2200 V|
|RMS on-state current||ITRMS||989 A|
|Surge on-state current||ITSM||10.5 kA|
|Safety factor||I2t||550 kA2·s|
|Peak on-state voltage, max||VTM||2.50 V|
|Peak on-state current||ITM||1978 A|
|On-state threshold voltage, max||VT(TO)||1.397 V|
|On-state slope resistance, max||rT||0.600 mΩ|
|Turn-off time, max||tq||32-63 µs|
|Repetitive peak off-state and Repetitive peak reverse currents, max||IDRM/IRRM||100 mA|
|Critical rate of rise of off-state voltage, min||(dVD/dt)cr||200-2500 V/µs|
|Gate trigger direct voltage, max||VGT||2.5 V|
|Gate trigger direct current, max||IGT||300 mA|
|Critical rate of rise of on-state current||(diT/dt)cr||2000 A/µs|
|Temperature of p-n junction, max||Tvj max||125 ºC|
|Thermal resistance, junction to case, max||Rth(j-c)||0.034 ºC/W|
|Clamping force||Fm ±10%||15 kN|
|Weight, approx.||W||240 g|
|Package type, Dimensions||ØDxØdxH||T.C2
|Recommended heatsinks||Heatsinks||O143, O243, O343, OM103, OM104|
Part Numbering Guide for Fast Switching Thyristors TFI643-630:
|TFI||–||AS ENERGITM Fast Switching Thyristor (Fast Impulse Thyristor)|
|643||–||Thyristor type (disc type).|
|630||–||Average current in open state IT(AV), Amp.|
|22||–||Voltage class VRRM / 100 (Nominal voltage – 2200 V).|
|7||–||Parameter of the critical rate of rise of off-state voltage (dVD/dt)cr:
|8||–||Parameter of turn-off time tq:
|4||–||Parameter of turn-on time tgt:
Fast switching thyristor TFI643-630 datasheet:
High Power Semiconductors AS ENERGITM
Our company is engaged in the manufacturer and sale of wide range of power semiconductors (power thyristors, modules, rectifier diodes, rotor and welding diodes, triacs etc.) currents up to 15000A and voltages to 9000V, and air and water heatsinks to them. You can buy semiconductors in any volumes, and when ordering large lots, the price will be lower.
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We are open to manufacture products at our production facilities
according to your requests and technical task.
Heat sinks for disc fast power thyristors:
Heat sinks (radiators) are used for single- and double-sided cooling of power semiconductor devices in disc design.
Heat sinks of coolers are made of aluminum radiator profiles and do not require additional protective coating when used in various climatic conditions.
Photo of Fast Switching Thyristor SCR:
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Our company provides a quality guarantee for products of 2 years.
We provide certificates of conformity, reliability reports, data sheets and technical passports at the request of the customer.
Each product is tested for the main parameters, and Test reports of the parameters for each product are provided.
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AS ENERGITM Semiconductors Manufacturing
Our products range includes rectifier diodes, phase control thyristors in disc and stud design, avalanche diodes and thyristors, fast switching, high frequency thyristors, fast recovery, welding and rotor diodes, triacs, bridge rectifiers, power modules (thyristor, diode, thyristor-diode, IGBT), and air and water heatsinks to them.
Power diodes and thyristors are produced for currents from 10A to 15000A, voltage range from 100V to 9000V.
Power diode and thyristor modules are produced from 25A and up to 1250A, voltage range 400V - 4400V.
The range of power semiconductors also includes equivalent, replacement, analogue and alternative semiconductor devices of global manufacturers.