Fast Thyristor 100 amp, TF251-100 (500 – 1400V), Stud Type
|Average forward current, ITAV||100A|
|Voltage code, VRRM / 100||5 – 14|
Fast Thyristor TF251-100 AS ENERGITM in stud is a fast switching semiconductor device, designed for converting and control DC and AC currents up to 100A with frequency up to 10kHz in circuits with voltages up to 500V – 1400V (voltage class from 5 to 14). Thyristor package type – ST5, mounting standard thread M12x1.75, (on request, UNF thread 1/2"-20UNF-2A), weight – 150 g.
Fast thyristors are devices with reduced tq, trr, Qrr values and with a higher value (diT/dt)cr (up to 2500 A/µs) designed to operate at higher frequencies modes (up to 10kHz). The thyristor parameters of VTM, tq, Qrr are interconnected, so a decrease in the value of tq and Qrr leads to an increase in VTM. Fast thyristors are characterized with a very low turn-off time that sets them apart from the standard models. They are used in welding, induction heating and melting, electric transportation, AC drives, UPS, and other systems requiring short turn-on and turn-off times. The thyristors have an industry-standard ceramic sealed housing isolating the functional part and the semiconductor element from mechanical impacts and environment.
Fast thyristors are supplied in stud design. The base of the thyristor is the Anode, the flexible power lead is the Cathode, the flexible wire exiting the base of the power lead is the auxiliary cathode, the flexible wire exiting the case is the control electrode (Gate). This thyristor can be an alternative product, replacement, analog, equivalent for other types fast thyristors 80A, 90A, 100 amp in a stud housing.
Air and water heat sinks are used to cool the thyristors. To provide reliable thermal and electrical contact with the heatsink a tightening torque Md must be observed during assembly. For better heat dissipation of thyristor during assembly, heat conducting paste is used.
Specifications and parameters, datasheets PDF, sample technical passport, dimensions, outline drawings, case diagrams thyristors, recommended coolers are listed below.
Our company provides a quality guarantee for power fast thyristors of 2 years from the date of purchase. When supplying thyristors, if necessary, we provide technical passport, certificate of conformity.
Fast stud thyristor ratings: TF251-100-5 (100A 500V), TF251-100-6 (100A 600V), TF251-100-7 (100A 700V), TF251-100-8 (100A 800V), TF251-100-9 (100A 900V), TF251-100-10 (100A 1000V), TF251-100-12 (100A 1200V), TF251-100-14 (100A 1400V).
The final price for stud fast thyristors depends on the voltage class, quantity, delivery terms, manufacturer, country of origin and form of payment.
General specifications of stud fast thyristors TF251-100:
|Fast thyristor specifications||TF251-100|
|Maximum allowable average forward current (Case temperature)||IT(AV) (Tcase)||100 A (90°C)|
|Repetitive peak off-state voltage; Repetitive peak reverse voltage||VDRM/VRRM||500-1400 V|
|RMS on-state current||ITRMS||157 A|
|Surge on-state current||ITSM||2.0 kA|
|Safety factor||I2t||20.80 kA2·s|
|Peak on-state voltage, max||VTM||1.8 V|
|Peak on-state current||ITM||314 A|
|On-state threshold voltage, max||VT(TO)||1.3 V|
|On-state slope resistance, max||rT||1.5 mΩ|
|Turn-off time, max||tq||20-32 µs|
|Repetitive peak off-state and Repetitive peak reverse currents, max||IDRM/IRRM||20 mA|
|Critical rate of rise of off-state voltage, min||(dVD/dt)cr||500-1000 V/µs|
|Gate trigger direct voltage, max||VGT||2.5 V|
|Gate trigger direct current, max||IGT||200 mA|
|Critical rate of rise of on-state current||(diT/dt)cr||400-1000 A/µs|
|Temperature of p-n junction, max||Tvj max||125 ºC|
|Thermal resistance, junction to case, max||Rth(j-c)||0.210 ºC/W|
|Mounting torque||Md||10-20 N·m|
|Weight, approx.||W||150 g|
|Package type, Thread||Outline||ST5
Part Numbering Guide for Fast Thyristors TF251-100:
|TF||–||Fast Thyristor, AS ENERGITM|
|251||–||Thyristor type (stud type).|
|100||–||Average current in open state IT(AV), Amp.|
|14||–||Voltage class VRRM / 100 (Nominal voltage – 1400 V).|
|7||–||Parameter of the critical rate of rise of off-state voltage (dVD/dt)cr:
|6||–||Parameter of turn-off time tq:
|2||–||Parameter of turn-on time tgt:
Fast thyristor TF251-100 datasheet:
Download pdf datasheet for thyristors TF251-100
High Power Semiconductors AS ENERGITM
Our company is engaged in the manufacturer and sale of wide range of power semiconductors (power thyristors, modules, rectifier diodes, rotor and welding diodes, triacs etc.) currents up to 15000A and voltages to 9000V, and air and water heatsinks to them. You can buy semiconductors in any volumes, and when ordering large lots, the price will be lower.
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Heat sinks for power stud fast thyristors:
Heat sinks (radiators) are used for cooling of power semiconductor devices in stud design.
Heat sinks of coolers are made of aluminum radiator profiles and do not require additional protective coating when used in various climatic conditions.
See for more information about heatsinks: "Air-cooled heatsinks for stud devices".
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Our products are certified and correspond to international standards.
Our company provides a quality guarantee for products of 2 years.
We provide certificates of conformity, reliability reports, data sheets and technical passports at the request of the customer.
Each product is tested for the main parameters, and Test reports of the parameters for each product are provided.
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AS ENERGITM Semiconductors Manufacturing
Our products range includes rectifier diodes, phase control thyristors in disc and stud design, avalanche diodes and thyristors, fast switching, high frequency thyristors, fast recovery, welding and rotor diodes, triacs, bridge rectifiers, power modules (thyristor, diode, thyristor-diode, IGBT), and air and water heatsinks to them.
Power diodes and thyristors are produced for currents from 10A to 15000A, voltage range from 100V to 9000V.
Power diode and thyristor modules are produced from 25A and up to 1250A, voltage range 400V - 4400V.
The range of power semiconductors also includes equivalent, replacement, analogue and alternative semiconductor devices of global manufacturers.
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