Distributed Gate Thyristor R2619ZC25L (R600CH25) IXYS Westcode Replacement

IXYS Westcode Part Number R2619ZC25L
Westcode OLD Part Number R600CH25
Average on-state current, IT(AV)M (TC) 2619A (55ºC)
Voltage, VDRM 2500 V
Turn-off time tq 65 µs
Package, Dimensions ØDxØdxH Package W13
110x73x37 mm
Datasheet
Replacement AS ENERGITM ATDR2619ZC25L
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Distributed Gate Thyristor ATDR2619ZC25L AS ENERGITM is a replacement, analogue, alternative and equivalent semiconductor device for Distributed Gate Thyristor R2619ZC25L IXYS UK Westcode, Littelfuse, OLD Part Number R600CH25 Westcode.

Average on-state current ITAV2619A, repetitive peak forward voltage VDRM2500V, turn-off time tq65 µs.

Features: The distributed gate design and lifetime control features give these devices both high di/dt capability and fast, low recovery turn-off, while maintaining a low on-state voltage drop.

Distributed Gate Thyristors are available with blocking voltages to 4.5kV and average currents in excess of 5.3kA, with tq ratings from 10µs.

Distributed Gate Thyristors are suitable for induction power supplies, high frequency inverters / converters, UPS and pulse power.

"Air-cooled heatsinks O series for disc devices", "Air heatsink SF series", "Water heatsink SS series" for thyristor cooling are also available to order.

Thyristors AS ENERGITM have the following features: low static and dynamic losses, high values of VDRM/VRRM, extensive experience of using the devices in various industries, range of voltages from 100 to 9000 V and amperages from 10 to 15000 A, high resistance to thermal and electric cycling, natural or forced air cooling.

The technical specifications and parameters of R2619ZC25L, R600CH25 and replacement ATDR2619ZC25L, datasheet PDF, outline drawing and dimensions are listed below.

Our company provides a quality guarantee for thyristors of 2 years from the date of purchase. When supplying thyristors, if necessary, we provide technical passport and certificate of conformity.

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The final price for distributed gate thyristors depends on the voltage class, quantity, delivery terms, manufacturer, country of origin and form of payment.

General specifications of Distributed Gate Thyristor IXYS WESTCODE and Replacements:

Thyristors specifications R2619ZC25L
(R600CH25)
Average on-state current (Case temperature) IT(AV)M (TC) 2619 A (55ºC)
Repetitive peak off-state voltage VDRM 2500 V
Repetitive peak reverse voltage VRRM 2500 V
Surge on-state current ITSM 33800 A
Safety factor I2t 5.71x106 A2·s
Turn-off time tq 65 µs
Recovered charge Qrr 1850 µC
Peak on-state current ITM 4000 A
Critical rate of rise of on-state current -di/dt 60 A/µs
Threshold voltage VT0 1.308 V
On-state slope resistance rT 0.173 mΩ
Temperature of p-n junction Tvj max 125 ºC
Thermal resistance, junction to heatsink Rth(j-k) 0.0110 K/W
Clamping force Fm 27 - 47 kN
Weight W 1.7 kg
Package (Housing) type W13
Dimensions ØDxØdxH 110x73x37 mm
Replacement AS ENERGITM type ATDR2619ZC25L
Datasheet PDF

Part Numbering Guide for Distributed Gate Thyristors:

A TDR 2619 ZC 25 L
A brand AS ENERGITM
TDR Product group: Distributed Gate Thyristor (Disc type).
2619 Average on-state current IT(AV), Amp.
ZC Housing (package) type.
25 Off-state voltage code VDRM / 100.
L Turn-off time code tq:
A = 10 μs, B = 12 μs, C = 15 μs, D = 20 μs, E = 25 μs, F = 30 μs,
G = 35 μs, H = 40 μs, J = 50 μs, K = 60 μs, L = 65 μs, M = 70 μs,
N = 100 μs, P = 120 μs, R = 140 μs, S = 160 μs, T = 200 μs, V = 250 μs, W = 300 μs.

Dimensions of Distributed Gate Thyristor R2619ZC25L and Replacement ATDR2619ZC25L:

dimensions

Package W13


Polarity (anode, cathode, gate) of power disc thyristors:

Thyristor polarity Disc thyristors

High Power Semiconductors AS ENERGITM

Our company is engaged in the manufacturer and sale of wide range of power semiconductors (power thyristors, modules, rectifier diodes, avalanche, rotor and welding diodes, triacs etc.) currents up to 15000A and voltages to 9000V, and air and water heatsinks to them.
You can buy semiconductor devices in any volumes, and when ordering large lots, the price will be lower. We have earned the trust of customers and supply products all over the world.

For questions regarding the acquisition of Power Thyristors, Diodes, Modules send an email request to:

[email protected]

And we will provide you a commercial offer for delivery.
For a large number, we will provide an individual price!!!

We are open to manufacture products at our production facilities
according to your requests and technical task.


Photo Gallery

The photo gallery shows many different semiconductor devices, semiconductor chips and SCRs produced by AS ENERGITM, examples of test reports.


Heat sinks for power disc thyristors:

Heat sinks (radiators) are used for single- and double-sided cooling of power semiconductor devices in disc design.

Heat sinks of coolers are made of aluminum radiator profiles and do not require additional protective coating when used in various climatic conditions.

Air and water heat sinks for thyristor cooling are also available to order.

See for more information about heatsinks: "Air-cooled heatsinks O series for disc devices", "Air heatsink SF series", "Water heatsink SS series".


Photo of Phase Control Thyristor SCR:


icon Why choose AS ENERGITM

  • Own production facilities, including semiconductor silicon chips production
  • European brand - 100% quality, favorable price, short production terms
  • Over 20 years of experience in the semiconductor industry
  • Clients from more than 50 countries trust us
  • 20000 items in the product line for currents from 10A to 15000A, voltages from 100V to 9000V
  • We produce analogues of other manufacturers' products
  • Guaranteed certified quality, warranty period of operation - 2 years

 

Quality Warranty

Our products are certified and correspond to international standards.
Our company provides a quality guarantee for products of 2 years.
We provide certificates of conformity, reliability reports, data sheets and technical passports at the request of the customer.

Certificates

Each product is tested for the main parameters, and Test reports of the parameters for each product are provided.

Test Report

Geography of partnership

AS ENERGITM company manufactures and supplies power semiconductors to more than 50 countries around the world.

Geography

Logistics and Delivery

We deliver our products all over the world with the services of logistics companies: DHL, TNT, UPS, EMS, Fedex, Aramex.
Products can be delivered by any means of transport: air, sea, rail and road.

Logistics

AS ENERGITM Semiconductors Manufacturing

Our products range includes rectifier diodes, phase control thyristors in disc and stud design, avalanche diodes and thyristors, fast switching, high frequency thyristors, fast recovery, welding and rotor diodes, triacs, bridge rectifiers, power modules (thyristor, diode, thyristor-diode, IGBT), and air and water heatsinks to them.

Power diodes and thyristors are produced for currents from 10A to 15000A, voltage range from 100V to 9000V.
Power diode and thyristor modules are produced from 25A and up to 1250A, voltage range 400V - 4400V.
The range of power semiconductors also includes equivalent, replacement, analogue and alternative semiconductor devices of global manufacturers.


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