Fast Switching Thyristor 5STF 23H2040 ABB Replacement

ABB Part Number 5STF23H2040
Average on-state current, IT(AV)M (TC) 2322А (70ºC)
Voltage, VDRM/VRRM 2000 V
Dimensions ØDxØdxH 102x63x26 mm
Datasheet
Replacement AS ENERGITM ATF 2300-20-H-40
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Fast Switching Thyristor ATF 2300-20-H-40 AS ENERGITM is a replacement, analogue, alternative and equivalent semiconductor device for thyristor 5STF23H2040, 5STF 23H2040 ABB Power Grids, Hitachi Energy.

Average forward on-state current ITAV2300 ampere, repetitive peak forward and reverse voltage VDRM/VRRM2000V.
Air and water heat sinks for thyristor cooling are also available to order.

Features of a Fast Switching Thyristor: low switching losses; short turn-off time; fast turn-on and increased di/dt capability. The anode and cathode of the thyristor (polarity) are determined by the symbol on the case.

Thyristors AS ENERGITM have the following features: low static and dynamic losses, high values of VDRM/VRRM, extensive experience of using the devices in various industries, range of voltages from 100 to 9000 V and amperages from 100 to 7500 A, high resistance to thermal and electric cycling, natural or forced air cooling.

Specifications and parameters, datasheet PDF, dimensions, drawings are listed below.

Our company provides a quality guarantee for thyristors of 2 years from the date of purchase. When supplying thyristors, if necessary, we provide technical passport and certificate of conformity.

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The final price for fast switching thyristors depends on the voltage class, quantity, delivery terms, manufacturer, country of origin and form of payment.

General specifications of Fast Switching Thyristor 5STF ABB and Replacements:

Thyristors specifications 5STF23H2040
Maximum allowable average forward current (Case temperature) IT(AV)/(TC) 2322 A (70ºC)
Repetitive pulsed closed state voltage; repetitive pulsed reverse voltage VDRM/VRRM 2000 V
Surge on-state current ITSM 42.0 kA
Threshold voltage VT0 1.52 V
On-state slope resistance rT 0.11 mΩ
Turn-off time tq 40 µs
Temperature of p-n junction Tvj max 125 ºC
Thermal resistance, junction to case Rth(j-c) 10.0 K/kW
Thermal resistance, case to heatsink Rth(c-h) 3.0 K/kW
Clamping force Fm ±10% 50 kN
Weight W 0.90 kg
Package (Housing) type H
Dimensions ØDxØdxH 102x63x26 mm
Replacement AS ENERGITM type ATF 2300-20-H-40
Datasheet PDF

Part Numbering Guide for Fast Switching Thyristors:

A TF 2300 20 H 40
A brand AS ENERGITM
TF Product group: Fast Switching Thyristor.
2300 Average on-state current IT(AV), Amp.
20 Voltage class VRRM / 100.
H Housing (package) type.
40 Turn-off time tq:
for devices with tq < 100μs = tq,
for devices with tq > 100μs = tq/10.

Polarity (anode, cathode, gate) of power disc thyristors:

Thyristor polarity Disc thyristors

High Power Semiconductors AS ENERGITM

Our company is engaged in the manufacturer and sale of wide range of power semiconductors (power thyristors, modules, rectifier diodes, avalanche, rotor and welding diodes, triacs etc.) currents up to 15000A and voltages to 9000V, and air and water heatsinks to them.
You can buy semiconductor devices in any volumes, and when ordering large lots, the price will be lower. We have earned the trust of customers and supply products all over the world.

For questions regarding the acquisition of Power Thyristors, Diodes, Modules send an email request to:

[email protected]

And we will provide you a commercial offer for delivery.
For a large number, we will provide an individual price!!!

We are open to manufacture products at our production facilities
according to your requests and technical task.


Heat sinks for power disc thyristors:

Heat sinks (radiators) are used for single- and double-sided cooling of power semiconductor devices in disc design.

Heat sinks of coolers are made of aluminum radiator profiles and do not require additional protective coating when used in various climatic conditions.

Air and water heat sinks for thyristor cooling are also available to order.

See for more information about coolers "Air-heatsink" and "Water-heatsink".


Photo of Fast Switching Thyristors:

 

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