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Pavlo GorkunSingle Diode Module ND89N12K (89A 1200V) Infineon Replacement
Single Rectifier Diode Module AMND89N12K AS ENERGITM is a replacement, analogue, alternative and equivalent semiconductor device for normal recovery diode ND89N12K Infineon Technologies. Average forward current IFAV – 89 ampere, repetitive peak reverse voltage VRRM – 1200V.
Features of Standard Rectifier Diodes: optimised for line frequency; low on-state losses; high reverse voltage and high current handling capabilities; press pack standard ceramic housing; designed for high power industrial and power transmission applications. Their main applications are rectifiers for large AC drives, aluminum smelting and other metal refining as well as trackside supply. Air and water heat sinks for diode cooling are also available to order.
Rectifier Diodes AS ENERGITM have the following features: industry standard housing; low static and dynamic losses, high values of VRRM/VRSM, extensive experience of using the devices in various industries, range of voltages from 100 to 9000 V and amperages from 100 to 7500 A, high resistance to thermal and electric cycling.
The technical specifications and parameters of ND89N12K and replacement AMND89N12K, datasheet PDF, outline drawing and dimensions are listed below.
Our company provides a quality guarantee for single diode modules of 2 years from the date of purchase. When supplying diode modules, if necessary, we provide technical passport and certificate of conformity.
The final price for single diode modules depends on the class, quantity, delivery terms, manufacturer, country of origin and form of payment.
General specifications of Single Rectifier Diode Module ND89N12K Infineon and Replacement:
| Diode Module specifications | ND89N12K | |
| Maximum allowable average forward current | IF(AV)M | 89 A |
| Max. repetitive peak reverse blocking voltage | VRRM | 1200 V |
| Surge peak forward current | IFSM | 2400 A |
| Safety factor | I2t | 28,8 kA2·s |
| Threshold voltage | VT0 | 0,75 V |
| Forward slope resistance | rT | 2,3 mΩ |
| Temperature of p-n junction | Tvj max | 150 ºC |
| Thermal resistance, junction to case | Rth(j-c) | 0,45 K/kW |
| Weight | W | 160 g |
| Package | type | DP20 |
| Dimensions | L×B×H | 92x20x30 |
| Replacement AS ENERGITM | type | AMND89N12K |
| Datasheet |  |
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Part numbering guide for Single Rectifier Diode Module Infineon and Replacement:
| A | M | ND | 89 | N | 12 | K |
| A | – |  AS ENERGITM |
| M | – | Product group: Module. |
| ND | – | Configuration: Single Diode. |
| 89 | – | Average on-state current IF(AV), Amp. |
| N | – | Phase control device. |
| 12 | – | Voltage class VRRM / 100. |
| K | – | Mechanical construction: pressure contact technology |
Dimensions of Single Rectifier Diode Module ND89N12K and Replacement AMND89N12K:
Single Rectifier Diode Module
Circuit diagram of Single Rectifier Diode Module ND89N12K and Replacement AMND89N12K:
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High Power Semiconductors by AS ENERGI
The company manufactures a wide range of power semiconductors (thyristors, diodes, modules).
You can buy diode modules from us in any volumes, and when ordering large lots, the price will be lower.
We have earned the trust of customers and supply products all over the world.
For questions regarding the acquisition of Power Modules, Diodes, Thyristors, send an email request to:
And we will provide you a commercial offer for delivery.
For a large number, we will provide an individual price!!!
We are open to manufacture products at our production facilities
according to your requests and technical task.
Photo Gallery
The photo gallery shows many different semiconductor devices, semiconductor chips and SCRs produced by AS ENERGITM, examples of test reports.
Why choose AS ENERGITM
- Own production facilities, including semiconductor silicon chips production
- European brand - 100% quality, favorable price, short production terms
- Over 20 years of experience in the semiconductor industry
- Clients from more than 50 countries trust us
- 20000 items in the product line for currents from 10A to 15000A, voltages from 100V to 9000V
- We produce analogues of other manufacturers' products
- Guaranteed certified quality, warranty period of operation - 2 years
Quality Warranty
Our products are certified and correspond to international standards.
Our company provides a quality guarantee for products of 2 years.
We provide certificates of conformity, reliability reports, data sheets and technical passports at the request of the customer.
Each product is tested for the main parameters, and Test reports of the parameters for each product are provided.
Geography of partnership
AS ENERGITM company manufactures and supplies power semiconductors to more than 50 countries around the world.
Logistics and Delivery
We deliver our products all over the world with the services of logistics companies: DHL, TNT, UPS, EMS, Fedex, Aramex.
Products can be delivered by any means of transport: air, sea, rail and road.
AS ENERGITM Semiconductors Manufacturing
Our products range includes rectifier diodes, phase control thyristors in disc and stud design, avalanche diodes and thyristors, fast switching, high frequency thyristors, fast recovery, welding and rotor diodes, triacs, bridge rectifiers, power modules (thyristor, diode, thyristor-diode, IGBT), and air and water heatsinks to them.
Power diodes and thyristors are produced for currents from 10A to 15000A, voltage range from 100V to 9000V.
Power diode and thyristor modules are produced from 25A and up to 1250A, voltage range 400V - 4400V.
The range of power semiconductors also includes equivalent, replacement, analogue and alternative semiconductor devices of global manufacturers.
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