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AS ENERGIVBO22-12NO8 - Single Phase Diode Bridge 14A 1200V IXYS Replacement
| IXYS Part Number | VBO22-12NO8 |
| Output direct current, ID (TC) | 14A (85ºC) |
| Voltage, VRRM | 1200V |
| Dimensions LxBxH | 28.5x24x22 mm |
| Datasheet |  |
| Replacement AS ENERGITM | A-VBO22-12NO8 |
| Add to Cart | on request
|
Single Phase Diode Bridge Rectifier A-VBO22-12NO8AS ENERGITM is a replacement, analogue, alternative and equivalent semiconductor device for single phase diode bridges VBO22-12NO8 IXYS. Output direct current ID – 14 ampere, repetitive peak reverse voltage VRRM – 1200V.
An alternating current is fed to the input "~" of the circuit. In each of the half - periods the input current passes only through two diodes. As a result, at the output "+" and "-" we get a current pulsing at twice the frequency of the input current.
Features of Single Phase Diode Bridges: low on-state losses; high reverse voltage and high current handling capabilities; square plastic case with isolated metal base plate and fast-on connectors; easy chassis mounting; high surge current. Their main applications are: rectifier for power supplies; input rectifier for variable frequency drives; rectifier for dc motor field supplies; battery charger rectifiers.
Single Phase Diode Bridges AS ENERGITM have the following features: industry standard housing; low static and dynamic losses, high values of VRRM/VRSM, extensive experience of using the devices in various industries.
The technical specifications and parameters of VBO22-12NO8 and replacement A-VBO22-12NO8, datasheet PDF, outline drawing and dimensions are listed below.
Our company provides a quality guarantee for diode bridges of 2 years from the date of purchase. When supplying diode bridges, if necessary, we provide technical passport and certificate of conformity.
The final price for standard recovery diodes in stud design depends on the voltage class, quantity, delivery terms, manufacturer, country of origin and form of payment.
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Cycle
9001:2015
Tested
Compliant
2 years
Conformity
The final price for single phase diode bridges depends on the voltage class, quantity, delivery terms, manufacturer, country of origin and form of payment.
General specifications of Single Phase Diode Bridges Rectifier IXYS and Replacement:
| Diode Bridge specifications | VBO22-12NO8 | |
| Direct output current (Case temperature) | ID (TC) | 14 A (85ºC) |
| Max. repetitive peak reverse blocking voltage | VRRM | 1200 V |
| Surge peak forward current | IFSM | 380 A |
| Safety factor | I2t | 530 A2·s |
| Threshold voltage | VF(T0) | 0.77 V |
| Forward slope resistance | rF | 14.2 mΩ |
| Temperature of p-n junction | Tvj max | 150 ºC |
| Thermal resistance, junction to case | Rth(j-c) | 8 K/W |
| Thermal resistance, case to heatsink | Rth(c-h) | 1 K/W |
| Mounting torque to heatsink | MD ± 15% | 1.8 - 2.2 Nm |
| Weight | W | 19 g |
| Package (Housing) | type | FO-B |
| Dimensions | LxBxH | 28.5x24x22 mm |
| Replacement AS ENERGITM | type | A-VBO22-12NO8 |
| Datasheet | |
|
Part Numbering Guide for Single Phase Diode Bridge Rectifier:
| A | - | VBO | 22 | - | 12 | NO8 |
| A | – |  AS ENERGITM |
| VBO | – | Product group: Single Phase Diode Bridge Rectifier. |
| 22 | – | Direct output current. |
| 12 | – | Voltage class VRRM x 100. |
| NO8 | – | Part Number. |
Dimensions of diode bridge VBO22-12NO8 and Replacement A-VBO22-12NO8:
FO-B
High Power Semiconductors AS ENERGITM
Our company is engaged in the manufacturer and sale of wide range of power semiconductors (power thyristors, modules, rectifier diodes, avalanche, rotor and welding diodes, triacs etc.) currents up to 15000A and voltages to 9000V, and air and water heatsinks to them.
You can buy semiconductor devices in any volumes, and when ordering large lots, the price will be lower. We have earned the trust of customers and supply products all over the world.
For questions regarding the acquisition of Power Thyristors, Diodes, Modules send an email request to:
And we will provide you a commercial offer for delivery.
For a large number, we will provide an individual price!!!
We are open to manufacture products at our production facilities
according to your requests and technical task.
Why choose AS ENERGITM
- Own production facilities, including semiconductor silicon chips production
- European brand - 100% quality, favorable price, short production terms
- Over 20 years of experience in the semiconductor industry
- Clients from more than 50 countries trust us
- 20000 items in the product line for currents from 10A to 15000A, voltages from 100V to 9000V
- We produce analogues of other manufacturers' products
- Guaranteed certified quality, warranty period of operation - 2 years
Quality Warranty
Our products are certified and correspond to international standards.
Our company provides a quality guarantee for products of 2 years.
We provide certificates of conformity, reliability reports, data sheets and technical passports at the request of the customer.
Each product is tested for the main parameters, and Test reports of the parameters for each product are provided.
Geography of partnership
AS ENERGITM company manufactures and supplies power semiconductors to more than 50 countries around the world.
Logistics and Delivery
We deliver our products all over the world with the services of logistics companies: DHL, TNT, UPS, EMS, Fedex, Aramex.
Products can be delivered by any means of transport: air, sea, rail and road.
AS ENERGITM Semiconductors Manufacturing
Our products range includes rectifier diodes, phase control thyristors in disc and stud design, avalanche diodes and thyristors, fast switching, high frequency thyristors, fast recovery, welding and rotor diodes, triacs, bridge rectifiers, power modules (thyristor, diode, thyristor-diode, IGBT), and air and water heatsinks to them.
Power diodes and thyristors are produced for currents from 10A to 15000A, voltage range from 100V to 9000V.
Power diode and thyristor modules are produced from 25A and up to 1250A, voltage range 400V - 4400V.
The range of power semiconductors also includes equivalent, replacement, analogue and alternative semiconductor devices of global manufacturers.
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