Welding Diodes 5000A - 18000A – Series Overview, Specifications, Datasheets


What is a Welding Diode?

Welding diodes are diodes designed for use in medium and high frequency industrial welding equipment and optimized for high current rectifiers. Since the diode voltage in welding equipment is quite low (200V - 600V), to ensure high power and high current density, semiconductor elements of minimum thickness are used in welding diodes, manufactured using alloying technology. Besides, the low thickness of the welding diodes housing ensures low thermal resistance Rth.

AS ENERGITM manufactures both normal housed welding diodes and housing-less welding diodes. The latter is becoming more and more important in high current welding applications for joining of high refractory materials.

Welding Diodes

Welding diodes product line includes diodes with such parameters: the forward current rating IFAV ranges is 5000A, 6000A, 6300A, 7100A, 9000A, 10000A, 11000A, 12000A, 16000A housing type welding diodes and 7500A, 9500A, 10500A, 12500A, 13500A, 18000A housing-less type welding diodes; range of reverse blocking voltage VRRM is 200V, 400V, 600V.

Welding diodes are available in medium frequency (up to 2 kHz) and high frequency (up to 10 kHz).

Welding diodes show extremely stable on-state behavior over life-time, low static losses and very low thermal resistance, and therefore can also perfectly be used for surge protection applications.

See also articles: Standard Rectifier Diodes, Avalanche Diodes, Phase Control Thyristors (PCT), Fast Thyristors, Fast Switching Thyristors, High Voltage SCR Thyristors 6500V, Power Thyristor Modules.

For questions regarding the acquisition of Rectifier Diodes, SCR Thyristors, Thyristor Diode Modules send an email request to:

[email protected]

And we will provide you a commercial offer for delivery.
For a large number, we will provide an individual price!!!

We are open to manufacture products at our production facilities
according to your requests and technical task.


Series of Welding Diodes:

Welding Diodes D series AS ENERGITM

Welding Diodes D series AS ENERGITM are available with forward current IFAV of 7100A, 9500A, 11500A, 12500A and reverse blocking voltages VRRM of 200V, 400V.

Features of welding diodes: high forward current capability, low forward losses, low thermal resistance, high load cycle capability.

Type IF(AV)M
(Tcase)
VRRM IFRSM IFSM I2t VF(T0) rT Tvj max Rth(j-c) Fm W Outline, Dimensions ØDxØdxH Data sheet
A (°C) V A kA kA2·s V mΩ ºC ºC/W kN kg mm PDF
D053-7100 7100 (90)
7402 (85)
200-400 11147 55 15125 0.75 0.029 170 0.0090 30-36 0.14 61x44x8
D056-9500 9500 (112)
11814 (85)
200-400 14915 70 24500 0.74 0.030 180 0.0050 45-50 0.11 56x50x5
D063-11500 11500 (82)
11300 (85)
200-400 18055 85 36125 0.73 0.026 180 0.0058 60-70 0.22 76x57x8
D066-12500 12500 (106)
14703 (85)
200-400 19625 85 36125 0.72 0.026 180 0.0039 60-70 0.155 65x58x5

Welding Diodes ZP series AS ENERGITM

Welding Diodes ZP series AS ENERGITM are available with forward current IFAV ratings from 4000A to 18000A and reverse blocking voltages VRRM from 200V to 600V.

Type IF(AV)M
(TC=85°C)
VRRM IFSM I2t VF(T0) rT Tvj max Rth(j-c) Rth(c-h) Fm W Package Outline, Dimensions ØDxØdxH
A V kA kA2·s V mΩ ºC ºC/W ºC/W kN kg mm
Housing Welding Diodes
ZP4000-(02...06) 5000 200-600 45 10 0.80 0.030 170 0.010 0.005 20-25 0.14 D1 61x44x8
ZP7100-(02...06) 7100 200-600 55 15 0.75 0.025 170 0.010 0.005 20-25 0.14 D1 61x44x8
ZP12000-(02...06) 11000 200-600 85 36 0.75 0.020 170 0.006 0.003 35-40 0.22 D2 75x57x8
ZP16000-(02...06) 16000 200-600 120 72 0.80 0.019 190 0.004 0.002 50-60 0.55 D3 100x68x12
Housingless Welding Diodes
ZP10500-(02...06) 10500 200-600 70 25 0.80 0.03 170 0.0050 0.0026 30-50 0.11 D18 56x50x5
ZP13500-(02...06) 13500 200-600 85 36 0.75 0.02 170 0.0039 0.0025 35-70 0.15 D19 64x58x5
ZP18000-(02...06) 18000 200-600 120 72 0.80 0.02 190 0.0035 0.0020 70-80 0.20 D20 75x68x5

Welding Diodes ABB Power Grids (Hitachi Energy)

Welding Diodes 5SDD and 5SDF series ABB Power Grids (Hitachi Energy) and its replacements are available in medium frequency (up to 2 kHz) and high frequency (up to 10 kHz). Forward current IFAV ratings from 6300A to 13500A. They all feature very low on-state voltage – VRRM of 200-400V, low static losses and very low thermal resistance.

Welding Diodes Medium Frequency (up to 2 kHz)

Type IF(AV)M
(TC=85°C)
VRRM VFMAX IFSM VF0 rF Tvj max Rth
(j-c)
Rth
(c-h)
Fm
±10%
Package Replacement
AS ENERGITM
Data sheet
A V V kA V mΩ ºC K/kW K/kW kN PDF
5SDD 71X0200 7110 200 1.05* 55 0.74 0.026 170 10.0 5.0 22 X ADD 7100-02-X-00
5SDD 71B0200 7110 200 1.05* 55 0.74 0.026 170 10.0 5.0 22 B ADD 7100-02-B-00
5SDD 71X0400 7110 400 1.00* 55 0.74 0.026 170 10.0 5.0 22 X ADD 7100-04-X-00
5SDD 71B0400 7110 400 1.05* 55 0.74 0.026 170 10.0 5.0 22 B ADD 7100-04-B-00
5SDD 92Z0401 9244 400 1.03** 60 0.78 0.031 180 5.6 3.6 36 Z1 ADD 9200-04-Z-01
5SDD 0105Z0401 10502 400 1.01** 70 0.812 0.026 180 5.0 2.5 40 Z2 ADD 10500-04-Z-01
5SDD 0120C0200 11000 200 0.92** 85 0.75 0.020 170 6.0 3.0 37.5 C ADD 12000-02-C-00
5SDD 0120C0400 11350 400 0.88** 85 0.74 0.018 170 6.0 3.0 37.5 C ADD 12000-04-C-00
5SDD 0135Z0401 13526 400 0.92** 85 0.758 0.021 180 3.9 2.6 52.5 Z3 ADD 13500-04-Z-01

* – at IF=5000A, Tj=25°C
** – at IF=8000A, Tvj max


Welding Diodes High Frequency (up to 10 kHz)

Type IF(AV)M
(TC=85°C)
VRRM VFMAX IFSM VF0 rF Qrr Tvj max Rth
(j-c)
Rth
(c-h)
Fm
±10%
Package Replacement
AS ENERGITM
Data sheet
A V V kA V mΩ μC ºC K/kW K/kW kN PDF
5SDF 63B0400 6266 400 1.14* 44 0.962 0.036 180 190 10.0 5.0 22 B ADF 6300-04-B-00
5SDF 63X0400 6266 400 1.14* 44 0.962 0.036 180 190 10.0 5.0 22 X ADF 6300-04-X-00
5SDF 90Z0401 9041 400 1.13* 48 0.979 0.032 200 190 5.6 3.6 36.0 Z1 ADF 9000-04-Z-01
5SDF 0102C0400 10159 400 1.14** 70 0.977 0.022 300 190 6.0 3.0 37.5 C ADF 10200-04-C-00
5SDF 0103Z0401 10266 400 1.20** 54 0.998 0.027 230 190 5.0 2.5 40.0 Z2 ADF 10300-04-Z-01
5SDF 0131Z0401 13058 400 1.14** 70 0.977 0.022 300 190 3.9 2.6 52.5 Z3 ADF 13100-04-Z-01

* – at IF=5000A, Tvj max
** – at IF=8000A, Tvj max


Welding Diodes Infineon Technologies

Welding Diodes Infineon Technologies is designed with improved losses for medium frequency resistance welding and high current rectifier applications. Forward current IFAV ratings from 5800A to 12800A. They all feature low on-state voltage – VRRM of 600V that delivers an exceptionally high forward current, low static losses and very low thermal resistance.

Type IF(AV)M
(TC=100°C)
VRRM IFSM I2t VT0 rT Tvj max Rth(j-c) Fm Dimensions ØDxØdxH Replacement
AS ENERGITM
Data sheet
A V A kA2·s V mΩ ºC K/kW kN mm PDF
38DN06B02 5800 600 32300 5200 0.74 0.049 180 9.6 15-30 38x34x4 ADW38DN06B02
46DN06B02 7640 600 48000 11520 0.78 0.034 180 7.2 25-45 46x43x4 ADW46DN06B02
56DN06B02 10300 600 70000 24500 0.73 0.024 180 5.8 30-45 56x50x5 ADW56DN06B02
65DN06B02 12810 600 95000 45100 0.76 0.018 180 4.7 40-80 65x58x5 ADW65DN06B02

Welding Diodes Semikron

Welding Diodes SKN6000 and SKN7500/06 Semikron are available with forward current IFAV ratings from 6000A to 7500A and reverse blocking voltages VRRM from 200V to 600V.

Features of welding diodes: capsule type metal-ceramic package with pressure contacts or slim package without external case, medium voltage, high current rectifier diode with slim package for lowest thermal resistance, low power dissipation and low thermal resistance, especially suited for water cooling, forward selections for paralleling available.

Type IF(AV)M
(TC=85°C)
VRRM IFSM I2t VF(T0) rT Tvj max Rth
(j-c)
Fm W Package Replacement
AS ENERGITM
Data sheet
A V kA kA2·s V mΩ ºC K/kW kN kg PDF
SKN 6000/02 6000 200 50 12500 0.70 0.04 180 0.012 24-30 0.13 E35 ADWN 6000-02
SKN 6000/04 6000 400 50 12500 0.70 0.04 180 0.012 24-30 0.13 E35 ADWN 6000-04
SKN 6000/06 6000 600 50 12500 0.70 0.04 180 0.012 24-30 0.13 E35 ADWN 6000-06
SKN 7500/06 7500 600 50 12500 0.70 0.038 180 0.009 24-30 0.08 E28 ADWN 7500-06

Welding Diodes Techsem

Welding Diodes Y50ZPA series Techsem and its replacements are available in hermetic metal-ceramic case with pressure contacts, forward current IFAV is 6360A, reverse blocking voltages VRRM is 200V-400V.

Type IF(AV)M
(Tcase)
VRRM IFSM I2t VF(T0) rF Tvj max Rth
(j-c)
Fm W Outline, Dimensions ØDxØdxH Replacement
AS ENERGITM
Data sheet
A (ºC) V kA kA2·s V mΩ ºC ºC/W kN kg mm PDF
Y50ZPA-63-04 5400 (85)
6360 (55)
200-400 55 15125 0.75 0.052 190 0.0135 19-26 0.14 62x44x8 ADWY50A-63-04

Air-cooled and Water-cooled heat-sinks for disc type rectifier diodes

The operation of semiconductor devices at high currents and high reverse voltages is accompanied by high power in the p-n junction of the silicon chip.

Air and water heat sinks are used for cooling power rectifier diodes.

The heat sink is characterized by the value of power dissipation and the area of the cooling surface and is selected on the basis of the required heat dissipation at the operating power of the diode.

In disk-type rectifier diodes, the necessary compression of the press contacts is provided only if they are assembled with heatsinks.

To keep electrical losses to a minimum and heat dissipation to a maximum, the necessary clamping force Fm must be provided during assembly.

Range of values of axial force on diode Fm, i.e. diode compression force, is from 10 to 100 kN depending on package diameter (housing type) and is specified in datasheet.

Heatsinks are used for disc (tablet type) semiconductors with сontact surface diameter from Ø19 mm to Ø100 mm.

See for more information about heatsinks for disc type rectifier diodes:
"Air-cooled heatsinks O series", "Air heatsink SF series", "Water heatsink SS series".


Installation recommendations for disc type power rectifier diodes:

Assembling a diode with a heatsink

The reliability of heat transfer and electrical contact between the mating surfaces of the diode and the cooler over the entire temperature range is ensured by appropriate torque (clamping force).

Before assembly you should perform visual inspection (1) contact surfaces for mechanical damages and wipe (2), soaked with alcohol (toluene, gasoline, acetone).

After inspection, fix the current contacts (leads), install a pin to fix the alignment of the structure.

To improve the parameters of heat transfer it is recommended to lubricate (3) a thin layer of silicone thermal conductive paste before the assembly, which is not a mandatory condition for installation.

Install the diode (3), the second part of the cooler, the fiberglass insulator and the thrust washer.

To thread the traverse (4) and evenly tighten the nuts. Make sure no misalignment and evenness of the contact surfaces.

When the parts are sufficiently clamped but moveable, we recommend placing the cooler on a flat surface and checking the tolerance for parallelism of the overall adjacent plane of the surfaces (5).

Clamp each nut in turn (about a quarter turn) to the stop (6). The amount of deflection of the traverse determines whether the achieved clamping force corresponds to the required one.

After installation, the fasteners (nuts and washers) must be additionally secured against corrosion.


Tips and recommendations for power diodes:

The power diodes should not be operated for long periods of time at their limit load for all parameters. In this case, the safety factor is determined by the required degree of reliability of the device.

Replace a failed power diode with a diode that matches the parameters of the one being replaced.

Supercooling must be provided when operating in an environment with an elevated ambient temperature.

Periodic cleaning of power diodes and coolers to remove dust and contaminants is recommended to ensure proper heat dissipation.

Inductive current dividers (often twisted toroidal wire) should be used to equalize currents between power diodes connected in parallel. The most popular connection methods are closed circuit, common coil circuit, or power diode. The efficiency of current dividers in this case is determined by the cross section of the magnetic wire.

Prevention of voltage unbalance when power diodes are connected in series is achieved by using shunt resistors connected in parallel with each diode. Voltage equalization in transient conditions is provided by connecting capacitors in parallel to each diode.

It is strictly forbidden to touch power diodes under high voltage during operation.


icon Why choose AS ENERGITM

  • Own production facilities, including semiconductor silicon chips production
  • European brand - 100% quality, favorable price, short production terms
  • Over 20 years of experience in the semiconductor industry
  • Clients from more than 50 countries trust us
  • 20000 items in the product line for currents from 10A to 15000A, voltages from 100V to 9000V
  • We produce analogues of other manufacturers' products
  • Guaranteed certified quality, warranty period of operation - 2 years

 

Quality Warranty

Our products are certified and correspond to international standards.
Our company provides a quality guarantee for products of 2 years.
We provide certificates of conformity, reliability reports, data sheets and technical passports at the request of the customer.

Certificates

Each product is tested for the main parameters, and Test reports of the parameters for each product are provided.

Test Report

Geography of partnership

AS ENERGITM company manufactures and supplies power semiconductors to more than 50 countries around the world.

Geography

Logistics and Delivery

We deliver our products all over the world with the services of logistics companies: DHL, TNT, UPS, EMS, Fedex, Aramex.
Products can be delivered by any means of transport: air, sea, rail and road.

Logistics

AS ENERGITM Semiconductors Manufacturing

Our products range includes rectifier diodes, phase control thyristors in disc and stud design, avalanche diodes and thyristors, fast switching, high frequency thyristors, fast recovery, welding and rotor diodes, triacs, bridge rectifiers, power modules (thyristor, diode, thyristor-diode, IGBT), and air and water heatsinks to them.

Power diodes and thyristors are produced for currents from 10A to 15000A, voltage range from 100V to 9000V.
Power diode and thyristor modules are produced from 25A and up to 1250A, voltage range 400V - 4400V.
The range of power semiconductors also includes equivalent, replacement, analogue and alternative semiconductor devices of global manufacturers.

For questions regarding the acquisition of Rectifier Diodes, SCR Thyristors, Thyristor Diode Modules send an email request to:

[email protected]

And we will provide you a commercial offer for delivery.
For a large number, we will provide an individual price!!!

We are open to manufacture products at our production facilities
according to your requests and technical task.

 

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