Rectifier Diode D66-400-16, Stud Type, Kubara Lamina Replacement
Kubara Lamina Part Number | D66-400-16 |
Average forward current, IF(AV)M (TC) | 400A (110ºC) |
Voltage, VRRM | 1600V |
Stud thread | Ø27.4 |
Datasheet | ![]() |
Replacement AS ENERGITM | ADS66-400-16 |
Add to Cart | on request |
Rectifier Diode ADS66-400-16 AS ENERGITM in stud design, is a replacement, analogue, alternative and equivalent semiconductor device for normal recovery diode D66-400-16 Kubara Lamina.
Average forward current IFAV – 400 ampere, repetitive peak reverse voltage VRRM – 1600V. "Air-cooled heatsinks O series for stud devices" for diode cooling are also available to order.
Air and water heat sinks are used to cool the diodes. To provide reliable thermal and electrical contact with the heatsink a tightening torque Md must be observed during assembly. For better heat dissipation of diode during assembly, heat conducting paste is used (this is a recommendation and is not a prerequisite for installation).
Features of Normal Recovery Diodes: optimised for line frequency; low on-state losses; high reverse voltage and high current handling capabilities; press pack standard ceramic housing; designed for high power industrial and power transmission applications. Their main applications are rectifiers for large AC drives, aluminum smelting and other metal refining as well as trackside supply. Air and water heat sinks for diode cooling are also available to order.
Rectifier Diodes AS ENERGITM have the following features: industry standard housing; low static and dynamic losses, high values of VRRM/VRSM, extensive experience of using the devices in various industries, range of voltages from 100 to 9000 V and amperages from 10 to 15000 A, high resistance to thermal and electric cycling.
The technical specifications and parameters of D66-400-16 and replacement ADS66-400-16, datasheet PDF, outline drawing and dimensions are listed below.
Our company provides a quality guarantee for rectifier diodes of 2 years from the date of purchase. When supplying diodes, if necessary, we provide technical passport and certificate of conformity.
The final price for rectifier diodes in stud design depends on the voltage class, quantity, delivery terms, manufacturer, country of origin and form of payment.
General specifications of Rectifier Diode (Stud Type) Kubara Lamina and Replacement:
Diode specifications | D66-400-16 | |
Maximum allowable average forward current (Case temperature) | IF(AV)M (TC) | 400 A (110ºC) |
Max. repetitive peak reverse blocking voltage | VRRM | 1600 V |
Surge peak forward current | IFSM | 7000 A |
Safety factor | I2t | 245 kA2·s |
Threshold voltage | VF(T0) | 0.62 V |
Forward slope resistance | rT | 0.563 mΩ |
Forward voltage drop max. | VFM | 1.2 V |
Forward on-state current | IFM | 800 A |
Temperature of p-n junction | Tvj | -40...+175 ºC |
Thermal resistance, junction to case | Rth(JC) | 0.12 °C/W |
Thermal resistance, case to heatsink | Rth(CS) | 0.1 °C/W |
Mounting torque | Md | 3.5 kN |
Weight | W | 200 g |
Package (Housing) | type | 11 |
Stud thread | Ød | Ø27.4 |
Replacement AS ENERGITM | type | ADS66-400-16 |
Datasheet | ![]() |
Part Numbering Guide for Rectifier Diode ADS66-400-16:
A | – | DS | 6 | 6 | – | 400 | – | 16 |
A | – | ![]() |
DS | – | Product group: Rectifying Diode (Stud type). |
6 | – | Element size code. |
6 | – | Case type code: 1 – stud base, ceramic housing 2 – stud base, glass-metal housing 3,5 – ceramic, hockey puk case 4 – flat base, ceramic housing 6 – flat base, glass-metal housing |
400 | – | Average current in open state IT(AV), Amp. |
16 | – | Voltage class VRRM / 100. |
High Power Semiconductors AS ENERGITM
Our company is engaged in the manufacturer and sale of wide range of power semiconductors (power diodes, modules, rectifier diodes, avalanche, rotor and welding diodes, triacs etc.) currents up to 15000A and voltages to 9000V, and air and water heatsinks to them.
You can buy semiconductor devices in any volumes, and when ordering large lots, the price will be lower. We have earned the trust of customers and supply products all over the world.
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For a large number, we will provide an individual price!!!
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The photo gallery shows many different semiconductor devices, semiconductor chips and SCRs produced by AS ENERGITM, examples of test reports.
Heat sinks for power stud diodes:
Heat sinks (radiators) are used for cooling of power semiconductor devices in stud design.
Heat sinks of coolers are made of aluminum radiator profiles and do not require additional protective coating when used in various climatic conditions.
See for more information about heatsinks: "Air-cooled heatsinks for stud devices".
Why choose AS ENERGITM
- Own production facilities, including semiconductor silicon chips production
- European brand - 100% quality, favorable price, short production terms
- Over 20 years of experience in the semiconductor industry
- Clients from more than 50 countries trust us
- 20000 items in the product line for currents from 10A to 15000A, voltages from 100V to 9000V
- We produce analogues of other manufacturers' products
- Guaranteed certified quality, warranty period of operation - 2 years
Quality Warranty
Our products are certified and correspond to international standards.
Our company provides a quality guarantee for products of 2 years.
We provide certificates of conformity, reliability reports, data sheets and technical passports at the request of the customer.
Each product is tested for the main parameters, and Test reports of the parameters for each product are provided.
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AS ENERGITM company manufactures and supplies power semiconductors to more than 50 countries around the world.
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We deliver our products all over the world with the services of logistics companies: DHL, TNT, UPS, EMS, Fedex, Aramex.
Products can be delivered by any means of transport: air, sea, rail and road.
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AS ENERGITM Semiconductors Manufacturing
Our products range includes rectifier diodes, phase control thyristors in disc and stud design, avalanche diodes and thyristors, fast switching, high frequency thyristors, fast recovery, welding and rotor diodes, triacs, bridge rectifiers, power modules (thyristor, diode, thyristor-diode, IGBT), and air and water heatsinks to them.
Power diodes and thyristors are produced for currents from 10A to 15000A, voltage range from 100V to 9000V.
Power diode and thyristor modules are produced from 25A and up to 1250A, voltage range 400V - 4400V.
The range of power semiconductors also includes equivalent, replacement, analogue and alternative semiconductor devices of global manufacturers.
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