DE
IT
Pavlo GorkunStud Avalanche Diode 5SDA 06P3836 (DA 805-600-38) ABB Replacement
| ABB Part Number | 5SDA06P3836 |
| Polovodice Part No. | DA 805-600-38 |
| Average forward current, IF(AV)M (TC) | 600А (85ºC) |
| Voltage, VRRM | 3800 V |
| Dimensions ØDxH | 275x54 mm |
| Datasheet |  |
| Replacement AS ENERGITM | ADA 600-38-P-36 |
| Add to Cart | on request
|
Stud Avalanche Diode ADA 600-38-P-36 AS ENERGITM is a replacement, analogue, alternative and equivalent semiconductor device for avalanche rectifier diode 5SDA06P3836, 5SDA 06P3836 ABB Power Grids, Hitachi Energy, Polovodice Part Number DA 805-600-38 ABB. Average forward current IFAV – 600 ampere, repetitive peak reverse voltage VRRM – 3800V.
Features of Avalanche Diodes: low on-state losses; self protected against transient over-voltages; guaranteed maximum avalanche power dissipation. Their main applications are rectifiers for large AC drives, aluminum smelting and other metal refining as well as trackside supply. Air and water heat sinks for diode cooling are also available to order.
Rectifier Diodes AS ENERGITM have the following features: industry standard housing; low static and dynamic losses, high values of VRRM/VRSM, extensive experience of using the devices in various industries, range of voltages from 100 to 9000 V and amperages from 100 to 7500 A, high resistance to thermal and electric cycling.
Specifications and parameters, datasheet PDF, dimensions, drawings are listed below.
Our company provides a quality guarantee for avalanche diodes of 2 years from the date of purchase. When supplying diodes, if necessary, we provide technical passport and certificate of conformity.
The final price for avalanche diodes depends on the voltage class, quantity, delivery terms, manufacturer, country of origin and form of payment.
General specifications of Stud Avalanche Diode ABB (Polovodice OLD Part No.) and Replacement:
| Diode specifications | 5SDA06P3836 (DA 805-600-38) |
|
| Maximum allowable average forward current (Case temperature) | IF(AV)M (TC) | 600 A (85ºC) |
| Max. repetitive peak reverse blocking voltage | VRRM | 3800 V |
| Surge peak forward current | IFSM | 7600 A |
| Threshold voltage | VF0 | 1.010 V |
| Forward slope resistance | rF | 0.720 mΩ |
| Max. surge avalanche power dissipation (single pulse) | PRSM | 50 kW |
| Temperature of p-n junction | Tvj max | 160 ºC |
| Thermal resistance, junction to case | Rth(j-c) | 60 K/kW |
| Thermal resistance, case to heatsink | Rth(c-h) | 30 K/kW |
| Mounting torque | Md | 3.5 ± 0.3 N·m |
| Weight, max | W | 700 g |
| Package (Housing) | type | P with lead |
| Dimensions | ØDxH | 275x54 mm |
| Replacement AS ENERGITM | type | ADA 600-38-P-36 |
| Datasheet | |
|
Part Numbering Guide for Avalanche Rectifier Diodes:
| A | DA | 600 | – | 38 | – | P | – | 36 |
| A | – |  AS ENERGITM |
| DA | – | Product group: Avalanche Diode. |
| 600 | – | Average forward current IF(AV), Amp. |
| 38 | – | Voltage class VRRM / 100. |
| P | – | Housing (package) type. |
| 36 | – | Version number. |
High Power Semiconductors AS ENERGITM
Our company is engaged in the manufacturer and sale of wide range of power semiconductors (power thyristors, modules, rectifier diodes, avalanche, rotor and welding diodes, triacs etc.) currents up to 15000A and voltages to 9000V, and air and water heatsinks to them.
You can buy semiconductor devices in any volumes, and when ordering large lots, the price will be lower. We have earned the trust of customers and supply products all over the world.
For questions regarding the acquisition of Power Thyristors, Diodes, Modules send an email request to:
And we will provide you a commercial offer for delivery.
For a large number, we will provide an individual price!!!
We are open to manufacture products at our production facilities
according to your requests and technical task.
Photo Gallery
The photo gallery shows many different semiconductor devices, semiconductor chips and SCRs produced by AS ENERGITM, examples of test reports.
Why choose AS ENERGITM
- Own production facilities, including semiconductor silicon chips production
- European brand - 100% quality, favorable price, short production terms
- Over 20 years of experience in the semiconductor industry
- Clients from more than 50 countries trust us
- 20000 items in the product line for currents from 10A to 15000A, voltages from 100V to 9000V
- We produce analogues of other manufacturers' products
- Guaranteed certified quality, warranty period of operation - 2 years
Quality Warranty
Our products are certified and correspond to international standards.
Our company provides a quality guarantee for products of 2 years.
We provide certificates of conformity, reliability reports, data sheets and technical passports at the request of the customer.
Each product is tested for the main parameters, and Test reports of the parameters for each product are provided.
Geography of partnership
AS ENERGITM company manufactures and supplies power semiconductors to more than 50 countries around the world.
Logistics and Delivery
We deliver our products all over the world with the services of logistics companies: DHL, TNT, UPS, EMS, Fedex, Aramex.
Products can be delivered by any means of transport: air, sea, rail and road.
AS ENERGITM Semiconductors Manufacturing
Our products range includes rectifier diodes, phase control thyristors in disc and stud design, avalanche diodes and thyristors, fast switching, high frequency thyristors, fast recovery, welding and rotor diodes, triacs, bridge rectifiers, power modules (thyristor, diode, thyristor-diode, IGBT), and air and water heatsinks to them.
Power diodes and thyristors are produced for currents from 10A to 15000A, voltage range from 100V to 9000V.
Power diode and thyristor modules are produced from 25A and up to 1250A, voltage range 400V - 4400V.
The range of power semiconductors also includes equivalent, replacement, analogue and alternative semiconductor devices of global manufacturers.
Featured Products:
