Power Thyristor Module MTC600-10 (600A 1000V), MTC600-10-408F3

Average forward current, ITAV/IFAV (Tcase) 600A (85ºC)
Voltage, VRRM/VDRM 1000V
Voltage code, VRRM / 100 10
MTC600-10 on request
Weight 2300 g
Dimensions L×B×H
Datasheet Datasheet

Dual thyristor SCR module MTC 600-10 AS ENERGITM in an international standard package, 600A 1000V.

The thyristor modules MTC600-10-408F3 are characterized by high electrical and thermal cycling capability, meaning high reliability and long lifetime in intensive operation modes. The thyristor modules are housed in a industry-standard housing making it easy to integrate the device into existing equipment.

The two-position modules have different switching circuits (electrical circuit diagrams): МТChalf-bridge; МТKscheme with common cathode; МТAscheme with common anode.

The main (power) terminals are on the top of the case and are marked as 123 (common anode-cathode, cathode, anode). The control terminals are marked as K1, G1, K2, G2.

Dual thyristor modules MTC series are used in various power equipment - power and control units, power regulators, AC regulators, DC motors control, AC motor soft starters, converters, controllers of blast furnaces or chemical processes, welding equipment, and as rectifiers for AC converters.

Our modules are offered in several dual and single device topologies for almost all phase control or rectifier applications.

Our company provides a quality guarantee for thyristor / diode modules of 2 years from the date of purchase. When supplying thyristor / diode modules, if necessary, we provide technical passport and certificate of conformity.

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The final price for thyristor / diode modules depends on the class, quantity, delivery terms, manufacturer, country of origin and form of payment.

General specifications of thyristor-thyristor module MTC600-10, MTC600-10-408F3:

Thyristor module specifications MTC600-10
Maximum allowable average forward current (Case temperature) ITAV/IFAV (Tcase) 600 A (85ºC)
Repetitive pulsed reverse voltage; Repetitive pulsed closed state voltage VRRM/VDRM 1000 V
Surge on-state current ITSM/IFSM 16 A
Safety factor I2t 1280 kA2·s
Threshold voltage VT(TO) 0.80 V
Critical rate of rise of off-state voltage dv/dt 800 V/µs
Critical rate of rise of on-state current di/dt 100 A/µs
Repetitive pulse current when closed; repetitive pulse return current IDRM/IRRM 45 mA
Gate trigger DC current IGT 200 mA
Gate trigger direct DC voltage VGT 3.0 V
Holding current IH 200 mA
Open pulse voltage VTM 1.45 V
Open pulse current ITM 1800 A
On-state slope resistance rT 0.28 mΩ
Junction temperature Tvj max 125 ºC
Thermal resistance, junction to case Rth(j-c) 0.054 ºC/W
Design (switches) - dual component
Type (circuit diagram) - thyristor-thyristor
Weight W 2300 g
Package (Housing) type 408F3
Dimensions, mm L×B×H 135x76x62
Datasheet PDF Datasheet

Part numbering guide for thyristor–thyristor modules MTC:

MT C 600 10 408F3
MT Thyristor module, brand AS ENERGITM
C Circuit topology: common anode-cathode.
600 Rated current (ITAV), A.
10 Voltage class (VRRM/100).
408F3 Package (housing) type.

Dimensions of thyristor module MTC600-10, MTC600-10-408F3:


Circuit diagram of thyristor modules MTC:


1 (АК), 2 (К), 3 (А) – main (power) terminals.

K1, G1, K2, G2 (4, 5, 6, 7) – control terminals.

Thyristor module MTC600-10 datasheet:

PDFDownload pdf datasheet for thyristors MTC600-1000

Technical Passport for Thyristor Modules MTC (sample):

When supplying thyristors, if necessary, we provide technical passport and certificate of conformity.

  • Technical Passport
  • Technical Passport
  • Technical Passport

High Power Semiconductors by AS ENERGI

The company manufactures a wide range of power semiconductors (thyristors, diodes, modules).
You can buy thyristor modules from us in any volumes, and when ordering large lots, the price will be lower.
We have earned the trust of customers and supply products all over the world.

For questions regarding the acquisition of Power Modules, Diodes, Thyristors, send an email request to:

[email protected]

And we will provide you a commercial offer for delivery.
For a large number, we will provide an individual price!!!

We are open to manufacture products at our production facilities
according to your requests and technical task.

Photo Gallery

The photo gallery shows many different semiconductor devices, semiconductor chips and SCRs produced by AS ENERGITM, examples of test reports.

icon Why choose AS ENERGITM

  • Own production facilities, including semiconductor silicon chips production
  • European brand - 100% quality, favorable price, short production terms
  • Over 20 years of experience in the semiconductor industry
  • Clients from more than 50 countries trust us
  • 20000 items in the product line for currents from 10A to 15000A, voltages from 100V to 9000V
  • We produce analogues of other manufacturers' products
  • Guaranteed certified quality, warranty period of operation - 2 years


Quality Warranty

Our products are certified and correspond to international standards.
Our company provides a quality guarantee for products of 2 years.
We provide certificates of conformity, reliability reports, data sheets and technical passports at the request of the customer.


Each product is tested for the main parameters, and Test reports of the parameters for each product are provided.

Test Report

Geography of partnership

AS ENERGITM company manufactures and supplies power semiconductors to more than 50 countries around the world.


Logistics and Delivery

We deliver our products all over the world with the services of logistics companies: DHL, TNT, UPS, EMS, Fedex, Aramex.
Products can be delivered by any means of transport: air, sea, rail and road.


AS ENERGITM Semiconductors Manufacturing

Our products range includes rectifier diodes, phase control thyristors in disc and stud design, avalanche diodes and thyristors, fast switching, high frequency thyristors, fast recovery, welding and rotor diodes, triacs, bridge rectifiers, power modules (thyristor, diode, thyristor-diode, IGBT), and air and water heatsinks to them.

Power diodes and thyristors are produced for currents from 10A to 15000A, voltage range from 100V to 9000V.
Power diode and thyristor modules are produced from 25A and up to 1250A, voltage range 400V - 4400V.
The range of power semiconductors also includes equivalent, replacement, analogue and alternative semiconductor devices of global manufacturers.

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