Power Thyristor Module MTA300-10 (300A 1000V), MTA300-10-415F3

Average forward current, ITAV/IFAV (Tcase) 300A (85ºC)
Voltage, VRRM/VDRM 1000V
Voltage code, VRRM / 100 10
MTA300-10 on request
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Weight 1350 g
Package
Dimensions L×B×H
415F3
108x62x52
Datasheet Datasheet

Dual thyristor SCR module MTA 300-10 AS ENERGITM in an international standard package, 300A 1000V.

The thyristor modules MTA300-10-415F3 are characterized by high electrical and thermal cycling capability, meaning high reliability and long lifetime in intensive operation modes. The thyristor modules are housed in a industry-standard housing making it easy to integrate the device into existing equipment.

The two-position modules have different switching circuits (electrical circuit diagrams): МТChalf-bridge; МТKscheme with common cathode; МТAscheme with common anode.

The main (power) terminals are on the top of the case and are marked as 123 (common anode-anode, cathode, cathode). The control terminals are marked as K1, G1, K2, G2.

Dual thyristor modules MTA series are used in various power equipment - power and control units, power regulators, AC regulators, DC motors control, AC motor soft starters, converters, controllers of blast furnaces or chemical processes, welding equipment, and as rectifiers for AC converters.

Our modules are offered in several dual and single device topologies for almost all phase control or rectifier applications.

Our company provides a quality guarantee for thyristor / diode modules of 2 years from the date of purchase. When supplying thyristor / diode modules, if necessary, we provide technical passport and certificate of conformity.

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The final price for thyristor / diode modules depends on the class, quantity, delivery terms, manufacturer, country of origin and form of payment.

General specifications of thyristor-thyristor module MTA300-10, MTA300-10-415F3:

Thyristor module specifications MTA300-10
Maximum allowable average forward current (Case temperature) ITAV/IFAV (Tcase) 300 A (85ºC)
Repetitive pulsed reverse voltage; Repetitive pulsed closed state voltage VRRM/VDRM 1000 V
Surge on-state current ITSM/IFSM 9.2 A
Safety factor I2t 423 kA2·s
Threshold voltage VT(TO) 0.80 V
Critical rate of rise of off-state voltage dv/dt 800 V/µs
Critical rate of rise of on-state current di/dt 100 A/µs
Repetitive pulse current when closed; repetitive pulse return current IDRM/IRRM 35 mA
Gate trigger DC current IGT 180 mA
Gate trigger direct DC voltage VGT 2.5 V
Holding current IH 180 mA
Open pulse voltage VTM 1.58 V
Open pulse current ITM 900 A
On-state slope resistance rT 0.72 mΩ
Junction temperature Tvj max 125 ºC
Thermal resistance, junction to case Rth(j-c) 0.10 ºC/W
Design (switches) - dual component
Type (circuit diagram) - thyristor-thyristor
Weight W 1350 g
Package (Housing) type 415F3
Dimensions, mm L×B×H 108x62x52
Datasheet PDF Datasheet

Part numbering guide for thyristor–thyristor modules MTA:

MT A 300 10 415F3
MT Thyristor module, brand AS ENERGITM
A Circuit topology: common anode-anode.
300 Rated current (ITAV), A.
10 Voltage class (VRRM/100).
415F3 Package (housing) type.

Dimensions of thyristor module MTA300-10, MTA300-10-415F3:

dimensions

Circuit diagram of thyristor modules MTA:

circuit

1 (AA), 2 (K), 3 (K) – main (power) terminals.

K1, G1, K2, G2 (4, 5, 6, 7) – control terminals.


Thyristor module MTA300-10 datasheet:

PDFDownload pdf datasheet for thyristors MTA300-10


Technical Passport for Thyristor Modules MTA (sample):

When supplying thyristors, if necessary, we provide technical passport and certificate of conformity.

  • Technical Passport
  • Technical Passport
  • Technical Passport

High Power Semiconductors by AS ENERGI

The company manufactures a wide range of power semiconductors (thyristors, diodes, modules).
You can buy thyristor modules from us in any volumes, and when ordering large lots, the price will be lower.
We have earned the trust of customers and supply products all over the world.

For questions regarding the acquisition of Power Modules, Diodes, Thyristors, send an email request to:

[email protected]

And we will provide you a commercial offer for delivery.
For a large number, we will provide an individual price!!!

We are open to manufacture products at our production facilities
according to your requests and technical task.


icon Why choose AS ENERGITM

  • Own production facilities, including semiconductor silicon chips production
  • European brand - 100% quality, favorable price, short production terms
  • Over 20 years of experience in the semiconductor industry
  • Clients from more than 50 countries trust us
  • 20000 items in the product line for currents from 10A to 15000A, voltages from 100V to 9000V
  • We produce analogues of other manufacturers' products
  • Guaranteed certified quality, warranty period of operation - 2 years

 

Quality Warranty

Our products are certified and correspond to international standards.
Our company provides a quality guarantee for products of 2 years.
We provide certificates of conformity, reliability reports, data sheets and technical passports at the request of the customer.

Certificates

Each product is tested for the main parameters, and Test reports of the parameters for each product are provided.

Test Report

Geography of partnership

AS ENERGITM company manufactures and supplies power semiconductors to more than 50 countries around the world.

Geography

Logistics and Delivery

We deliver our products all over the world with the services of logistics companies: DHL, TNT, UPS, EMS, Fedex, Aramex.
Products can be delivered by any means of transport: air, sea, rail and road.

Logistics

AS ENERGITM Semiconductors Manufacturing

Our products range includes rectifier diodes, phase control thyristors in disc and stud design, avalanche diodes and thyristors, fast switching, high frequency thyristors, fast recovery, welding and rotor diodes, triacs, bridge rectifiers, power modules (thyristor, diode, thyristor-diode, IGBT), and air and water heatsinks to them.

Power diodes and thyristors are produced for currents from 10A to 15000A, voltage range from 100V to 9000V.
Power diode and thyristor modules are produced from 25A and up to 1250A, voltage range 400V - 4400V.
The range of power semiconductors also includes equivalent, replacement, analogue and alternative semiconductor devices of global manufacturers.


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