Diode Module DD98N25K (98A 2500V) Infineon Replacement

Infineon Part Number DD98N25K
Average forward current, IF(AV)M (TC) 98А (100ºC)
Voltage, VRRM 2500V
Package, Dimensions L×B×H DP20
92x20x30
Datasheet Datasheet
Replacement AS ENERGITM AMDD98N25K
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Dual Diode Module AMDD98N25K AS ENERGITM is a replacement, analogue, alternative and equivalent for diode-diode module DD98N25K Infineon Technologies. Average forward current IFAV98 ampere, repetitive peak reverse voltage VRRM2500V. Baseplate 20x92 mm.

The main (power) terminals are on the top of the case and are marked as 123 (common anode-cathode, cathode, anode).

The two-position diode-diode modules have a half-bridge switching circuit (common anode-cathode).

The diode modules are characterized by high electrical and thermal cycling capability, meaning high reliability and long lifetime in intensive operation modes. The diode modules are housed in a industry-standard housing making it easy to integrate the device into existing equipment.

Dual diode modules are used in various power equipment - power and control units, power regulators, AC regulators, DC motors control, AC motor soft starters, converters, controllers of blast furnaces or chemical processes, welding equipment, and as rectifiers for AC converters.

Our modules are offered in several dual and single device topologies for almost all phase control or rectifier applications.

Our company provides a quality guarantee for thyristor / diode modules of 2 years from the date of purchase. When supplying thyristor / diode modules, if necessary, we provide technical passport and certificate of conformity.

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The final price for thyristor / diode modules depends on the class, quantity, delivery terms, manufacturer, country of origin and form of payment.

General specifications of Diode Module DD98N25K Infineon and Replacement:

Diode module specifications DD98N25K
Maximum allowable average forward current (Case temperature) IFAV (Tcase) 98 A (100ºC)
Repetitive pulsed reverse voltage VRRM 2500 V
Surge current IFSM 2000 A
Safety factor I2t 20.00 kA2·s
Threshold voltage VT(TO) 0.82 V
Slope resistance rT 2.00 mΩ
Junction temperature Tvj max 150 ºC
Thermal resistance, junction to case Rth(j-c) 0.39 K/W
Design (switches) - dual component
Type (circuit diagram) - diode-diode
Weight W 0.16 kg
Package, Dimensions, mm L×B×H DP20
92x20x30
Replacement AS ENERGITM type AMDD98N25K
Datasheet PDF Datasheet

Part Numbering Guide for Diode-Diode Modules:

A M DD 98 N 25 S
A brand AS ENERGITM
M Product group: Module.
DD Circuit topology: Diode-Diode.
98 Average forward current IF(AV), Amp.
N Rectifier device.
25 Voltage class VRRM / 100.
S Mechanical construction:
K – pressure contact technology
S – solder technology

Circuit diagram of Diode-Diode Modules:

circuit

AK, K, A (1, 2, 3) – main (power) terminals.


High Power Semiconductors by AS ENERGI

The company manufactures a wide range of power semiconductors (thyristors, diodes, modules).
You can buy thyristor modules from us in any volumes, and when ordering large lots, the price will be lower.
We have earned the trust of customers and supply products all over the world.

For questions regarding the acquisition of Power Modules, Diodes, Thyristors, send an email request to:

[email protected]

And we will provide you a commercial offer for delivery.
For a large number, we will provide an individual price!!!

We are open to manufacture products at our production facilities
according to your requests and technical task.


Photo Gallery

The photo gallery shows many different semiconductor devices, semiconductor chips and SCRs produced by AS ENERGITM, examples of test reports.


icon Why choose AS ENERGITM

  • Own production facilities, including semiconductor silicon chips production
  • European brand - 100% quality, favorable price, short production terms
  • Over 20 years of experience in the semiconductor industry
  • Clients from more than 50 countries trust us
  • 20000 items in the product line for currents from 10A to 15000A, voltages from 100V to 9000V
  • We produce analogues of other manufacturers' products
  • Guaranteed certified quality, warranty period of operation - 2 years

 

Quality Warranty

Our products are certified and correspond to international standards.
Our company provides a quality guarantee for products of 2 years.
We provide certificates of conformity, reliability reports, data sheets and technical passports at the request of the customer.

Certificates

Each product is tested for the main parameters, and Test reports of the parameters for each product are provided.

Test Report

Geography of partnership

AS ENERGITM company manufactures and supplies power semiconductors to more than 50 countries around the world.

Geography

Logistics and Delivery

We deliver our products all over the world with the services of logistics companies: DHL, TNT, UPS, EMS, Fedex, Aramex.
Products can be delivered by any means of transport: air, sea, rail and road.

Logistics

AS ENERGITM Semiconductors Manufacturing

Our products range includes rectifier diodes, phase control thyristors in disc and stud design, avalanche diodes and thyristors, fast switching, high frequency thyristors, fast recovery, welding and rotor diodes, triacs, bridge rectifiers, power modules (thyristor, diode, thyristor-diode, IGBT), and air and water heatsinks to them.

Power diodes and thyristors are produced for currents from 10A to 15000A, voltage range from 100V to 9000V.
Power diode and thyristor modules are produced from 25A and up to 1250A, voltage range 400V - 4400V.
The range of power semiconductors also includes equivalent, replacement, analogue and alternative semiconductor devices of global manufacturers.


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