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Pavlo GorkunInverter Thyristor P71-300-08 Kubara Lamina Replacement
| Kubara Lamina Part Number | P71-300-08 |
| Average on-state current, IT(AV)M (TC) | 300А (75ºC) |
| Voltage, VDRM/VRRM | 800V |
| Package Stud thread |
8 M20x1.5 |
| Datasheet |  |
| Replacement AS ENERGITM | A-TSP71-300-08 |
| Add to Cart | on request
|
Inverter Thyristor A-TSP71-300-08 AS ENERGITM is a replacement, analogue, alternative and equivalent semiconductor device for inverter thyristor P71-300-08 Kubara Lamina. Average forward on-state current ITAV – 300 ampere, repetitive peak forward and reverse blocking voltage VDRM/VRRM – 800V. "Air-cooled heatsinks O series for stud devices" for thyristor cooling are also available to order.
Inverter Thyristors may be used to bond a source of stored energy, such as a capacitor to a load, or to bypass and protect the load in the case of a crowbar circuit. In these pulsed power applications where the rate of rise of current is very fast, the pulse power switch is acting as a closing switch and ordinary phase control thyristors (SCRS) are probable to fail due to the high di/dt experienced.
Thyristors AS ENERGITM have the following features: low static and dynamic losses, high values of VDRM/VRRM, extensive experience of using the devices in various industries, range of voltages from 100 to 9000 V and amperages from 100 to 15000 A, high resistance to thermal and electric cycling, natural or forced air cooling.
Specifications and parameters of P71-300-08 and replacement A-TSP71-300-08, datasheet PDF, dimensions, drawings are listed below.
Our company provides a quality guarantee for thyristors of 2 years from the date of purchase. When supplying thyristors, if necessary, we provide technical passport and certificate of conformity.
The final price for inverter thyristors depends on the voltage class, quantity, delivery terms, manufacturer, country of origin and form of payment.
General specifications of Inverter Thyristor Kubara Lamina and Replacement:
| Thyristor specifications | P71-300-08 | |
| Maximum allowable average forward current (Case temperature) | IT(AV)M (TC) | 300 A (75ºC) |
| Repetitive pulsed closed state voltage; repetitive pulsed reverse voltage | VDRM/VRRM | 800 V |
| Surge on-state current | ITSM | 7.4 kA |
| Safety factor | I2t | 274 kA2·s |
| Threshold voltage | VT0 | - |
| On-state slope resistance | rT | - |
| Peak on-state voltage | VTM | 2 V |
| Peak on-state current | ITM | 1500 A |
| Gate current to trigger | IGT | 200 mA |
| Gate voltage to trigger | VGT | 3 V |
| Turn-off time | tq | 20 µs |
| Rate of rise of on-state currentrepetitive | di/dt | 250 A/µs |
| Critical rate of raise of off-state voltage | dv/dt | 320 V/µs |
| Thermal resistance, junction to case | Rth(j-c) | 0.1 °C/W |
| Temperature of p-n junction | Tvj | -40...+125 ºC |
| Mounting torque | Md | 38.0-41.0 Nm |
| Weight | W | 500 g |
| Package (Housing) | type | 8 |
| Stud thread | Ød | M20x1.5 |
| Replacement AS ENERGITM | type | A-TSP71-300-08 |
| Datasheet | |
|
Part Numbering Guide for Inverter Thyristor A-TSP71-300-08:
| A | – | TSP | 7 | 1 | – | 300 | – | 08 |
| A | – |  AS ENERGITM |
| TSP | – | Product group: Inverter Thyristor. |
| 7 | – | Element size code. |
| 1 | – | Case type code: 1 – stud base, ceramic housing 2 – stud base, glass-metal housing 3,5 – ceramic, hockey puk case 4 – flat base, ceramic housing 6 – flat base, glass-metal housing |
| 300 | – | Average current in open state IT(AV), Amp. |
| 08 | – | Voltage class VRRM / 100. |
Dimensions of Phase Control Thyristor P71-300-08 and Replacement A-TSP71-300-08:
Package 8
High Power Semiconductors AS ENERGITM
Our company is engaged in the manufacturer and sale of wide range of power semiconductors (power thyristors, modules, rectifier diodes, avalanche, rotor and welding diodes, triacs etc.) currents up to 15000A and voltages to 9000V, and air and water heatsinks to them.
You can buy semiconductor devices in any volumes, and when ordering large lots, the price will be lower. We have earned the trust of customers and supply products all over the world.
For questions regarding the acquisition of Power Thyristors, Diodes, Modules send an email request to:
And we will provide you a commercial offer for delivery.
For a large number, we will provide an individual price!!!
We are open to manufacture products at our production facilities
according to your requests and technical task.
Photo Gallery
The photo gallery shows many different semiconductor devices, semiconductor chips and SCRs produced by AS ENERGITM, examples of test reports.
Installation recommendations for power stud mount thyristors:
The reliability of heat transfer and electrical contact between the mating surfaces of the thyristor and the cooler over the entire temperature range is ensured by appropriate torque.
Before assembly you should perform visual inspection (1) contact surfaces for mechanical damages and wipe (2), soaked with alcohol (toluene, gasoline, acetone).
To improve the parameters of heat transfer it is recommended to lubricate (3) a thin layer of silicone thermal conductive paste before the assembly, which is not a mandatory condition for installation.
After installation, the fasteners (nuts and washers) must be additionally secured against corrosion.
Tips and recommendations for power thyristors:
The power thyristors should not be operated for long periods of time at their limit load for all parameters. In this case, the safety factor is determined by the required degree of reliability of the device.
Replace a failed power thyristor with a thyristor that matches the parameters of the one being replaced.
Supercooling must be provided when operating in an environment with an elevated ambient temperature.
Periodic cleaning of power thyristors and coolers to remove dust and contaminants is recommended to ensure proper heat dissipation.
Inductive current dividers (often twisted toroidal wire) should be used to equalize currents between power thyristors connected in parallel. The most popular connection methods are closed circuit, common coil circuit, or power thyristor. The efficiency of current dividers in this case is determined by the cross section of the magnetic wire.
Prevention of voltage unbalance when power thyristors are connected in series is achieved by using shunt resistors connected in parallel with each thyristor. Voltage equalization in transient conditions is provided by connecting capacitors in parallel to each thyristor.
It is strictly forbidden to touch power thyristors under high voltage during operation.
Why choose AS ENERGITM
- Own production facilities, including semiconductor silicon chips production
- European brand - 100% quality, favorable price, short production terms
- Over 20 years of experience in the semiconductor industry
- Clients from more than 50 countries trust us
- 20000 items in the product line for currents from 10A to 15000A, voltages from 100V to 9000V
- We produce analogues of other manufacturers' products
- Guaranteed certified quality, warranty period of operation - 2 years
Quality Warranty
Our products are certified and correspond to international standards.
Our company provides a quality guarantee for products of 2 years.
We provide certificates of conformity, reliability reports, data sheets and technical passports at the request of the customer.
Each product is tested for the main parameters, and Test reports of the parameters for each product are provided.
Geography of partnership
AS ENERGITM company manufactures and supplies power semiconductors to more than 50 countries around the world.
Logistics and Delivery
We deliver our products all over the world with the services of logistics companies: DHL, TNT, UPS, EMS, Fedex, Aramex.
Products can be delivered by any means of transport: air, sea, rail and road.
AS ENERGITM Semiconductors Manufacturing
Our products range includes rectifier diodes, phase control thyristors in disc and stud design, avalanche diodes and thyristors, fast switching, high frequency thyristors, fast recovery, welding and rotor diodes, triacs, bridge rectifiers, power modules (thyristor, diode, thyristor-diode, IGBT), and air and water heatsinks to them.
Power diodes and thyristors are produced for currents from 10A to 15000A, voltage range from 100V to 9000V.
Power diode and thyristor modules are produced from 25A and up to 1250A, voltage range 400V - 4400V.
The range of power semiconductors also includes equivalent, replacement, analogue and alternative semiconductor devices of global manufacturers.
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