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Pavlo GorkunIGBT Module SKM1000GAL17R8 (1000A 1700V) Semikron Replacement
| Semikron Part Number | SKM1000GAL17R8 |
| Nominal collector current, ICnom | 1000А |
| Collector-emitter voltage, VCES | 1700V |
| Package, Dimensions L×B×H | Package 10 250x90x38 |
| Datasheet |  |
| Replacement AS ENERGITM | AMM1000GAL17R8 |
| Add to Cart | on request
|
IGBT Module AMM1000GAL17R8 AS ENERGITM is a replacement, analogue, alternative and equivalent for IGBT module SKM1000GAL17R8 SEMIKRON (SEMITRANS package). Nominal collector current ICnom – 1000 ampere, continuous collector current IC – 1574 ampere, collector-emitter voltage VCES – 1700V. Switches – Single Switch.
IGBT Modules are housed in a standard industrial case making it easy to easy integrate of the device into existing equipment.
The IGBT modules (Insulated Gate Bipolar Transistor) are used as switching elements for the power converters of variable-speed drives for motors, AC inverter drives, UPS, electronic welders, brake choppers, uninterruptable power supplies, and others. Available topologies include half bridge, single switch, sixpack, 3-level and many more, covering every application field.
The IGBT power module is becoming the preferred device for high power applications due to its ability to enhance switching, temperature, weight and cost performance.
The technical specifications of IGBT module SKM1000GAL17R8 and AMM1000GAL17R8, pdf datasheet, topology of internal connection, outline drawing and dimensions are listed below.
Our company provides a quality guarantee for IGBT modules of 2 years from the date of purchase. When supplying IGBT modules, if necessary, we provide technical passport and certificate of conformity.
The final price of IGBT modules depends on the voltage class, quantity, delivery terms, manufacturer, country of origin and form of payment.
General specifications of IGBT Module SKM1000GAL17R8 Semikron and Replacement:
| IGBT module specifications | SKM1000GAL17R8 | |
| IGBT | ||
| Nominal collector current | ICnom | 1000 A |
| Continuous collector current (Case temperature) | IC | 1574 A (25ºC) |
| Collector-emitter voltage | VCES | 1700 V |
| Collector-emitter saturation voltage (Tj = 25ºC typ.) | VCE(sat) | 1.66 V |
| Energy dissipation during turn-on | Eon | 420 mJ |
| Energy dissipation during turn-off | Eoff | 330 mJ |
| Diode | ||
| Continuous DC forward current (Case temperature) | IF | 1449 A (25ºC) |
| Forward voltage (Tj = 25ºC typ.) | VF | 1.78 V |
| Energy dissipation during reverse recovery (diode) | Err | 160 mJ |
| Module | ||
| Circuit topology | - | |
| Switches | - | Single Switch |
| Weight | W | 1.25 kg |
| Drawing, Package, Dimensions, mm | L×B×H | Package 10 250x90x38 |
| Replacement AS ENERGITM | type | AMM1000GAL17R8 |
| Datasheet | |
|
Part Numbering Guide for IGBT Modules:
| A | M | M | 1000 | GAL | 17 | R8 |
| A | – |  AS ENERGITM |
| M | – | Product group: Module. |
| M | – | Semiconductor Type: IGBT Module. |
| 1000 | – | Nominal collector current ICnom, Amp. |
| GAL | – | Topology of internal connection. |
| 17 | – | Collector-Emitter voltage class VCES / 100. |
| R8 | – | Features, e.g. IGBT Chip characteristic, Internal reference number. |
Dimensions of IGBT Module SKM1000GAL17R8 and Replacement AMM1000GAL17R8:
Package 10
Circuit diagram of IGBT Module SKM1000GAL17R8 and Replacement AMM1000GAL17R8:
Topology GAL
High Power Semiconductors by AS ENERGI
The company manufactures a wide range of power semiconductors (thyristors, diodes, modules).
You can buy thyristor modules from us in any volumes, and when ordering large lots, the price will be lower.
We have earned the trust of customers and supply products all over the world.
For questions regarding the acquisition of IGBT Modules, Power SCR Modules, Thyristors, Rectifier Diodes, send an email request to:
And we will provide you a commercial offer for delivery.
For a large number, we will provide an individual price!!!
We are open to manufacture products at our production facilities
according to your requests and technical task.
Photo Gallery
The photo gallery shows many different semiconductor devices, semiconductor chips and SCRs produced by AS ENERGITM, examples of test reports.
Why choose AS ENERGITM
- Own production facilities, including semiconductor silicon chips production
- European brand - 100% quality, favorable price, short production terms
- Over 20 years of experience in the semiconductor industry
- Clients from more than 50 countries trust us
- 20000 items in the product line for currents from 10A to 15000A, voltages from 100V to 9000V
- We produce analogues of other manufacturers' products
- Guaranteed certified quality, warranty period of operation - 2 years
Quality Warranty
Our products are certified and correspond to international standards.
Our company provides a quality guarantee for products of 2 years.
We provide certificates of conformity, reliability reports, data sheets and technical passports at the request of the customer.
Each product is tested for the main parameters, and Test reports of the parameters for each product are provided.
Geography of partnership
AS ENERGITM company manufactures and supplies power semiconductors to more than 50 countries around the world.
Logistics and Delivery
We deliver our products all over the world with the services of logistics companies: DHL, TNT, UPS, EMS, Fedex, Aramex.
Products can be delivered by any means of transport: air, sea, rail and road.
AS ENERGITM Semiconductors Manufacturing
Our products range includes rectifier diodes, phase control thyristors in disc and stud design, avalanche diodes and thyristors, fast switching, high frequency thyristors, fast recovery, welding and rotor diodes, triacs, bridge rectifiers, power modules (thyristor, diode, thyristor-diode, IGBT), and air and water heatsinks to them.
Power diodes and thyristors are produced for currents from 10A to 15000A, voltage range from 100V to 9000V.
Power diode and thyristor modules are produced from 25A and up to 1250A, voltage range 400V - 4400V.
The range of power semiconductors also includes equivalent, replacement, analogue and alternative semiconductor devices of global manufacturers.
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