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Pavlo GorkunIGBT Module FZ600R17KE3 (600A 1700V) Infineon Replacement
| Infineon Part Number | FZ600R17KE3 |
| Nominal collector current, ICnom | 600А |
| Collector-emitter voltage, VCES | 1700V |
| Package Dimensions L×B×H |
62 mm 106x61x30 mm |
| Datasheet |  |
| Replacement AS ENERGITM | AMFZ600R17KE3 |
| Add to Cart | on request
|
IGBT Module AMFZ600R17KE3 AS ENERGITM is a replacement, analogue, alternative and equivalent for IGBT module FZ600R17KE3 Infineon. Continuous collector current IC – 600 ampere, collector-emitter voltage VCES – 1700V.
IGBT Modules are housed in a standard industrial case making it easy to easy integrate of the device into existing equipment.
The IGBT modules (Insulated Gate Bipolar Transistor) are used as switching elements for the power converters of variable-speed drives for motors, AC inverter drives, UPS, electronic welders, brake choppers, uninterruptable power supplies, and others. Available topologies include half bridge, single switch, sixpack, 3-level and many more, covering every application field.
The IGBT power module is becoming the preferred device for high power applications due to its ability to enhance switching, temperature, weight and cost performance.
The technical specifications of IGBT module FZ600R17KE3 and AMFZ600R17KE3, pdf datasheet, topology of internal connection, outline drawing and dimensions are listed below.
Our company provides a quality guarantee for IGBT modules of 2 years from the date of purchase. When supplying IGBT modules, if necessary, we provide technical passport and certificate of conformity.
The final price of IGBT modules depends on the voltage class, quantity, delivery terms, manufacturer, country of origin and form of payment.
General specifications of IGBT Module FZ600R17KE3 Infineon and Replacement AMFZ600R17KE3:
| IGBT module specifications | FZ600R17KE3 | |
| IGBT | ||
| Continuous collector current | IC | 600 A |
| Collector-emitter voltage | VCES | 1700 V |
| Inductive load | RG | 2.4 Ω |
| Internal gate resistor | RGint | 1.3 Ω |
| Energy dissipation during turn-on | Eon | 200 mJ |
| Energy dissipation during turn-off | Eoff | 190 mJ |
| Diode | ||
| Continuous DC forward current | IF | 600 A |
| Forward voltage (Tj = 25ºC typ.) | VF | 2.2 V |
| Thermal resistance, junction to case | RthJC | 0.065 K/W |
| Thermal resistance, case to heatsink | RthCH | 0.026 K/W |
| Thermal resistance, junction to heatsink | RthJH | - |
| Temperature under switching conditions | Tvj | 125 °C |
| Module | ||
| Circuit topology | - | |
| Weight | W | 340 g |
| Drawing, Package, Dimensions, mm | L×B×H | 62 mm 106x61x30 mm |
| Replacement AS ENERGITM | type | AMFZ600R17KE3 |
| Datasheet | |
|
Part Numbering Guide for IGBT Module AMFZ600R17KE3:
| A | M | FZ | 600 | R | 17 | KE3 |
| A | – |  AS ENERGITM |
| M | – | Semiconductor Type: IGBT Module. |
| FZ | – | Module Topology. |
| 600 | – | Current Rating, Amp. |
| R | – | Functionality. |
| 17 | – | Collector-Emitter voltage class VCES / 100. |
| KE3 | – | Construction variation. |
Dimensions of IGBT Module FZ600R17KE3 and Replacement AMFZ600R17KE3:
62 mm
Circuit diagram of IGBT Module FZ600R17KE3 and Replacement AMFZ600R17KE3:
Topology
High Power Semiconductors by AS ENERGI
The company manufactures a wide range of power semiconductors (thyristors, diodes, modules).
You can buy thyristor modules from us in any volumes, and when ordering large lots, the price will be lower.
We have earned the trust of customers and supply products all over the world.
For questions regarding the acquisition of IGBT Modules, Power SCR Modules, Thyristors, Rectifier Diodes, send an email request to:
And we will provide you a commercial offer for delivery.
For a large number, we will provide an individual price!!!
We are open to manufacture products at our production facilities
according to your requests and technical task.
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The photo gallery shows many different semiconductor devices, semiconductor chips and SCRs produced by AS ENERGITM, examples of test reports.
Why choose AS ENERGITM
- Own production facilities, including semiconductor silicon chips production
- European brand - 100% quality, favorable price, short production terms
- Over 20 years of experience in the semiconductor industry
- Clients from more than 50 countries trust us
- 20000 items in the product line for currents from 10A to 15000A, voltages from 100V to 9000V
- We produce analogues of other manufacturers' products
- Guaranteed certified quality, warranty period of operation - 2 years
Quality Warranty
Our products are certified and correspond to international standards.
Our company provides a quality guarantee for products of 2 years.
We provide certificates of conformity, reliability reports, data sheets and technical passports at the request of the customer.
Each product is tested for the main parameters, and Test reports of the parameters for each product are provided.
Geography of partnership
AS ENERGITM company manufactures and supplies power semiconductors to more than 50 countries around the world.
Logistics and Delivery
We deliver our products all over the world with the services of logistics companies: DHL, TNT, UPS, EMS, Fedex, Aramex.
Products can be delivered by any means of transport: air, sea, rail and road.
AS ENERGITM Semiconductors Manufacturing
Our products range includes rectifier diodes, phase control thyristors in disc and stud design, avalanche diodes and thyristors, fast switching, high frequency thyristors, fast recovery, welding and rotor diodes, triacs, bridge rectifiers, power modules (thyristor, diode, thyristor-diode, IGBT), and air and water heatsinks to them.
Power diodes and thyristors are produced for currents from 10A to 15000A, voltage range from 100V to 9000V.
Power diode and thyristor modules are produced from 25A and up to 1250A, voltage range 400V - 4400V.
The range of power semiconductors also includes equivalent, replacement, analogue and alternative semiconductor devices of global manufacturers.
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