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Pavlo GorkunHigh Performance Fast Recovery Diode DSEP2X61-03A IXYS Replacement
| IXYS Part Number | DSEP2X61-03A |
| Average forward current, IF(AV)M | 2x60 A |
| Voltage, VRRM | 300 V |
| Package Dimensions LxBxH |
SOT-227B (minibloc) 38x25x12 mm |
| Datasheet |  |
| Replacement AS ENERGITM | AMDSEP2X61-03A |
| Add to Cart | on request
|
High Performance Fast Recovery Diode (HiPerFRED) AMDSEP2X61-03A AS ENERGITM is a replacement, analogue, alternative and equivalent semiconductor device for high performance fast recovery diode DSEP2X61-03A IXYS.
Average forward current IFAV – 2x60 ampere, repetitive peak reverse voltage VRRM – 300V.
Features: planar passivated chips; very low leakage current; very short recovery time; improved thermal behaviour; very low Irm-values; very soft recovery behaviour; avalanche voltage rated for reliable operation; soft reverse recovery for low EMI/RFI.
"Air-cooled heatsinks O series for disc devices", "Air heatsink SF series", "Water heatsink SS series" for thyristors and diodes cooling are also available to order.
Rectifier Diodes AS ENERGITM have the following features: industry standard housing; low static and dynamic losses, high values of VRRM/VRSM, extensive experience of using the devices in various industries, range of voltages from 100 to 9000 V and amperages from 10 to 15000 A, high resistance to thermal and electric cycling.
The technical specifications and parameters of DSEP2X61-03A and replacement AMDSEP2X61-03A, datasheet PDF, outline drawing and dimensions are listed below.
Our company provides a quality guarantee for fast recovery diodes of 2 years from the date of purchase. When supplying diodes, if necessary, we provide technical passport and certificate of conformity.
The final price for fast recovery diodes depends on the voltage class, quantity, delivery terms, manufacturer, country of origin and form of payment.
General specifications of High Performance Fast Recovery Diode DSEP2X61-03A IXYS
and Replacement AMDSEP2X61-03A:
| Diode specifications | DSEP2X61-03A | |
| Maximum allowable average forward current | IF(AV)M | 2x60 A |
| Max. repetitive peak reverse blocking voltage | VRRM | 300 V |
| Surge peak forward current | IFSM | 600 A |
| Threshold voltage | VF0 | 0.79 V |
| Slope resistance | rF | 5.3 mΩ |
| Reverse recovery time | trr | 40 ns |
| Max. reverse recovery current | IRM | 12 A |
| Temperature of p-n junction | Tvj max | 150 ºC |
| Thermal resistance, junction to case | RthJC | 0.85 K/W |
| Thermal resistance, case to heatsink | RthCH | 0.1 K/W |
| Mounting torque | MD | 1,5 Nm |
| Weight | W | 30 g |
| Type (circuit diagram) | - | Parallel legs |
| Package (Housing) | type | SOT-227B (minibloc) |
| Dimensions | LxBxH | 38x25x12 mm |
| Replacement AS ENERGITM | type | AMDSEP2X61-03A |
| Datasheet | |
|
Part Numbering Guide for High Performance Fast Recovery Diode AMDSEP2X61-03A:
| A | MD | SEP | 2X61 | - | 03A |
| A | – |  AS ENERGITM |
| MD | – | Semiconductor Type: Module Diode. |
| SEP | – | Topology of internal connection. |
| 2X61 | – | 2 diodes of IF(AV) = 61A each. |
| 03 | – | Voltage class VRRM / 100. |
Dimensions of High Performance Fast Recovery Diode DSEP2X61-03A and Replacement AMDSEP2X61-03A:
Package SOT-227B (minibloc)
High Power Semiconductors AS ENERGITM
Our company is engaged in the manufacturer and sale of wide range of power semiconductors (power thyristors, modules, rectifier diodes, avalanche, rotor and welding diodes, triacs etc.) currents up to 15000A and voltages to 9000V, and air and water heatsinks to them.
You can buy semiconductor devices in any volumes, and when ordering large lots, the price will be lower. We have earned the trust of customers and supply products all over the world.
For questions regarding the acquisition of Power Thyristors, Diodes, Modules send an email request to:
And we will provide you a commercial offer for delivery.
For a large number, we will provide an individual price!!!
We are open to manufacture products at our production facilities
according to your requests and technical task.
Photo Gallery
The photo gallery shows many different semiconductor devices, semiconductor chips and SCRs produced by AS ENERGITM, examples of test reports.
Why choose AS ENERGITM
- Own production facilities, including semiconductor silicon chips production
- European brand - 100% quality, favorable price, short production terms
- Over 20 years of experience in the semiconductor industry
- Clients from more than 50 countries trust us
- 20000 items in the product line for currents from 10A to 15000A, voltages from 100V to 9000V
- We produce analogues of other manufacturers' products
- Guaranteed certified quality, warranty period of operation - 2 years
Quality Warranty
Our products are certified and correspond to international standards.
Our company provides a quality guarantee for products of 2 years.
We provide certificates of conformity, reliability reports, data sheets and technical passports at the request of the customer.
Each product is tested for the main parameters, and Test reports of the parameters for each product are provided.
Geography of partnership
AS ENERGITM company manufactures and supplies power semiconductors to more than 50 countries around the world.
Logistics and Delivery
We deliver our products all over the world with the services of logistics companies: DHL, TNT, UPS, EMS, Fedex, Aramex.
Products can be delivered by any means of transport: air, sea, rail and road.
AS ENERGITM Semiconductors Manufacturing
Our products range includes rectifier diodes, phase control thyristors in disc and stud design, avalanche diodes and thyristors, fast switching, high frequency thyristors, fast recovery, welding and rotor diodes, triacs, bridge rectifiers, power modules (thyristor, diode, thyristor-diode, IGBT), and air and water heatsinks to them.
Power diodes and thyristors are produced for currents from 10A to 15000A, voltage range from 100V to 9000V.
Power diode and thyristor modules are produced from 25A and up to 1250A, voltage range 400V - 4400V.
The range of power semiconductors also includes equivalent, replacement, analogue and alternative semiconductor devices of global manufacturers.
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