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AS ENERGIGate Turn-Off Thyristor FG6000AU-120D Mitsubishi Electric Replacement
| Part Number | FG6000AU-120D |
| Average on-state current, IT(AV) (TC) | 1500A |
| Voltage, VDRM | 6000 V |
| Dimensions ØDxØdxH | 190x35 mm |
| Datasheet |
 |
| Replacement AS ENERGITM | AFG 6000-120-AU-D |
| Add to Cart | on request
|
AFG 6000-120-AU-D AS ENERGITM is a replacement, analogue, alternative and equivalent semiconductor device for Gate turn-off thyristor FG6000AU-120D, Mitsubishi Electric.
Average forward on-state current ITAV – 1500 A, repetitive peak forward and reverse voltage VDRM – 6000 V.
Air and water heat sinks for thyristor cooling are also available to order.
Features of a Gate turn-off Thyristor: low switching losses; short turn-off time; fast turn-on and increased di/dt capability. The anode and cathode of the thyristor (polarity) are determined by the symbol on the case.
Thyristors AS ENERGITM have the following features: low static and dynamic losses, high values of VDRM, extensive experience of using the devices in various industries, range of voltages from 100 to 9000 V and amperages from 10 to 15000 A, high resistance to thermal and electric cycling, natural or forced air cooling.
Specifications and parameters, datasheet PDF, dimensions, drawings are listed below.
Our company provides a quality guarantee for thyristors of 2 years from the date of purchase. When supplying thyristors, if necessary, we provide technical passport and certificate of conformity.
The final price for standard recovery diodes in stud design depends on the voltage class, quantity, delivery terms, manufacturer, country of origin and form of payment.
Read more
Cycle
9001:2015
Tested
Compliant
2 years
Conformity
The final price for gate turn-off thyristors depends on the voltage class, quantity, delivery terms, manufacturer, country of origin and form of payment.
General specifications of Gate Turn-Off Thyristor FG6000AU-120D and Replacements:
| Thyristors specifications | FG6000AU-120D |
|
| Maximum allowable average forward current (Case temperature) | IT(AV)/(TC) | 1500 A |
| Repetitive pulsed closed state voltage; repetitive pulsed reverse voltage | VDRM | 6000 V |
| Repetitive controllable on-state current | ITQRM | 6000 A |
| Peak gate turn-off current | IGQM | 1800A |
| RMS on-state current | IT(RMS) | 3100 A |
| Average on-state current | IT(AV) | 1500 A |
| Surge (non-repetitive) on-state current | ITSM | 40 kA |
| On-state voltage | VTM | 6.0 V |
| Critical rate of rise of off-state voltage | dv/dt | 1000 V/µs |
| Turn-off time | tgq | 30µs |
| Thermal resistance, junction to case | Rth(j-f) | 0.0044 °C/W |
| Weight | W | 4600 g |
| Dimensions | ØDxØdxH | 190x35 mm |
| Package (Housing) | type | AU |
| Replacement AS ENERGITM | type | AFG 6000-120-AU-D |
| Datasheet |
|
|
Part Numbering Guide for Turn-Off Thyristor:
| A | FG | 6000 | – | 120 | – | AU | – | D |
| A | – |  AS ENERGITM |
| FG | – | Product group: Gate Turn-Off Thyristors. |
| 6000 | – | Max. controllable turn off current TGQM. |
| 120 | – | Voltage code VRRM / 100. |
| AU | – | Housing (package) type. |
| D | – | Version number. |
Dimensions of thyristor FG6000AU-120D and Replacement AFG 6000-120-AU-D:
AU
High Power Semiconductors AS ENERGITM
Our company is engaged in the manufacturer and sale of wide range of power semiconductors (power thyristors, modules, rectifier diodes, avalanche, rotor and welding diodes, triacs etc.) currents up to 15000A and voltages to 9000V, and air and water heatsinks to them.
You can buy semiconductor devices in any volumes, and when ordering large lots, the price will be lower. We have earned the trust of customers and supply products all over the world.
For questions regarding the acquisition of Power Thyristors, Diodes, Modules send an email request to:
And we will provide you a commercial offer for delivery.
For a large number, we will provide an individual price!!!
We are open to manufacture products at our production facilities
according to your requests and technical task.
Heat sinks for power disc thyristors:
Heat sinks (radiators) are used for single- and double-sided cooling of power semiconductor devices in disc design.
Heat sinks of coolers are made of aluminum radiator profiles and do not require additional protective coating when used in various climatic conditions.
Air and water heat sinks for thyristor cooling are also available to order.
See for more information about heatsinks: "Air-cooled heatsinks O series for disc devices", "Air heatsink SF series", "Water heatsink SS series".
Why choose AS ENERGITM
- Own production facilities, including semiconductor silicon chips production
- European brand - 100% quality, favorable price, short production terms
- Over 20 years of experience in the semiconductor industry
- Clients from more than 50 countries trust us
- 20000 items in the product line for currents from 10A to 15000A, voltages from 100V to 9000V
- We produce analogues of other manufacturers' products
- Guaranteed certified quality, warranty period of operation - 2 years
Quality Warranty
Our products are certified and correspond to international standards.
Our company provides a quality guarantee for products of 2 years.
We provide certificates of conformity, reliability reports, data sheets and technical passports at the request of the customer.
Each product is tested for the main parameters, and Test reports of the parameters for each product are provided.
Geography of partnership
AS ENERGITM company manufactures and supplies power semiconductors to more than 50 countries around the world.
Logistics and Delivery
We deliver our products all over the world with the services of logistics companies: DHL, TNT, UPS, EMS, Fedex, Aramex.
Products can be delivered by any means of transport: air, sea, rail and road.
AS ENERGITM Semiconductors Manufacturing
Our products range includes rectifier diodes, phase control thyristors in disc and stud design, avalanche diodes and thyristors, fast switching, high frequency thyristors, fast recovery, welding and rotor diodes, triacs, bridge rectifiers, power modules (thyristor, diode, thyristor-diode, IGBT), and air and water heatsinks to them.
Power diodes and thyristors are produced for currents from 10A to 15000A, voltage range from 100V to 9000V.
Power diode and thyristor modules are produced from 25A and up to 1250A, voltage range 400V - 4400V.
The range of power semiconductors also includes equivalent, replacement, analogue and alternative semiconductor devices of global manufacturers.
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