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AS ENERGIGate Turn-Off Thyristors S1200NC25D IXYS Replacement
| Part Number | S1200NC25D |
| Average on-state current, IT(AV)M | 790A |
| Voltage, VDRM | 2500V |
| Package Dimensions ØDxØdxH |
Package W36 67x47x28 mm |
| Datasheet |  |
| Replacement AS ENERGITM | A-TGS1200NC25D |
| Add to Cart | on request
|
Gate Turn-Off Thyristors A-TGS1200NC25D AS ENERGITM is a replacement, analogue, alternative and equivalent semiconductor device for GTO thyristor S1200NC25D.
Average forward on-state current ITAV – 790 ampere, repetitive peak forward and reverse voltage VDRM – 2500V. GTO are designed to convert and control DC and AC currents. "Air-cooled heatsinks O series for disc devices", "Air heatsink SF series", "Water heatsink SS series" for thyristor cooling are also available to order.
A GTO is a thyristor that can be turned off by applying a current to the gate in the reverse direction to that required to turn it on.
Thyristors AS ENERGITM have the following features: low static and dynamic losses, high values of VDRM/VRRM, extensive experience of using the devices in various industries, range of voltages from 100 to 9000 V and amperages from 10 to 15000 A, high resistance to thermal and electric cycling, natural or forced air cooling.
The technical specifications and parameters of SCR thyristor S1200NC25D Poseico and replacement A-TGS1200NC25D, datasheet PDF, outline drawing and dimensions are listed below.
Our company provides a quality guarantee for thyristors of 2 years from the date of purchase. When supplying thyristors, if necessary, we provide technical passport and certificate of conformity.
The final price for standard recovery diodes in stud design depends on the voltage class, quantity, delivery terms, manufacturer, country of origin and form of payment.
Read more
Cycle
9001:2015
Tested
Compliant
2 years
Conformity
The final price for phase control disc thyristors depends on the voltage class, quantity, delivery terms, manufacturer, country of origin and form of payment.
General specifications of Gate Turn-Off Thyristors Replacements:
| Thyristors specifications | S1200NC25D | |
| Maximum allowable average forward current (Case temperature) | IT(AV) (TC) | 790 A (55ºC) |
| Repetitive pulsed closed state voltage | VDRM | 2500 V |
| Repetitive peak reverse voltage | VRRM | 2000 V |
| Peak turn-off gate current | IGQM | 1200 mA |
| Peak non-repetitive surge current | ITSM | 13.00 mA |
| Safety factor | I2t | 840x103 A2·s |
| Turn-on time | tgt | 4.5 µs |
| Turn-off time | tgq | 19.00 µs |
| Gate trigger voltage | VT | 2.700 V |
| Temperature of p-n junction | Tvj max | 125 ºC |
| Thermal resistance, junction to heatsink | Rth((j-c) | 0.0270 K/W |
| Weight | W | 500 g |
| Package (Housing) | type | W36 |
| Dimensions | ØDxØdxH | 67x47x28 mm |
| Replacement AS ENERGITM | type | A-TGS1200NC25D |
| Datasheet | |
|
Part Numbering Guide for Gate Turn-Off Thyristors:
| A | – | TG | S1200 | NC | 25 | D |
| A | – |  AS ENERGITM |
| TG | – | Product group: Gate Turn-Off Thyristors. |
| S1200 | – | Fixed Type Code. |
| NC | – | Housing (package) code. |
| 25 | – | Voltage code VRRM / 100. |
| D | – | Fixed turn-off time code. |
Dimensions of Phase Control Thyristor S1200NC25D and Replacement A-TGS1200NC25D:
W36
High Power Semiconductors AS ENERGITM
Our company is engaged in the manufacturer and sale of wide range of power semiconductors (power thyristors, modules, rectifier diodes, avalanche, rotor and welding diodes, triacs etc.) currents up to 15000A and voltages to 9000V, and air and water heatsinks to them.
You can buy semiconductor devices in any volumes, and when ordering large lots, the price will be lower. We have earned the trust of customers and supply products all over the world.
For questions regarding the acquisition of Power Thyristors, Diodes, Modules send an email request to:
And we will provide you a commercial offer for delivery.
For a large number, we will provide an individual price!!!
We are open to manufacture products at our production facilities
according to your requests and technical task.
Heat sinks for power disc thyristors:
Heat sinks (radiators) are used for single- and double-sided cooling of power semiconductor devices in disc design.
Heat sinks of coolers are made of aluminum radiator profiles and do not require additional protective coating when used in various climatic conditions.
Air and water heat sinks for thyristor cooling are also available to order.
See for more information about heatsinks: "Air-cooled heatsinks O series for disc devices", "Air heatsink SF series", "Water heatsink SS series".
Photo of Phase Control Thyristor SCR:
Why choose AS ENERGITM
- Own production facilities, including semiconductor silicon chips production
- European brand - 100% quality, favorable price, short production terms
- Over 20 years of experience in the semiconductor industry
- Clients from more than 50 countries trust us
- 20000 items in the product line for currents from 10A to 15000A, voltages from 100V to 9000V
- We produce analogues of other manufacturers' products
- Guaranteed certified quality, warranty period of operation - 2 years
Quality Warranty
Our products are certified and correspond to international standards.
Our company provides a quality guarantee for products of 2 years.
We provide certificates of conformity, reliability reports, data sheets and technical passports at the request of the customer.
Each product is tested for the main parameters, and Test reports of the parameters for each product are provided.
Geography of partnership
AS ENERGITM company manufactures and supplies power semiconductors to more than 50 countries around the world.
Logistics and Delivery
We deliver our products all over the world with the services of logistics companies: DHL, TNT, UPS, EMS, Fedex, Aramex.
Products can be delivered by any means of transport: air, sea, rail and road.
AS ENERGITM Semiconductors Manufacturing
Our products range includes rectifier diodes, phase control thyristors in disc and stud design, avalanche diodes and thyristors, fast switching, high frequency thyristors, fast recovery, welding and rotor diodes, triacs, bridge rectifiers, power modules (thyristor, diode, thyristor-diode, IGBT), and air and water heatsinks to them.
Power diodes and thyristors are produced for currents from 10A to 15000A, voltage range from 100V to 9000V.
Power diode and thyristor modules are produced from 25A and up to 1250A, voltage range 400V - 4400V.
The range of power semiconductors also includes equivalent, replacement, analogue and alternative semiconductor devices of global manufacturers.
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