Disc Fast Thyristor C612L (600A 2000V) Powerex Replacement

Powerex Part Number C612L
Average on-state current, IT(AV)M 600A
Voltage, VDRM/VRRM 2000V
Turn-off time tq 55 to 60 µs
Package
Dimensions
T82
58.5x34x27
Datasheet
Replacement AS ENERGITM A-C612L
Add to Cart on request
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Fast Thyristor A-C612L AS ENERGITM is a replacement, analogue, alternative and equivalent semiconductor device for fast switching thyristor (fast turn-off thyristor) C612L Powerex.

Average on-state current ITAV600A, repetitive peak forward/reverse voltage VDRM/VRRM2000V, turn-off time tq55 to 60 µs. Disc thyristor are designed to convert and control DC and AC currents. "Air-cooled heatsinks O series for disc devices", "Air heatsink SF series", "Water heatsink SS series" for thyristor cooling are also available to order.

Features: Fast Thyristors ensure low switching losses and high di/dt performance. Fast thyristors are suitable for existing inverter, DC chopper drives, UPS and pulse power applications.

Thyristors AS ENERGITM have the following features: low static and dynamic losses, high values of VDRM/VRRM, extensive experience of using the devices in various industries, range of voltages from 100 to 9000 V and amperages from 10 to 15000 A, high resistance to thermal and electric cycling, natural or forced air cooling.

The technical specifications and parameters of C612L and replacement A-C612L, datasheet PDF, outline drawing and dimensions are listed below.

Our company provides a quality guarantee for thyristors of 2 years from the date of purchase. When supplying thyristors, if necessary, we provide technical passport and certificate of conformity.

The final price for standard recovery diodes in stud design depends on the voltage class, quantity, delivery terms, manufacturer, country of origin and form of payment.

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AS ENERGI
Power Semiconductors Manufacturer
SCR's Devices: 10A-20200A, 100V-9000V
Full Production
Cycle
ISO
9001:2015
100% Products
Tested
RoHS/REACH
Compliant
Warranty
2 years
Certificate of
Conformity

The final price for fast thyristors depends on the voltage class, quantity, delivery terms, manufacturer, country of origin and form of payment.

General specifications of Fast Thyristor Powerex and Replacement:

Thyristor specifications C612L
Maximum allowable average forward current (Case temperature) IT(AV) (Tcase) 600 A (70ºC)
Repetitive peak off-state voltage; repetitive peak reverse voltage VDRM/VRRM 2000 V
Repetitive peak off-state and Repetitive peak reverse currents, max IDRM/IRRM 45 mA
Surge on-state current ITSM 9 kA
Safety factor I2t 336 kA2·s
Turn-off time tq 55 to 60 µs
Critical rate of rise of on-state current di/dt 200 A/µs
Critical rate of rise of on-state current dv/dt 200 V/µs
Temperature Tj -40 to 125 ºC
Thermal resistance, junction to case Rth(j-c) 0.045 °C/W
Clamping force Fm 16 to 18 kN
Package (Housing) type T82
Dimensions - 58.5x34x27
Replacement AS ENERGITM type A-C612L
Datasheet PDF

Part Numbering Guide for Fast Thyristor A-C612L:

A - C612 - L
A brand AS ENERGITM
C612 T82 case press pak, Inverter thyristor.
L M: VRRM/VDRM=600V;
N: VRRM/VDRM=800V;
P: VRRM/VDRM=1000V;
PB: VRRM/VDRM=1200V;
PD: VRRM/VDRM=1400V;
PM: VRRM/VDRM=1600V;
PN: VRRM/VDRM=1800V;
L: VRRM/VDRM=2000V.

Dimensions of Fast Thyristor C612L and Replacement A-C612L:

C612L dimensions

Package T50


High Power Semiconductors AS ENERGITM

Our company is engaged in the manufacturer and sale of wide range of power semiconductors (power thyristors, modules, rectifier diodes, avalanche, rotor and welding diodes, triacs etc.) currents up to 15000A and voltages to 9000V, and air and water heatsinks to them.
You can buy semiconductor devices in any volumes, and when ordering large lots, the price will be lower. We have earned the trust of customers and supply products all over the world.

For questions regarding the acquisition of Power Thyristors, Diodes, Modules send an email request to:

[email protected]

And we will provide you a commercial offer for delivery.
For a large number, we will provide an individual price!!!

We are open to manufacture products at our production facilities
according to your requests and technical task.


Photo Gallery

The photo gallery shows many different semiconductor devices, semiconductor chips and SCRs produced by AS ENERGITM, examples of test reports.


icon Why choose AS ENERGITM

  • Own production facilities, including semiconductor silicon chips production
  • European brand - 100% quality, favorable price, short production terms
  • Over 20 years of experience in the semiconductor industry
  • Clients from more than 50 countries trust us
  • 20000 items in the product line for currents from 10A to 15000A, voltages from 100V to 9000V
  • We produce analogues of other manufacturers' products
  • Guaranteed certified quality, warranty period of operation - 2 years

 

Quality Warranty

Our products are certified and correspond to international standards.
Our company provides a quality guarantee for products of 2 years.
We provide certificates of conformity, reliability reports, data sheets and technical passports at the request of the customer.

Certificates

Each product is tested for the main parameters, and Test reports of the parameters for each product are provided.

Test Report

Geography of partnership

AS ENERGITM company manufactures and supplies power semiconductors to more than 50 countries around the world.

Geography

Logistics and Delivery

We deliver our products all over the world with the services of logistics companies: DHL, TNT, UPS, EMS, Fedex, Aramex.
Products can be delivered by any means of transport: air, sea, rail and road.

Logistics

AS ENERGITM Semiconductors Manufacturing

Our products range includes rectifier diodes, phase control thyristors in disc and stud design, avalanche diodes and thyristors, fast switching, high frequency thyristors, fast recovery, welding and rotor diodes, triacs, bridge rectifiers, power modules (thyristor, diode, thyristor-diode, IGBT), and air and water heatsinks to them.

Power diodes and thyristors are produced for currents from 10A to 15000A, voltage range from 100V to 9000V.
Power diode and thyristor modules are produced from 25A and up to 1250A, voltage range 400V - 4400V.
The range of power semiconductors also includes equivalent, replacement, analogue and alternative semiconductor devices of global manufacturers.


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