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AS ENERGIDisc Fast Recovery Diode R9G2-12-14AJ + Powerex Replacement
| Powerex Part Number | R9G2-12-14AJ + |
| Average forward current, IF(AV)M (TC) | 1400A (80ºC) |
| Voltage, VRRM | 1200V |
| Package Dimensions |
R9G 73.5x47x27.4 |
| Datasheet |  |
| Replacement AS ENERGITM | ADD-R9G2-12-14AJ + |
| Add to Cart | on request
|
Fast Recovery Diode ADD-R9G2-12-14AJ + AS ENERGITM is a replacement, analogue, alternative and equivalent semiconductor device for fast recovery diode R9G2-12-14AJ + Powerex. Average forward current IFAV – 1400 ampere, repetitive peak reverse voltage VRRM – 1200V.
Features of Fast Recovery Diodes: optimised for line frequency; high surge capability; low recovery charge; low reverse recovery time; high switching speed; high reverse voltage and high current handling capabilities. The peculiarity of diodes is their fast recovery (short reverse recovery time trr and small recovery charge) and application at high frequencies. Diodes have a high current-carrying capacity at high frequencies. Their main applications are for DC-DC converters and inverters, induction heating, high-frequency rectifiers, switching power supplies. Air and water heat sinks for diode cooling are also available to order.
"Air-cooled heatsinks O series for disc devices", "Air heatsink SF series", "Water heatsink SS series" for thyristor cooling are also available to order.
Rectifier Diodes AS ENERGITM have the following features: industry standard housing; low static and dynamic losses, high values of VRRM/VRSM, extensive experience of using the devices in various industries, range of voltages from 100 to 9000 V and amperages from 100 to 7500 A, high resistance to thermal and electric cycling.
The technical specifications and parameters of R9G2-12-14AJ + and replacement ADD-R9G2-12-14AJ +, datasheet PDF, outline drawing and dimensions are listed below.
Our company provides a quality guarantee for fast recovery diodes of 2 years from the date of purchase. When supplying diodes, if necessary, we provide technical passport and certificate of conformity.
The final price for standard recovery diodes in stud design depends on the voltage class, quantity, delivery terms, manufacturer, country of origin and form of payment.
Read more
Cycle
9001:2015
Tested
Compliant
2 years
Conformity
The final price for fast recovery diodes depends on the voltage class, quantity, delivery terms, manufacturer, country of origin and form of payment.
General specifications of Fast Recovery Diode Powerex and Replacement:
| Diode specifications | R9G2-12-14AJ + | |
| Max. allowable average forward current (Case temperature) | IF(AV)M (TC) | 1400 A (80ºC) |
| Max. repetitive peak reverse blocking voltage | VRRM | 1200 V |
| Repetitive peak reverse currents, max | IRRM | 100 mA |
| Surge peak forward current | IFSM | 25 kA |
| Safety factor | I2t | 2590 kA2·s |
| Threshold voltage | VF(T0) | - |
| On-state slope resistance | rT | - |
| Peak on-state current | IFM | 1500 A |
| Critical rate of rise of on-state current | di/dt | 25 A/µs |
| Reverse recovery time | trr | 5 µs |
| Thermal resistance, junction to case | Rth(j-c) | 0.023 °C/W °C/W |
| Temperature | Tj | - 40 to 150 ºC |
| Clamping force | Fm | 22.7 to 27 kN |
| Package (Housing) | type | R9G |
| Dimensions | - | 73.5x47x27.4 |
| Replacement AS ENERGITM | type | ADD-R9G2-12-14AJ + |
| Datasheet | |
|
Part Numbering Guide for Fast Recovery Diode ADD-R9G2-12-14AJ +:
| A | DS | – | R9G | 2 | 12 | – | 14 | AJ | + |
| A | – |  AS ENERGITM |
||||||||||||||||||||||||||
| DS | – | Product group: Diode Stud. | ||||||||||||||||||||||||||
| R9G | – | Type of case. | ||||||||||||||||||||||||||
| 2 | – | 2: Fast Recovery Diode (for stud standard polarity: cathode to base); 3: Fast Recovery Diode (for stud reverse polarity: anode to base); S: GTO Snubber Diode (for stud standard polarity: cathode to base); R: GTO Snubber Diode (for stud reverse polarity: anode to base); F: GTO Free Wheel Diode (for stud standard polarity: cathode to base); E: GTO Free Wheel Diode (for stud reverse polarity: anode to base). |
||||||||||||||||||||||||||
| 12 | – | Voltage class VRRM / 100. | ||||||||||||||||||||||||||
| 14 | – | Average current in open state IF(AV), Amp. | ||||||||||||||||||||||||||
| AJ | – | Reverse Recovery Time:
|
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| + | – | Old version diode. |
Dimensions of Fast Recovery Diode R9G2-12-14AJ + and Replacement ADD-R9G2-12-14AJ +:
Package R9G
High Power Semiconductors AS ENERGITM
Our company is engaged in the manufacturer and sale of wide range of power semiconductors (power thyristors, modules, rectifier diodes, avalanche, rotor and welding diodes, triacs etc.) currents up to 15000A and voltages to 9000V, and air and water heatsinks to them.
You can buy semiconductor devices in any volumes, and when ordering large lots, the price will be lower. We have earned the trust of customers and supply products all over the world.
For questions regarding the acquisition of Power Thyristors, Diodes, Modules send an email request to:
And we will provide you a commercial offer for delivery.
For a large number, we will provide an individual price!!!
We are open to manufacture products at our production facilities
according to your requests and technical task.
Photo Gallery
The photo gallery shows many different semiconductor devices, semiconductor chips and SCRs produced by AS ENERGITM, examples of test reports.
Heat sinks for power stud diodes:
Heat sinks (radiators) are used for cooling of power semiconductor devices in stud design.
Heat sinks of coolers are made of aluminum radiator profiles and do not require additional protective coating when used in various climatic conditions.
See for more information about heatsinks: "Air-cooled heatsinks for stud devices".
Installation recommendations for stud type power rectifier diodes:
The reliability of heat transfer and electrical contact between the mating surfaces of the diode and the cooler over the entire temperature range is ensured by appropriate torque.
Before assembly you should perform visual inspection (1) contact surfaces for mechanical damages and wipe (2), soaked with alcohol (toluene, gasoline, acetone).
To improve the parameters of heat transfer it is recommended to lubricate (3) a thin layer of silicone thermal conductive paste before the assembly, which is not a mandatory condition for installation.
After installation, the fasteners (nuts and washers) must be additionally secured against corrosion.
Why choose AS ENERGITM
- Own production facilities, including semiconductor silicon chips production
- European brand - 100% quality, favorable price, short production terms
- Over 20 years of experience in the semiconductor industry
- Clients from more than 50 countries trust us
- 20000 items in the product line for currents from 10A to 15000A, voltages from 100V to 9000V
- We produce analogues of other manufacturers' products
- Guaranteed certified quality, warranty period of operation - 2 years
Quality Warranty
Our products are certified and correspond to international standards.
Our company provides a quality guarantee for products of 2 years.
We provide certificates of conformity, reliability reports, data sheets and technical passports at the request of the customer.
Each product is tested for the main parameters, and Test reports of the parameters for each product are provided.
Geography of partnership
AS ENERGITM company manufactures and supplies power semiconductors to more than 50 countries around the world.
Logistics and Delivery
We deliver our products all over the world with the services of logistics companies: DHL, TNT, UPS, EMS, Fedex, Aramex.
Products can be delivered by any means of transport: air, sea, rail and road.
AS ENERGITM Semiconductors Manufacturing
Our products range includes rectifier diodes, phase control thyristors in disc and stud design, avalanche diodes and thyristors, fast switching, high frequency thyristors, fast recovery, welding and rotor diodes, triacs, bridge rectifiers, power modules (thyristor, diode, thyristor-diode, IGBT), and air and water heatsinks to them.
Power diodes and thyristors are produced for currents from 10A to 15000A, voltage range from 100V to 9000V.
Power diode and thyristor modules are produced from 25A and up to 1250A, voltage range 400V - 4400V.
The range of power semiconductors also includes equivalent, replacement, analogue and alternative semiconductor devices of global manufacturers.
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