Distributed Gate Thyristor TG 979-1600-45 (610А 4500V) ČKD Polovodiče Replacement

ČKD Polovodiče Part Number	TG979-1600-45
Average on-state current, I_T(AV)M	610A
Voltage, V_DRM	4500V
Package Dimensions	P63G 100x63x26
Datasheet
Replacement AS ENERGI^TM	ATG 979-1600-45
Add to Cart	on request + –

Distributed Gate Thyristor ATG 979-1600-45 AS ENERGI^TM is a replacement, analogue, alternative and equivalent semiconductor device for Distributed Gate Thyristor TG 979-1600-45 ČKD Polovodiče (CKD Semiconductors).

Average on-state current I_TAV – 610A, repetitive peak forward voltage V_DRM – 4500V.

Features: The distributed gate design and lifetime control features give these devices both high di/dt capability and fast, low recovery turn-off, while maintaining a low on-state voltage drop.

Distributed Gate Thyristors are available with blocking voltages to 4.5kV and average currents in excess of 5.3kA, with t_q ratings from 10µs.

Distributed Gate Thyristors are suitable for induction power supplies, high frequency inverters / converters, UPS and pulse power.

"Air-cooled heatsinks O series for disc devices", "Air heatsink SF series", "Water heatsink SS series" for thyristor cooling are also available to order.

Thyristors AS ENERGI^TM have the following features: low static and dynamic losses, high values of V_DRM/V_RRM, extensive experience of using the devices in various industries, range of voltages from 100 to 9000 V and amperages from 10 to 15000 A, high resistance to thermal and electric cycling, natural or forced air cooling.

The technical specifications and parameters of TG 979-1600-45 and replacement ATG 979-1600-45, datasheet PDF, outline drawing and dimensions are listed below.

Our company provides a quality guarantee for thyristors of 2 years from the date of purchase. When supplying thyristors, if necessary, we provide technical passport and certificate of conformity.

The final price for distributed gate thyristors depends on the voltage class, quantity, delivery terms, manufacturer, country of origin and form of payment.

General specifications of Distributed Gate Thyristor ČKD Polovodiče and Replacement:

Thyristor specifications		TG979-1600-45
Average on-state current (Case temperature)	I_T(AV)M	610 A
Repetitive peak off-state voltage	V_DRM	4500 V
Repetitive peak reverse voltage	V_RRM	4500 V
Surge on-state current	I_TSM	12 kA
Peak Turn-off current	I_TGQM	1400 A
Critical rate of rise of off-state voltage	dv/dt	1000 V/µs
Critical rate of rise of on-state current	di/dt	400 A/µs
Threshold voltage	V_T0	2.30 V
On-state slope resistance	r_T	1.30 mΩ
Maximum peak on-state voltage	V_TM	4.55 V
Maximum peak on-state current	I_TM	1600 A
Gate trigger voltage	V_GT	1.5 V
Gate trigger current	I_GT	1.6 A
Temperature of p-n junction	T_{vj max}	115 ºC
Thermal resistance, junction to case	R_th(j-c)	18 K/W
Mounting force	F_m	15 ± 3 kN
Weight	W	0.82 kg
Package (Housing)	type	P63G
Dimensions	ØDxØdxH	100x63x26 mm
Replacement AS ENERGI^TM	type	ATG 979-1600-45
Datasheet	PDF

Part Numbering Guide for Distributed Gate Thyristor ATG 979-1600-45:

979

–

1600

–

A	–	AS ENERGI^TM
TG	–	Product group: Distributed Gate Thyristor.
979	–	Series of thyristors.
1600	–	Average on-state current I_T(AV), Amp.
45	–	Off-state voltage code V_DRM / 100.

Dimensions of Distributed Gate Thyristor TG 979-1600-45 and Replacement ATG 979-1600-45:

Package P63G

High Power Semiconductors AS ENERGI^TM

Our company is engaged in the manufacturer and sale of wide range of power semiconductors (power thyristors, modules, rectifier diodes, avalanche, rotor and welding diodes, triacs etc.) currents up to 15000A and voltages to 9000V, and air and water heatsinks to them.
You can buy semiconductor devices in any volumes, and when ordering large lots, the price will be lower. We have earned the trust of customers and supply products all over the world.

For questions regarding the acquisition of Power Thyristors, Diodes, Modules send an email request to:

[email protected]

And we will provide you a commercial offer for delivery.
For a large number, we will provide an individual price!!!

We are open to manufacture products at our production facilities
according to your requests and technical task.

Photo Gallery

The photo gallery shows many different semiconductor devices, semiconductor chips and SCRs produced by AS ENERGI^TM, examples of test reports.

See more Photos

Heat sinks for power disc thyristors:

Heat sinks (radiators) are used for single- and double-sided cooling of power semiconductor devices in disc design.

Heat sinks of coolers are made of aluminum radiator profiles and do not require additional protective coating when used in various climatic conditions.

Air and water heat sinks for thyristor cooling are also available to order.

See for more information about heatsinks: "Air-cooled heatsinks O series for disc devices", "Air heatsink SF series", "Water heatsink SS series".

Photo of Phase Control Thyristor SCR:

Why choose AS ENERGI^TM

Own production facilities, including semiconductor silicon chips production
European brand - 100% quality, favorable price, short production terms
Over 20 years of experience in the semiconductor industry
Clients from more than 50 countries trust us
20000 items in the product line for currents from 10A to 15000A, voltages from 100V to 9000V
We produce analogues of other manufacturers' products
Guaranteed certified quality, warranty period of operation - 2 years

Quality Warranty

Our products are certified and correspond to international standards.
Our company provides a quality guarantee for products of 2 years.
We provide certificates of conformity, reliability reports, data sheets and technical passports at the request of the customer.

Each product is tested for the main parameters, and Test reports of the parameters for each product are provided.

Geography of partnership

AS ENERGI^TM company manufactures and supplies power semiconductors to more than 50 countries around the world.

Logistics and Delivery

We deliver our products all over the world with the services of logistics companies: DHL, TNT, UPS, EMS, Fedex, Aramex.
Products can be delivered by any means of transport: air, sea, rail and road.

AS ENERGI^TM Semiconductors Manufacturing

Our products range includes rectifier diodes, phase control thyristors in disc and stud design, avalanche diodes and thyristors, fast switching, high frequency thyristors, fast recovery, welding and rotor diodes, triacs, bridge rectifiers, power modules (thyristor, diode, thyristor-diode, IGBT), and air and water heatsinks to them.

Power diodes and thyristors are produced for currents from 10A to 15000A, voltage range from 100V to 9000V.
Power diode and thyristor modules are produced from 25A and up to 1250A, voltage range 400V - 4400V.
The range of power semiconductors also includes equivalent, replacement, analogue and alternative semiconductor devices of global manufacturers.

Featured Products:

Tags: distributed gate thyristor TG 979-1600-45 Polovodiče replacement, ATG 979-1600-45 equivalent, TG 979-1600-45 replacement equivalent, TG979-1600-45 technical datasheet pdf, catalogue, specifications, TG 979-1600-45 replacement thyristor SCR 610 ampere 4500 V with a heatsink, TG 979-1600-45 Polovodiče Discrete Semiconductor, factory manufacturer of power scr thyristor, ceramic housing press pack thyristor, thyristor price list, order, silicon controlled rectifier