Welding Diode ZP18000A-02, ZP18000A-04, ZP18000A-06

Average forward current, IF(AV)M 18000 A
Voltage, VRRM 200-600 V
IFSM 120 kA
ZP18000-(02...06) on request
Package D20
Dimensions ØDxØdxH 75x68x5 mm
Weight 200 g

Welding Diode ZP18000-(02...06) AS ENERGITM are available with forward current IFAV of 18000A and reverse blocking voltages VRRM of 200V, 400V, 600V.

Welding Diodes ratings (series): ZP18000A-02 200V, ZP18000A-04 400V, ZP18000A-06 600V.

Features of Welding Diodes: ability to conduct high mean forward current, allowing to reduce the amount of parallel devices; high resistance to electric and thermal cycling ensures a long service life; minimal static losses; high maximal junction temperature (Tjmax) allows these diodes to conduct higher current with the same cooling system; possibility of double-sided cooling; optimized for high current rectifiers; very low thermal resistance; designed for medium and high frequency welding equipment. Air and water heat sinks for diode cooling are also available to order.

Rectifier Diodes AS ENERGITM have the following features: industry standard housing; low static and dynamic losses, high values of VRRM/VRSM, extensive experience of using the devices in various industries, range of voltages from 100 to 9000 V and amperages from 100 to 18000 A, high resistance to thermal and electric cycling.

Specifications and parameters, datasheet PDF, dimensions, drawings are listed below.

Our company provides a quality guarantee for welding diodes of 2 years from the date of purchase. When supplying diodes, if necessary, we provide technical passport and certificate of conformity.

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The final price for welding diodes depends on the voltage class, quantity, delivery terms, manufacturer, country of origin and form of payment.

General specifications of Welding Diode ZP18000-(02...06):

Diode specifications ZP18000-(02...06)
Maximum allowable average forward current (Case temperature) IF(AV)M (TC) 18000 (85ºC)
Max. repetitive peak reverse blocking voltage VRRM 200-600 V
Surge peak forward current IFSM 120 kA
Safety factor I2t 72 kA2·s
Threshold voltage VT(TO) 0.80 V
Forward slope resistance rT 0.02 mΩ
Temperature of p-n junction Tvj max 190 ºC
Thermal resistance, junction to case Rth(j-c) 0.0035 K/W
Thermal resistance, case to heatsink Rth(c-h) 0.0020 K/W
Clamping force Fm ±10% 70-80 kN
Weight W 200 g
Package - D20
Dimensions ØDxØdxH 75x68x5 mm

Part Numbering Guide for Welding Diodes:

ZP 18000 - 06
ZP Series of Welding Diode brand AS ENERGITM
18000 Average on-state current IF(AV), Amp.
06 Voltage class VRRM / 100.

Polarity (anode, cathode) of power rectifier disc diodes:

Diode polarity Disc diodes

High Power Semiconductors AS ENERGITM

Our company is engaged in the manufacturer and sale of wide range of power semiconductors (power thyristors, modules, rectifier diodes, avalanche, rotor and welding diodes, triacs etc.) currents up to 15000A and voltages to 9000V, and air and water heatsinks to them.
You can buy semiconductor devices in any volumes, and when ordering large lots, the price will be lower. We have earned the trust of customers and supply products all over the world.

For questions regarding the acquisition of Power Thyristors, Diodes, Modules send an email request to:

[email protected]

And we will provide you a commercial offer for delivery.
For a large number, we will provide an individual price!!!

We are open to manufacture products at our production facilities
according to your requests and technical task.

Photo Gallery

The photo gallery shows many different semiconductor devices, semiconductor chips and SCRs produced by AS ENERGITM, examples of test reports.

Heat sinks for power rectifier disc diodes:

Heat sinks (radiators) are used for single- and double-sided cooling of power semiconductor devices in disc design.

Heat sinks of coolers are made of aluminum radiator profiles and do not require additional protective coating when used in various climatic conditions.

Air and water heat sinks for rectifier diode cooling are also available to order.

See for more information about heatsinks: "Air-cooled heatsinks O series for disc devices", "Air heatsink SF series", "Water heatsink SS series".

Photo of Welding Diodes:

icon Why choose AS ENERGITM

  • Own production facilities, including semiconductor silicon chips production
  • European brand - 100% quality, favorable price, short production terms
  • Over 20 years of experience in the semiconductor industry
  • Clients from more than 50 countries trust us
  • 20000 items in the product line for currents from 10A to 15000A, voltages from 100V to 9000V
  • We produce analogues of other manufacturers' products
  • Guaranteed certified quality, warranty period of operation - 2 years


Quality Warranty

Our products are certified and correspond to international standards.
Our company provides a quality guarantee for products of 2 years.
We provide certificates of conformity, reliability reports, data sheets and technical passports at the request of the customer.


Each product is tested for the main parameters, and Test reports of the parameters for each product are provided.

Test Report

Geography of partnership

AS ENERGITM company manufactures and supplies power semiconductors to more than 50 countries around the world.


Logistics and Delivery

We deliver our products all over the world with the services of logistics companies: DHL, TNT, UPS, EMS, Fedex, Aramex.
Products can be delivered by any means of transport: air, sea, rail and road.


AS ENERGITM Semiconductors Manufacturing

Our products range includes rectifier diodes, phase control thyristors in disc and stud design, avalanche diodes and thyristors, fast switching, high frequency thyristors, fast recovery, welding and rotor diodes, triacs, bridge rectifiers, power modules (thyristor, diode, thyristor-diode, IGBT), and air and water heatsinks to them.

Power diodes and thyristors are produced for currents from 10A to 15000A, voltage range from 100V to 9000V.
Power diode and thyristor modules are produced from 25A and up to 1250A, voltage range 400V - 4400V.
The range of power semiconductors also includes equivalent, replacement, analogue and alternative semiconductor devices of global manufacturers.

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