Fast Recovery Diode VS-SD823C25S20C Vishay Replacement

Vishay Part Number VS-SD823C25S20C
Average forward current, IF(AV)M (TC) 810A (55ºC)
Voltage, VRRM 2500 V
Dimensions ØDxØdxH 42x25x14.5 mm
Datasheet
Replacement AS ENERGITM ASDD823C25S20C
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Fast Recovery Diode ASDD823C25S20C AS ENERGITM also known as a Fast Diode or Fast Switching Diode, in disc design is a replacement, analogue, alternative and equivalent semiconductor device for fast recovery diode VS-SD823C25S20C Vishay Semiconductors.

Average forward current IFAV810 ampere, repetitive peak reverse voltage VRRM2500V. "Air-cooled heatsinks O series for disc devices", "Air heatsink SF series", "Water heatsink SS series" for diode cooling are also available to order.

The peculiarity of diodes is their fast recovery (short reverse recovery time trr and small recovery charge) and application at high frequencies. Diodes have a high current-carrying capacity at high frequencies.

Features of Fast Recovery Diodes: optimised for line frequency; low reverse recovery time; high switching speed; low on-state losses; high reverse voltage and high current handling capabilities; press pack standard ceramic housing; designed for high power industrial and power transmission applications. Their main applications are rectifiers for DC-DC converters and inverters, high-frequency rectifiers, switching power supplies.

Fast Recovery Diodes AS ENERGITM have the following features: industry standard housing; low static and dynamic losses, high values of VRRM/VRSM, extensive experience of using the devices in various industries, range of voltages from 100 to 9000 V and amperages from 10 to 15000 A, high resistance to thermal and electric cycling.

The technical specifications and parameters of VS-SD823C25S20C and replacement ASDD823C25S20C, datasheet PDF, outline drawing and dimensions are listed below.

Our company provides a quality guarantee for diodes of 2 years from the date of purchase. When supplying diodes, if necessary, we provide technical passport and certificate of conformity.

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The final price for fast recovery diodes in disc design depends on the voltage class, quantity, delivery terms, manufacturer, country of origin and form of payment.

General specifications of Fast Recovery Diode Vishay and Replacement:

Diode specifications VS-SD823C25S20C
Maximum allowable average forward current (Case temperature) IF(AV)M (TC) 810 A (55ºC)
Max. repetitive peak reverse blocking voltage VRRM 2500 V
Surge peak forward current IFSM 9300 A
Reverse recovery time trr 2.0 μs
Safety factor I2t 432 kA2·s
Threshold voltage VF(T0) 1.11 V
Forward slope resistance rT 0.76 mΩ
Temperature of p-n junction Tvj max 150 ºC
Thermal resistance, junction to case Rth(j-c) 0.007 K/kW
Clamping force Fm 9.8 kN
Weight W 83 g
Package (Housing) type B-43
Dimensions ØDxØdxH 42x25x14.5 mm
Replacement AS ENERGITM type ASDD823C25S20C
Datasheet PDF

Part Numbering Guide for Fast Recovery Diodes:

AS DD 82 3 C 25 S20 C
AS brand AS ENERGITM
DD Product group: Fast Recovery Diode Disc.
82 Essential part number.
3 Fast recovery.
C Ceramic PUK.
25 Voltage class VRRM x 100.
S20 trr code.
C PUK case B-43.

Polarity (anode, cathode) of power rectifier disc diodes:

Diode polarity Disc diodes

High Power Semiconductors AS ENERGITM

Our company is engaged in the manufacturer and sale of wide range of power semiconductors (power thyristors, modules, rectifier diodes, avalanche, rotor and welding diodes, triacs etc.) currents up to 15000A and voltages to 9000V, and air and water heatsinks to them.
You can buy semiconductor devices in any volumes, and when ordering large lots, the price will be lower. We have earned the trust of customers and supply products all over the world.

For questions regarding the acquisition of Power Thyristors, Diodes, Modules send an email request to:

[email protected]

And we will provide you a commercial offer for delivery.
For a large number, we will provide an individual price!!!

We are open to manufacture products at our production facilities
according to your requests and technical task.


Photo Gallery

The photo gallery shows many different semiconductor devices, semiconductor chips and SCRs produced by AS ENERGITM, examples of test reports.


Heat sinks for power rectifier disc diodes:

Heat sinks (radiators) are used for single- and double-sided cooling of power semiconductor devices in disc design.

Heat sinks of coolers are made of aluminum radiator profiles and do not require additional protective coating when used in various climatic conditions.

Air and water heat sinks for rectifier diode cooling are also available to order.

See for more information about heatsinks: "Air-cooled heatsinks O series for disc devices", "Air heatsink SF series", "Water heatsink SS series".


Photo of Rectifier Diodes:


icon Why choose AS ENERGITM

  • Own production facilities, including semiconductor silicon chips production
  • European brand - 100% quality, favorable price, short production terms
  • Over 20 years of experience in the semiconductor industry
  • Clients from more than 50 countries trust us
  • 20000 items in the product line for currents from 10A to 15000A, voltages from 100V to 9000V
  • We produce analogues of other manufacturers' products
  • Guaranteed certified quality, warranty period of operation - 2 years

 

Quality Warranty

Our products are certified and correspond to international standards.
Our company provides a quality guarantee for products of 2 years.
We provide certificates of conformity, reliability reports, data sheets and technical passports at the request of the customer.

Certificates

Each product is tested for the main parameters, and Test reports of the parameters for each product are provided.

Test Report

Geography of partnership

AS ENERGITM company manufactures and supplies power semiconductors to more than 50 countries around the world.

Geography

Logistics and Delivery

We deliver our products all over the world with the services of logistics companies: DHL, TNT, UPS, EMS, Fedex, Aramex.
Products can be delivered by any means of transport: air, sea, rail and road.

Logistics

AS ENERGITM Semiconductors Manufacturing

Our products range includes rectifier diodes, phase control thyristors in disc and stud design, avalanche diodes and thyristors, fast switching, high frequency thyristors, fast recovery, welding and rotor diodes, triacs, bridge rectifiers, power modules (thyristor, diode, thyristor-diode, IGBT), and air and water heatsinks to them.

Power diodes and thyristors are produced for currents from 10A to 15000A, voltage range from 100V to 9000V.
Power diode and thyristor modules are produced from 25A and up to 1250A, voltage range 400V - 4400V.
The range of power semiconductors also includes equivalent, replacement, analogue and alternative semiconductor devices of global manufacturers.


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