Soft Recovery Diode M1022LC200 IXYS Westcode Replacement

IXYS Westcode Part Number M1022LC200
Average forward current, IF(AV)M (TC) 1022A (55ºC)
Voltage, VRRM 2000 V
Package, Dimensions ØDxØdxH Package W4
58x34x27 mm
Datasheet
Replacement AS ENERGITM ADDM1022LC200
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Soft Recovery Diode ADDM1022LC200 AS ENERGITM is a replacement, analogue, alternative and equivalent semiconductor device for soft recovery discrete diode M1022LC200 IXYS UK Westcode, Littelfuse.

Average forward current IFAV1022 ampere, repetitive peak reverse voltage VRRM2000V.

Soft Recovery Diodes are available with a range of reverse recovery characteristics tailored to meet the requirements of both freewheeling and snubber applications. These semiconductor devices are particularly suitable where soft recovery is required, such as RCD snubbers, voltage clamping and snubberless applications.

Features: class-leading performance and reliability; optimised for line frequency; low on-state losses; high reverse voltage and high current handling capabilities, high surge capability.

"Air-cooled heatsinks O series for disc devices", "Air heatsink SF series", "Water heatsink SS series" for thyristors and diodes cooling are also available to order.

Rectifier Diodes AS ENERGITM have the following features: industry standard housing; low static and dynamic losses, high values of VRRM/VRSM, extensive experience of using the devices in various industries, range of voltages from 100 to 9000 V and amperages from 10 to 15000 A, high resistance to thermal and electric cycling.

The technical specifications and parameters of M1022LC200 and replacement ADDM1022LC200, datasheet PDF, outline drawing and dimensions are listed below.

Our company provides a quality guarantee for soft recovery diodes of 2 years from the date of purchase. When supplying diodes, if necessary, we provide technical passport and certificate of conformity.

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The final price for soft recovery diodes depends on the voltage class, quantity, delivery terms, manufacturer, country of origin and form of payment.

General specifications of Soft Recovery Diode IXYS WESTCODE and Replacements:

Diode specifications M1022LC200
Maximum allowable average forward current (Case temperature) IF(AV)M (TC) 1022 A (55ºC)
Max. repetitive peak reverse blocking voltage VRRM 2000 V
Surge peak forward current IFSM 14000 A
Safety factor I2t 980x103 A2·s
Reverse recovery time trr 3.00 µs
Recovered charge Qrr 375 µC
Forward current IFM 1000 A
Critical rate of rise of forward current -diF/dt 60 A/µs
Threshold voltage VT0 1.240 V
Slope resistance rT 0.330 mΩ
Temperature of p-n junction Tvj max 125 ºC
Thermal resistance, junction to case Rth(j-c) 0.0330 K/W
Clamping force Fm 10 - 20 kN
Weight W 0.34 kg
Package (Housing) type W4
Dimensions ØDxØdxH 58x34x27 mm
Replacement AS ENERGITM type ADDM1022LC200
Datasheet PDF

Part Numbering Guide for Soft Recovery Diodes Diodes:

A DDM 1022 LC 20 0
A brand AS ENERGITM
DDM Product group: Diode Disc type, Soft Recovery Diode.
1022 Average forward current IF(AV), Amp.
LC Housing (package) type.
20 Voltage class VRRM / 100.
0 Fixed code.

Dimensions of Soft Recovery Diode M1022LC200 and Replacement ADDM1022LC200:

dimensions

Package W4


Polarity (anode, cathode) of power rectifier disc diodes:

Diode polarity Disc diodes

High Power Semiconductors AS ENERGITM

Our company is engaged in the manufacturer and sale of wide range of power semiconductors (power thyristors, modules, rectifier diodes, avalanche, rotor and welding diodes, triacs etc.) currents up to 15000A and voltages to 9000V, and air and water heatsinks to them.
You can buy semiconductor devices in any volumes, and when ordering large lots, the price will be lower. We have earned the trust of customers and supply products all over the world.

For questions regarding the acquisition of Power Thyristors, Diodes, Modules send an email request to:

[email protected]

And we will provide you a commercial offer for delivery.
For a large number, we will provide an individual price!!!

We are open to manufacture products at our production facilities
according to your requests and technical task.


Heat sinks for power rectifier disc diodes:

Heat sinks (radiators) are used for single- and double-sided cooling of power semiconductor devices in disc design.

Heat sinks of coolers are made of aluminum radiator profiles and do not require additional protective coating when used in various climatic conditions.

Air and water heat sinks for rectifier diode cooling are also available to order.

See for more information about heatsinks: "Air-cooled heatsinks O series for disc devices", "Air heatsink SF series", "Water heatsink SS series".


Photo of Rectifier Diodes:


icon Why choose AS ENERGITM

  • Own production facilities, including semiconductor silicon chips production
  • European brand - 100% quality, favorable price, short production terms
  • Over 20 years of experience in the semiconductor industry
  • Clients from more than 50 countries trust us
  • 20000 items in the product line for currents from 10A to 15000A, voltages from 100V to 9000V
  • We produce analogues of other manufacturers' products
  • Guaranteed certified quality, warranty period of operation - 2 years

 

Quality Warranty

Our products are certified and correspond to international standards.
Our company provides a quality guarantee for products of 2 years.
We provide certificates of conformity, reliability reports, data sheets and technical passports at the request of the customer.

Certificates

Each product is tested for the main parameters, and Test reports of the parameters for each product are provided.

Test Report

Geography of partnership

AS ENERGITM company manufactures and supplies power semiconductors to more than 50 countries around the world.

Geography

Logistics and Delivery

We deliver our products all over the world with the services of logistics companies: DHL, TNT, UPS, EMS, Fedex, Aramex.
Products can be delivered by any means of transport: air, sea, rail and road.

Logistics

AS ENERGITM Semiconductors Manufacturing

Our products range includes rectifier diodes, phase control thyristors in disc and stud design, avalanche diodes and thyristors, fast switching, high frequency thyristors, fast recovery, welding and rotor diodes, triacs, bridge rectifiers, power modules (thyristor, diode, thyristor-diode, IGBT), and air and water heatsinks to them.

Power diodes and thyristors are produced for currents from 10A to 15000A, voltage range from 100V to 9000V.
Power diode and thyristor modules are produced from 25A and up to 1250A, voltage range 400V - 4400V.
The range of power semiconductors also includes equivalent, replacement, analogue and alternative semiconductor devices of global manufacturers.


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