Standard Rectifier Diode D2601N85T Infineon Replacement

Infineon Part Number D2601N85T
Average forward current, IF(AV)M (TC) 2200А (100ºC)
Voltage, VRRM 8500 V
Dimensions ØDxØdxH 121x86x26 mm
Datasheet
Replacement AS ENERGITM ADD2601N85T
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Rectifier Diode ADD2601N85T AS ENERGITM is a replacement, analogue, alternative and equivalent semiconductor device for normal recovery diode D2601N85T Infineon Technologies, Eupec. Average forward current IFAV2600 ampere, repetitive peak reverse voltage VRRM8500V.

Features of Standard Rectifier Diodes: optimised for line frequency; low on-state losses; high reverse voltage and high current handling capabilities; press pack standard ceramic housing; designed for high power industrial and power transmission applications. Their main applications are rectifiers for large AC drives, aluminum smelting and other metal refining as well as trackside supply. Air and water heat sinks for diode cooling are also available to order.

Rectifier Diodes AS ENERGITM have the following features: industry standard housing; low static and dynamic losses, high values of VRRM/VRSM, extensive experience of using the devices in various industries, range of voltages from 100 to 9000 V and amperages from 100 to 7500 A, high resistance to thermal and electric cycling.

Specifications and parameters, datasheet PDF, dimensions, drawings are listed below.

Our company provides a quality guarantee for rectifier diodes of 2 years from the date of purchase. When supplying diodes, if necessary, we provide technical passport and certificate of conformity.

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The final price for rectifier diodes depends on the voltage class, quantity, delivery terms, manufacturer, country of origin and form of payment.

General specifications of Standard Rectifier Diode Infineon and Replacement:

Diode specifications D2601N85T
Maximum allowable average forward current (Case temperature) IF(AV)M (TC) 2200 A (100ºC)
Max. repetitive peak reverse blocking voltage VRRM 8500 V
Surge peak forward current IFSM 50000 A
Safety factor I2t 12500 kA2·s
Threshold voltage VT0 0.94 V
Forward slope resistance rT 0.41 mΩ
Temperature of p-n junction Tvj max 160 ºC
Thermal resistance, junction to case Rth(j-c) 8.55 K/kW
Clamping force Fm 36-52 kN
Weight W 1.2 kg
Package (Housing) type D120.26K
Dimensions ØDxØdxH 121x86x26 mm
Replacement AS ENERGITM type ADD2601N85T
Datasheet PDF

Part Numbering Guide for Standard Rectifier Diodes:

A DD 2601 N 85 T
A brand AS ENERGITM
DD Product group: Rectifier Diode.
2601 Average forward current IF(AV), Amp.
N Normal recovery diode.
85 Voltage class VRRM / 100.
T Housing (package) type: disc housing.

Polarity (anode, cathode) of power rectifier disc diodes:

Diode polarity Disc diodes

High Power Semiconductors AS ENERGITM

Our company is engaged in the manufacturer and sale of wide range of power semiconductors (power thyristors, modules, rectifier diodes, avalanche, rotor and welding diodes, triacs etc.) currents up to 15000A and voltages to 9000V, and air and water heatsinks to them.
You can buy semiconductor devices in any volumes, and when ordering large lots, the price will be lower. We have earned the trust of customers and supply products all over the world.

For questions regarding the acquisition of Power Thyristors, Diodes, Modules send an email request to:

[email protected]

And we will provide you a commercial offer for delivery.
For a large number, we will provide an individual price!!!

We are open to manufacture products at our production facilities
according to your requests and technical task.


Photo Gallery

The photo gallery shows many different semiconductor devices, semiconductor chips and SCRs produced by AS ENERGITM, examples of test reports.


Heat sinks for power rectifier disc diodes:

Heat sinks (radiators) are used for single- and double-sided cooling of power semiconductor devices in disc design.

Heat sinks of coolers are made of aluminum radiator profiles and do not require additional protective coating when used in various climatic conditions.

Air and water heat sinks for rectifier diode cooling are also available to order.

See for more information about heatsinks: "Air-cooled heatsinks O series for disc devices", "Air heatsink SF series", "Water heatsink SS series".


Photo of Rectifier Diodes:


icon Why choose AS ENERGITM

  • Own production facilities, including semiconductor silicon chips production
  • European brand - 100% quality, favorable price, short production terms
  • Over 20 years of experience in the semiconductor industry
  • Clients from more than 50 countries trust us
  • 20000 items in the product line for currents from 10A to 15000A, voltages from 100V to 9000V
  • We produce analogues of other manufacturers' products
  • Guaranteed certified quality, warranty period of operation - 2 years

 

Quality Warranty

Our products are certified and correspond to international standards.
Our company provides a quality guarantee for products of 2 years.
We provide certificates of conformity, reliability reports, data sheets and technical passports at the request of the customer.

Certificates

Each product is tested for the main parameters, and Test reports of the parameters for each product are provided.

Test Report

Geography of partnership

AS ENERGITM company manufactures and supplies power semiconductors to more than 50 countries around the world.

Geography

Logistics and Delivery

We deliver our products all over the world with the services of logistics companies: DHL, TNT, UPS, EMS, Fedex, Aramex.
Products can be delivered by any means of transport: air, sea, rail and road.

Logistics

AS ENERGITM Semiconductors Manufacturing

Our products range includes rectifier diodes, phase control thyristors in disc and stud design, avalanche diodes and thyristors, fast switching, high frequency thyristors, fast recovery, welding and rotor diodes, triacs, bridge rectifiers, power modules (thyristor, diode, thyristor-diode, IGBT), and air and water heatsinks to them.

Power diodes and thyristors are produced for currents from 10A to 15000A, voltage range from 100V to 9000V.
Power diode and thyristor modules are produced from 25A and up to 1250A, voltage range 400V - 4400V.
The range of power semiconductors also includes equivalent, replacement, analogue and alternative semiconductor devices of global manufacturers.


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