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Pavlo GorkunDiode module MD3-470-44-A2
| Average forward current, ITAV/IFAV | 470A |
| Voltage, VRRM/VDRM | 3800 – 4400V |
| Voltage code, VRRM / 100 | 38 – 44 |
| MD3-470-44-A2 | on request
|
| Weight | 1.5 kg |
| Package, Dimensions LxBxH |
A2 124x60x52 |
| Datasheet |  |
Power rectifier diode module MD3-470-44-A2 AS ENERGITM in an international standard package, 470A 4400V.
Used to convert DC and AC currents up to 470 ampere, with a frequency of up to 500 Hz on circuits with voltages up to 4400 volt (44 class).
Diode modules MD3-470-44-A2 are in a standard package A2: base dimensions 60x124 mm, housing height – 52 mm, weight – 1.5 kg. Two-position module is a monolithic construction of two semiconductor diodes: type diode-diode. Module connection diagram MD3-470-44-A2 – half-bridge.
Series (ratings) of diode modules: MD3-470-38-A2 (470A 3800V), MD3-470-40-A2 (470A 4000V), MD3-470-42-A2 (470A 4200V), MD3-470-44-A2 (470A 4400V).
- Main terminals are at the top of the case and are numbered 1, 2, 3;
High thermal cyclic resistance and reliable operation of low-frequency diode modules MD3-470-44-A2 when switching high currents is achieved due to their design features and stable parameters of galvanic isolation.
The MD3-470-44-A2 diode modules have a clamp-on design that provides easy mounting and good contact with the cooler for heat dissipation. Several modules can be mounted on one cooler without additional insulation, which significantly reduces the overall dimensions of the assembly. Between the module and the heat sink (heat sink) it is recommended to use a thermally conductive substrate lubricated with thermal paste.
The two-position modules have different wiring diagrams (electrical circuit diagrams): MD3 – half-bridge; MD4 – common cathode circuit; MD5 – common anode circuit.
Our modules are offered in several dual and single device topologies for almost all phase control or rectifier applications.
Our company provides a quality guarantee for thyristor / diode modules of 2 years from the date of purchase. When supplying thyristor / diode modules, if necessary, we provide technical passport and certificate of conformity.
The final price for thyristor / diode modules depends on the class, quantity, delivery terms, manufacturer, country of origin and form of payment.
General specifications of diode-diode module MD3-470-44-A2:
| Diode module specifications | MD3-470-44-A2 | |
| Maximum allowable average forward current (Case temperature) | IF(AV) (TC) | 470 А (100ºC) |
| Repetitive pulsed reverse voltage; Repetitive pulsed closed state voltage | VRRM/VDRM | 4400 V |
| Surge on-state current | IFSM | 12.0 kA |
| Peak on-state voltage | VFM | 1.70 V |
| Peak on-state current | IFM | 1256 A |
| Threshold voltage | V(TO) | 0.85 V |
| On-state slope resistance | rT | 0.600 mΩ |
| Junction temperature | Tj max | 125 ºC |
| Maximum case operating temperature | Tc max | 125 ºC |
| Thermal resistance, junction to case | Rth(j-c) | 0.0680 ºC/W |
| Electrical insulation strength | VISOL | 3.00 kV |
| Design (switches) | - | dual component |
| Type (circuit diagram) | - | diode-diode |
| Connection diagram | - | half-bridge |
| Weight | W | 1.5 kg |
| Package | - | A2 |
| Dimensions, mm | L×B×H | 124x60x52 mm |
| Datasheet | |
|
Part numbering guide for diode–diode modules MD3-470-44-A2:
| MD | 3 | – | 470 | – | 44 | – | A2 | – | N |
| MD | – | Diode module,  AS ENERGITM |
| 3 | – | Connection diagram: 3 – half-bridge; 4 – common cathode circuit; 5 – common anode circuit. |
| 470 | – | Rated current IF(AV), A. |
| 44 | – | Voltage class VRRM / 100 (Nominal voltage – 4400 V). |
| A2 | – | Housing type. |
| N | – | Ambient conditions: N – Normal. |
Dimensions of power diode modules MD3-470-44-A2:
Package A2
Diode module connection diagram MD3-470-44-A2:
|
|
1, 2, 3 – main terminals. |
High Power Semiconductors AS ENERGITM
Our company is engaged in the manufacturer and sale of wide range of power semiconductors (power thyristors, modules, rectifier diodes, avalanche, rotor and welding diodes, triacs etc.) currents up to 15000A and voltages to 9000V, and air and water heatsinks to them.
You can buy semiconductor devices in any volumes, and when ordering large lots, the price will be lower. We have earned the trust of customers and supply products all over the world.
For questions regarding the acquisition of Power Thyristors, Diodes, Modules send an email request to:
And we will provide you a commercial offer for delivery.
For a large number, we will provide an individual price!!!
We are open to manufacture products at our production facilities
according to your requests and technical task.
Photo Gallery
The photo gallery shows many different semiconductor devices, semiconductor chips and SCRs produced by AS ENERGITM, examples of test reports.
Why choose AS ENERGITM
- Own production facilities, including semiconductor silicon chips production
- European brand - 100% quality, favorable price, short production terms
- Over 20 years of experience in the semiconductor industry
- Clients from more than 50 countries trust us
- 20000 items in the product line for currents from 10A to 15000A, voltages from 100V to 9000V
- We produce analogues of other manufacturers' products
- Guaranteed certified quality, warranty period of operation - 2 years
Quality Warranty
Our products are certified and correspond to international standards.
Our company provides a quality guarantee for products of 2 years.
We provide certificates of conformity, reliability reports, data sheets and technical passports at the request of the customer.
Each product is tested for the main parameters, and Test reports of the parameters for each product are provided.
Geography of partnership
AS ENERGITM company manufactures and supplies power semiconductors to more than 50 countries around the world.
Logistics and Delivery
We deliver our products all over the world with the services of logistics companies: DHL, TNT, UPS, EMS, Fedex, Aramex.
Products can be delivered by any means of transport: air, sea, rail and road.
AS ENERGITM Semiconductors Manufacturing
Our products range includes rectifier diodes, phase control thyristors in disc and stud design, avalanche diodes and thyristors, fast switching, high frequency thyristors, fast recovery, welding and rotor diodes, triacs, bridge rectifiers, power modules (thyristor, diode, thyristor-diode, IGBT), and air and water heatsinks to them.
Power diodes and thyristors are produced for currents from 10A to 15000A, voltage range from 100V to 9000V.
Power diode and thyristor modules are produced from 25A and up to 1250A, voltage range 400V - 4400V.
The range of power semiconductors also includes equivalent, replacement, analogue and alternative semiconductor devices of global manufacturers.
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