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Pavlo GorkunFast Switching Thyristor F71-225-16 Kubara Lamina Replacement
| Kubara Lamina Part Number | F71-225-16 |
| Average on-state current, IT(AV) (TC) | 225A (80ºC) |
| Voltage, VDRM/VRRM | 1600V |
| Turn-off time tq | 40 µs |
| Package Stud thread |
8 M20x1.5 |
| Datasheet |  |
| Replacement AS ENERGITM | A-TSF71-225-16 |
| Add to Cart | on request
|
Fast Switching Thyristor A-TSF71-225-16 AS ENERGITM is a replacement, analogue, alternative and equivalent semiconductor device for fast switching thyristor (fast turn-off thyristor) F71-225-16 Kubara Lamina.
Average on-state current ITAV – 225A, repetitive peak forward/reverse voltage VDRM/VRRM – 1600V, turn-off time tq – 40 µs.
Features: Fast Switching Thyristors ensure low switching losses and high di/dt performance. Fast switching thyristors are suitable for existing inverter, DC chopper drives, UPS and pulse power applications.
Fast Switching Thyristors (fast turn-off capsule type thyristors) are available from 400V up to 2200V, current from 63A up to 700A and turn-off time tq from 12.5μs up to 40μs.
"Air-cooled heatsinks O series for stud devices" for thyristor cooling are also available to order.
Thyristors AS ENERGITM have the following features: low static and dynamic losses, high values of VDRM/VRRM, extensive experience of using the devices in various industries, range of voltages from 100 to 9000 V and amperages from 10 to 15000 A, high resistance to thermal and electric cycling, natural or forced air cooling.
The technical specifications and parameters of F71-225-16 and replacement A-TSF71-225-16, datasheet PDF, outline drawing and dimensions are listed below.
Our company provides a quality guarantee for thyristors of 2 years from the date of purchase. When supplying thyristors, if necessary, we provide technical passport and certificate of conformity.
The final price for fast switching thyristors depends on the voltage class, quantity, delivery terms, manufacturer, country of origin and form of payment.
General specifications of Fast Switching Thyristor Kubara Lamina and Replacement:
| Thyristor specifications | F71-225-16 | |
| Average on-state current (Case temperature) | IT(AV) (TC) | 225 A (80ºC) |
| Repetitive peak off-state voltage; repetitive peak reverse voltage | VDRM/VRRM | 1600 V |
| Surge on-state current | ITSM | 6.1 kA |
| Safety factor | I2t | 186 kA2·s |
| Turn-off time | tq | 40 µs |
| Threshold voltage | VT0 | - |
| On-state slope resistance | rT | - |
| Peak on-state voltage | VTM | 2.25 V |
| Peak on-state current | ITM | 1500 A |
| Gate current to trigger | IGT | 200 mA |
| Gate voltage to trigger | VGT | 3 V |
| Rate of rise of on-state currentrepetitive | di/dt | 150 A/µs |
| Critical rate of raise of off-state voltage | dv/dt | 320 V/µs |
| Temperature of p-n junction | Tvj | -40...+125 ºC |
| Thermal resistance, junction to heatsink | RthJC | 0.1 °C/W |
| Thermal resistance, junction to heatsink | RthCR | 0.05 °C/W |
| Mounting torque | Md | 38.0-41.0 Nm |
| Weight | W | 500 g |
| Package (Housing) | type | 8 |
| Stud thread | Ød | M20x1.5 |
| Replacement AS ENERGITM | type | A-TSF71-225-16 |
| Datasheet | |
|
Part Numbering Guide for Fast Switching Thyristor A-TSF71-225-16:
| A | – | TSF | 7 | 1 | – | 225 | – | 16 |
| A | – |  AS ENERGITM |
| TSF | – | Product group: Fast Switching Thyristor. |
| 7 | – | Element size code. |
| 1 | – | Case type code: 1 – stud base, ceramic housing 2 – stud base, glass-metal housing 3,5 – ceramic, hockey puk case 4 – flat base, ceramic housing 6 – flat base, glass-metal housing |
| 225 | – | Average current in open state IT(AV), Amp. |
| 16 | – | Voltage class VRRM / 100. |
Dimensions of Fast Switching Thyristor F71-225-16 and Replacement A-TSF71-225-16:
Package 8
High Power Semiconductors AS ENERGITM
Our company is engaged in the manufacturer and sale of wide range of power semiconductors (power thyristors, modules, rectifier diodes, avalanche, rotor and welding diodes, triacs etc.) currents up to 15000A and voltages to 9000V, and air and water heatsinks to them.
You can buy semiconductor devices in any volumes, and when ordering large lots, the price will be lower. We have earned the trust of customers and supply products all over the world.
For questions regarding the acquisition of Power Thyristors, Diodes, Modules send an email request to:
And we will provide you a commercial offer for delivery.
For a large number, we will provide an individual price!!!
We are open to manufacture products at our production facilities
according to your requests and technical task.
Photo Gallery
The photo gallery shows many different semiconductor devices, semiconductor chips and SCRs produced by AS ENERGITM, examples of test reports.
Installation recommendations for power stud mount thyristors:
The reliability of heat transfer and electrical contact between the mating surfaces of the thyristor and the cooler over the entire temperature range is ensured by appropriate torque.
Before assembly you should perform visual inspection (1) contact surfaces for mechanical damages and wipe (2), soaked with alcohol (toluene, gasoline, acetone).
To improve the parameters of heat transfer it is recommended to lubricate (3) a thin layer of silicone thermal conductive paste before the assembly, which is not a mandatory condition for installation.
After installation, the fasteners (nuts and washers) must be additionally secured against corrosion.
Tips and recommendations for power thyristors:
The power thyristors should not be operated for long periods of time at their limit load for all parameters. In this case, the safety factor is determined by the required degree of reliability of the device.
Replace a failed power thyristor with a thyristor that matches the parameters of the one being replaced.
Supercooling must be provided when operating in an environment with an elevated ambient temperature.
Periodic cleaning of power thyristors and coolers to remove dust and contaminants is recommended to ensure proper heat dissipation.
Inductive current dividers (often twisted toroidal wire) should be used to equalize currents between power thyristors connected in parallel. The most popular connection methods are closed circuit, common coil circuit, or power thyristor. The efficiency of current dividers in this case is determined by the cross section of the magnetic wire.
Prevention of voltage unbalance when power thyristors are connected in series is achieved by using shunt resistors connected in parallel with each thyristor. Voltage equalization in transient conditions is provided by connecting capacitors in parallel to each thyristor.
It is strictly forbidden to touch power thyristors under high voltage during operation.
Why choose AS ENERGITM
- Own production facilities, including semiconductor silicon chips production
- European brand - 100% quality, favorable price, short production terms
- Over 20 years of experience in the semiconductor industry
- Clients from more than 50 countries trust us
- 20000 items in the product line for currents from 10A to 15000A, voltages from 100V to 9000V
- We produce analogues of other manufacturers' products
- Guaranteed certified quality, warranty period of operation - 2 years
Quality Warranty
Our products are certified and correspond to international standards.
Our company provides a quality guarantee for products of 2 years.
We provide certificates of conformity, reliability reports, data sheets and technical passports at the request of the customer.
Each product is tested for the main parameters, and Test reports of the parameters for each product are provided.
Geography of partnership
AS ENERGITM company manufactures and supplies power semiconductors to more than 50 countries around the world.
Logistics and Delivery
We deliver our products all over the world with the services of logistics companies: DHL, TNT, UPS, EMS, Fedex, Aramex.
Products can be delivered by any means of transport: air, sea, rail and road.
AS ENERGITM Semiconductors Manufacturing
Our products range includes rectifier diodes, phase control thyristors in disc and stud design, avalanche diodes and thyristors, fast switching, high frequency thyristors, fast recovery, welding and rotor diodes, triacs, bridge rectifiers, power modules (thyristor, diode, thyristor-diode, IGBT), and air and water heatsinks to them.
Power diodes and thyristors are produced for currents from 10A to 15000A, voltage range from 100V to 9000V.
Power diode and thyristor modules are produced from 25A and up to 1250A, voltage range 400V - 4400V.
The range of power semiconductors also includes equivalent, replacement, analogue and alternative semiconductor devices of global manufacturers.
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